Doeshare-DN3541KM
| Part # | Doeshare-DN3541KM |
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DN3541KM
N-Channel Enhancement Mode Field Effect Transistor
General description
N-Channel Enhancement Mode Field Effect Transistor
Features:
•
•
•
VDS30V
ID 100mA
RDS(ON)( at VGS=4.5V)
＜
8.0 ohm
•
•
RDS(ON)( at VGS=2.5V)
＜
13.0 ohm
ESD Protected Up to 3.0KV (HBM)
Applications
•
•
•
•
•
Trench Power LV MOSFET technology
High Power and current handing capability
Load/Power Switching
Interfacing Switching
Logic Level Shift
Device Marking Code:
Device Type
DN3541KM
Device Marking
KN
Absolute Maximum Ratings
(TA=25
℃
unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-source Voltage
V
DS
30
V
V
Gate-source Voltage
V
GS
I
D
±
20
Drain Current
mA
A
100
1.5
Pulsed Drain Current
A
I
DM
P
D
T
o
tal Power Dissipation @ T
A
=25
℃
Thermal Resistance Junction-to-Ambient @ Steady State
Junction and Storage
T
emperature Range
0.15
W
R
θ
JA
357
℃
/
W
℃
-55
～
+150
T
J
,T
STG
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Electrical Characteristics
(
T
J
=25
℃
unless otherwise noted)
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Static Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
V
GS
= 0
V
,
I
D
=250μA
V
DS
=20
V
,
V
GS
=0V
30
V
I
DSS
1
μA
μA
nA
V
V
GS
=
±
20V, V
DS
=0V
V
GS
=
±
16V, V
DS
=0V
V
DS
= V
GS
, I
D
=250μA
V
GS
= 4.5V, I
D
=100mA
V
GS
= 2.5V, I
D
=10mA
I
S
=100mA,V
GS
=0V
±
2.0
±
200
1.5
Gate-Body Leakage Current
I
GSS
Gate Threshold Voltage
V
GS(th)
0.8
1.1
2.5
3.0
Static Drain-Source On-Resistance
R
DS(ON)
8.0
Ω
13.0
1.2
Diode Forward Voltage
C
V
SD
V
Maximum Body-Diode Continuous
Current
I
S
100
mA
Dynamic Parameters
B
Input Capacitance
C
iss
C
oss
C
rss
18
12
7
Output Capacitance
Reverse Transfer Capacitance
Switching Parameters
B
T
o
tal Gate Charge
V
DS
=30
V
,
V
GS
=0V,f=1MHZ
pF
Q
g
Q
gs
Q
gd
1.7
Gate Source Charge
Gate Drain Charge
V
GS
=10V,V
DS
=30V,I
D
=0.1A
0.19
0.27
nC
Turn-on Delay Time
Turn-off Delay Time
t
D(on)
t
D(off)
5
V
GS
=10V,V
DD
=30
V
,
R
G
=6Ω,I
D
=0.1A
ns
17
Notes:
A. Repetitive Rating: Pulse width limited by maximum junction temperature.
B. These parameters have no way to verify.
C. Pulse
T
est: Pulse Width
≤
300us, Duty Cycle
≤
0.5%.
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Typical Performance Characteristics
Figure1. Output
Characteristics
Figure2. Transfer
Characteristics
Figure3. Capacitance
Characteristics
Figure4. Gate Charge
Figure5. Drain-Source on Resistance
Figure6. Drain-Source on Resistance
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Figure7. Safe Operation Area
Figure8. Switching wave
SOT-723 Package
information
Dimensions In Millimeters
Symbol
Min
Max
A
B
C
D
E
1.100
1.300
0.8typ
1.100
0.700
0.200
0.400
0.150
0.060
0.150
1.300
0.900
0.300
0.500
0.250
0.160
0.250
F
G
H
L
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Important Notice and Disclaimer
DOESHARE has used reasonable care in preparing the information included in this
document, but DOESHARE does not warrant that such information is error free.
DOESHARE assumes no liability whatsoever for any damages incurred by you
resulting from errors in or omissions from the information included herein.
DOESHARE no warranty, representation or guarantee regarding the documents,
circuits and products specification, DOESHARE reservation rights to make
changes for any documents, products, circuits and specifications at any time
without notice.
Purchasers are solely responsible for the choice, selection and use of the
DOESHARE products and services described herein, and DOESHARE assumes
no liability whatsoever relating to the choice, selection or use of the products and
services described herein.
No license, express or implied, by implication or otherwise under any intellectual
property rights of DOESHARE.
Resale of DOESHARE products with provisions different from the statements
and/or technical features set forth in this document shall immediately void any
warranty granted by DOESHARE for the DOESHARE product or service described
herein and shall not create or extend in any manner whatsoever, any liability of
DOESHARE.
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