Doeshare-DN3134KT

Part #Doeshare-DN3134KT
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Doeshare-DN3134KT
DN3134KT  
DN3134KT  
N-Channel Enhancement Mode Field Effect Transistor  
General description  
N-Channel Enhancement Mode Field Effect Transistor  
Features:  
•
•
•
V

DS

: 20V  
I

D

: 0.75A  
R

DS(ON)

( at V

GS

=4.5V)
<
270 mohm  
•
R

DS(ON)

( at V

GS

=2.5V)
<
330 mohm  
Applications  
•
Drivers: Relays, Solenoid, Lamps, Hammers, Displays,  
Memories  
•
•
•
Battery Operated Systems  
Power Supply Converter Circuits  
Load/Power Switching Cell Phones, Pagers  
Device Marking Code:  
Device Type  
DN3134KT  
Device Marking  
34K or 34  
Absolute Maximum Ratings
(TA=25
℃
unless otherwise noted)  
Parameter  
Symbol  
V
DS  
Value  
Unit  
Drain-source Voltage  
20  
±
8  
V
Gate-source Voltage  
V
GS  
I
D  
V
Continuous Drain Current  
750  
1000  
150  
mA  
mA  
mW  
Pulsed Drain Current

A  

I
DM  
Power Dissipation with no heat sink @ T

A

=25
℃  
P

D  

Maximum Power Dissipation with infinite heat sink @ T

C

=25
℃  
275  
mW  
Thermal Resistance From Junction
T
o Ambient  
Operation Junction
T
emperature  
Storage
T
emperature  
R
thJA  
833  
150  
℃
/W  
℃
T

J  

T
STG  
-55
~
+150  
℃
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DN3134KT  
Electrical Characteristics
(
T

J

=25
℃
unless otherwise noted)  
Parameter  
Symbol  
Test conditions  
Min  
Typ  
Max  
Unit  
Static Characteristics  
Drain-source breakdown voltage  
Zero gate voltage drain current  
V
(BR)DSS  
I
DSS  
V

GS

= 0V, I

D

=250μA  
V

DS

=20V,V

GS

=0V  
20  
V
1
μA  
Gate-body leakage current  
Gate threshold voltage  
I
GSS1  
V

GS

= ±8V, V

DS

=0V  
V

DS

= V

GS

, I

D

=250μA  
V

GS

= 4.5V, I

D

=750mA  
±10  
1.2  
μA  
V
V
GS(th)  
0.45  
0.75  
220  
300  
Drain-source on-resistance  
R
DS(ON)  
mΩ  
VGS= 2.5V, ID=400mA  
260  
400  
Dynamic characteristics

B  

Input Capacitance  
C
iss  
C
oss  
C
rss  
21  
15  
8
Output Capacitance  
V

DS

=15V,V

GS

=0V,f=1MHZ  
pF  
Reverse Transfer Capacitance  
Switching Characteristics

B  

Turn-on delay time  
t
d(on)  
6.7  
V

GS

=4.5V,V

DD

=10V,R

G

=10Ω,I

D

=50  
0mA  
ns  
Turn-on rise time  
Turn-off delay time  
Turn-off fall
 
time  
t

r  

t
d(off)  
t

f  

4.8  
17.3  
7.4  
Source-Drain Diode characteristics  
Diode Forward voltage

C  

Notes:  
V
DS  
V

GS

=0V,I

S

=150mA  
1.2  
V
A. Repetitive Rating: Pulse width limited by maximum junction temperature.  
B. These parameters have no way to verify.  
C. Pulse Test: Pulse Width
≤
300us, Duty Cycle
≤
0.5%.  
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DN3134KT  
Typical Performance Characteristics  
Page
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DN3134KT  
SOT-523 Package Outline  
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DN3134KT  
Note  
1.Above package outline conforms to JEITA EAIJ ED-7500A SC-75A.  
2.Dimensions are exclusive of Burrs, Mold Flash & Tie Bar extrusions.  
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DN3134KT  
Important Notice and Disclaimer  
DOESHARE has used reasonable care in preparing the information included in this  
document, but DOESHARE does not warrant that such information is error free.  
DOESHARE assumes no liability whatsoever for any damages incurred by you  
resulting from errors in or omissions from the information included herein.  
DOESHARE no warranty, representation or guarantee regarding the documents,  
circuits and products specification, DOESHARE reservation rights to make  
changes for any documents, products, circuits and specifications at any time  
without notice.  
Purchasers are solely responsible for the choice, selection and use of the  
DOESHARE products and services described herein, and DOESHARE assumes  
no liability whatsoever relating to the choice, selection or use of the products and  
services described herein.  
No license, express or implied, by implication or otherwise under any intellectual  
property rights of DOESHARE.  
Resale of DOESHARE products with provisions different from the statements  
and/or technical features set forth in this document shall immediately void any  
warranty granted by DOESHARE for the DOESHARE product or service described  
herein and shall not create or extend in any manner whatsoever, any liability of  
DOESHARE.  
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