Doeshare-DP1013KT

Part #Doeshare-DP1013KT
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Doeshare-DP1013KT
DP1013KT  
DP1013KT  
P-Channel Enhancement Mode Field Effect Transistor  
General description  
P-Channel Enhancement Mode Field Effect Transistor  
Features:  
•
•
V

DS

: -20V  
I

D

: -0.65A  
•
•
–
<
R

DS(ON)

( at V

GS

= 4.5V)
 
450 mohm  
–
<
R

DS(ON)

( at V

GS

= 2.5V)
 
600 mohm  
Applications  
•
•
•
Power Management in Note book  
Portable Equipment  
Battery Powered System  
Device Marking Code:  
Device Type  
DP1013KT  
Device Marking  
39K  
DP1013KT  
Absolute Maximum Ratings
(TA=25
℃
unless otherwise noted)  
Symbol  
V

DS  

Parameter  
Rating  
Units  
V
Drain-Source Voltage  
Gate-Source Voltage  
-20  
±10  
V

GS  

V
Drain Current – Continuous (T

A

=25
℃
)  
Drain Current – Continuous (T

A

=70
℃
)  
Drain Current – Pulsed

1  

-650  
mA  
mA  
A
I

D  

-320  
I

DM  

P

D  

-1.6  
Power Dissipation (T

A

=25
℃
)  
312  
mW  
mW/
℃  
℃
Power Dissipation – Derate above 25
℃  
Storage Temperature Range  
2.5  
T

STG  

T

J  

-55 to 150  
-55 to 150  
Operating Junction Temperature Range  
℃
Thermal Characteristics  
Symbol  
Parameter  
Typ.  
Max.  
400  
Unit  
R

θJA  

Thermal Resistance Junction to ambient  
—  
℃
/W  
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DP1013KT  
Electrical Characteristics
(T

J

=25
℃
, unless otherwise noted

)  

Off Characteristics  
Symbol  
BV

DSS  

Parameter  
Conditions  
V

GS

=0V , I

D

=
–
250uA  
Min.  
-20  
—  
Typ.  
—  
Max.  
—  
Unit  
V
Drain-Source Breakdown Voltage  
BV

DSS

Temperature Coefficient  
Reference to 25
℃
, I

D

=
–
1mA  
V

DS

=
–
20V , V

GS

=0V , T

J

=25
℃  
V

DS

=
–
16V , V

GS

=0V , T

J

=125
℃  
V

GS

=±10V , V

DS

=0V  
△
BV

DSS

/
△
T

J  

-0.01  
—  
—  
V/
℃  
uA  
—  
-1  
I

DSS  

I

GSS  

Drain-Source Leakage Current  
Gate-Source Leakage Current  
—  
—  
-10  
±20  
uA  
—  
—  
uA  
On Characteristics  
—  
—  
350  
450  
-0.65  
3
450  
600  
-1.2  
—  
V

GS

=
–
4.5V , I

D

=
–
0.5A  
V

GS

=
–
2.5V , I

D

=
–
0.3A  
R

DS(ON)  

Static Drain-Source On-Resistance  
m
V

GS(th)  

Gate Threshold Voltage  
-0.4  
—  
V
V

GS

=V

DS

, I

D

=
–
250uA  
△
V

GS(th)  

mV/
℃  
V

GS(th)

Temperature Coefficient  
Dynamic and switching Characteristics  
Q

g  

Q

gs  

Q

gd  

T

d(on)  

T

r  

Total Gate Charge

2 , 3  

Gate-Source Charge

2 , 3  

Gate-Drain Charge

2 , 3  

Turn-On Delay Time

2 , 3  

Rise Time

2 , 3  

—  
—  
—  
—  
—  
—  
—  
—  
—  
—  
1
0.28  
0.18  
8
nC  
ns  
V

DS

=
–
10V , V

GS

=
–
4.5V , I

D

=
–
0.2A  
V

DD

=
-1
0V , V

GS

=
–
4.5V ,  
R

G

=10 I

D

=
–
0.2A  
5.2  
30  
T

d(off)  

T

f  

Turn-Off Delay Time

2 , 3  

Fall Time

2 , 3  

18  
C

iss  

C

oss  

C

rss  

Input Capacitance  
40  
pF  
V

DS

=
–
10V , V

GS

=0V , F=1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
15  
6.5  
Drain-Source Diode Characteristics and Maximum Ratings  
Symbol  
Parameter  
Continuous Source Current  
Pulsed Source Current  
Diode Forward Voltage  
Conditions  
Min.  
—  
Typ.  
—  
Max.  
-0.65  
-1.3  
Unit  
A
I

S  

V

G

=V

D

=0V , Force Current  
I

SM  

—  
—  
A
V

GS

=0V , I

S

=
–
0.2A , T

J

=25
℃  
V

SD  

—  
—  
-1.3  
V
Notes:  
A. Repetitive Rating: Pulse width limited by maximum junction temperature.  
B. Pulse Test: Pulse Width≤300us, Duty Cycle≤ 2%.  
C. Essentially independent of operating temperature.  
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DP1013KT  
Typical Performance Characteristics  
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DP1013KT  
SOT-523 Package Outline  
Dimensions In Millimeters  
Dimensions In Inches  
Symbol  
MAX  
0.900  
0.100  
0.800  
0.350  
0.250  
0.200  
1.750  
0.900  
1.750  
MIN  
0.700  
0.000  
0.700  
0.250  
0.150  
0.100  
1.500  
0.700  
1.400  
MAX  
0.035  
0.004  
0.031  
0.014  
0.010  
0.008  
0.069  
0.035  
0.069  
MIN  
0.028  
0.000  
0.028  
0.010  
0.006  
0.004  
0.059  
0.028  
0.055  
A
A1  
A2  
b
b1  
c
D
E
E1  
e
0.5TYP.  
0.02TYP.  
e1  
L
1.100  
0.460  
0.460  
8°  
0.900  
0.300  
0.260  
0°  
0.043  
0.018  
0.018  
8°  
0.035  
0.012  
0.010  
0°  
L1  
θ
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DP1013KT  
Important Notice and Disclaimer  
DOESHARE has used reasonable care in preparing the information included in this  
document, but DOESHARE does not warrant that such information is error free.  
DOESHARE assumes no liability whatsoever for any damages incurred by you  
resulting from errors in or omissions from the information included herein.  
DOESHARE no warranty, representation or guarantee regarding the documents,  
circuits and products specification, DOESHARE reservation rights to make  
changes for any documents, products, circuits and specifications at any time  
without notice.  
Purchasers are solely responsible for the choice, selection and use of the  
DOESHARE products and services described herein, and DOESHARE assumes  
no liability whatsoever relating to the choice, selection or use of the products and  
services described herein.  
No license, express or implied, by implication or otherwise under any intellectual  
property rights of DOESHARE.  
Resale of DOESHARE products with provisions different from the statements  
and/or technical features set forth in this document shall immediately void any  
warranty granted by DOESHARE for the DOESHARE product or service described  
herein and shall not create or extend in any manner whatsoever, any liability of  
DOESHARE.  
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