Doeshare-DP6B20KC

DP6B20KC  

DP6B20KC  

-20V/-0.6A P Channel Small Signal MOSFET  

General description  

-20V/-0.6A P Channel Small Signal MOSFET  

Features:  

•

•

•

•

•

Low RDS(on) @VGS=-4.5V  

-3.3V Logic Level Control  

P Channel SOT-883 Package  

ESD Protection  

Pb−Free, RoHS Compliant  

Applications  

•

•

•

High-side Load Switch• Switching Circuits  

High Speed line Driver  

Relay Driver  

SOT-883  

V

(BR)DSS  

R

DS(ON)

Typ  

I

D

Max  

-0.6A  

510mΩ @ 4.5V  

570mΩ @ 3.3V  

-20V  

Absolute Maximum Ratings

(TA=25

℃

unless otherwise noted)  

Symbol Parameter  

Rating  

Unit  

Common Ratings (T

A

=25°C Unless Otherwise Noted)  

V

GS  

Gate-Source Voltage  

±8  

-20  

V

V

V

Drain-Source Breakdown Voltage  

Maximum Junction

T

e

mperature  

Storage

T

e

mperature Range  

(BR)DSS  

150  

°C  

°C  

T

J

-50 to 150  

T

STG  

Mounted on Large Heat Sink  

I

Pulse Drain Current

T

e

sted

①

 

-2.4  

-0.6  

-0.48  

0.3  

A

A

T

A

=25°C  

T

A

=25°C  

T

A

=70°C  

T

A

=25°C  

T

A

=70°C  

DM  

Continuous Drain Current  

I

D  

Maximum Power Dissipation  

Thermal Resistance Junction-Ambient  

W

P

D

0.24  

400  

°C/W  

R



JA  

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DP6B20KC  

Symbol  

Parameter  

Condition  

Min  

Typ  

Max Unit  

Static Electrical Characteristics @ T

J

= 25°C (unless otherwise stated)  

V

Drain-Source Breakdown Voltage  

V

GS

=0V I

D

=-250μA  

V

DS

=-20V, V

GS

=0V  

-20  

—  

—  

—  

—  

V

(BR)DSS  

Zero Gate Voltage Drain Current(T

A

=25

℃

)  

-1  

μA  

I

DSS  

Zero Gate Voltage Drain Current(T

A

=125

℃

) V

DS

=-16V, V

GS

=0V  

—  

—  

—  

-100  

±10  

-1.0  

650  

uA  

uA  

V

Gate-Body Leakage Current  

Gate Threshold Voltage  

V

GS

=±8V, V

DS

=0V  

V

DS

=V

GS

, I

D

=-250μA  

V

GS

=-4.5V, I

D

=-0.5A  

—  

I

GSS  

V

-0.35  

—  

-0.6  

510  

GS(TH)  

R

R

Drain-Source On-State Resistance

②  

mΩ  

DS(ON)  

Drain-Source On-State Resistance

②  

Drain-Source On-State Resistance

②  

V

GS

=-3.3V, I

D

=-0.3A  

V

GS

=-2.5V, I

D

=-0.1A  

—  

—  

570  

600  

700  

800  

mΩ  

mΩ  

DS(ON)  

R

DS(ON)  

Dynamic Electrical Characteristics @ T

J

= 25°C (unless otherwise stated)  

Input Capacitance  

—  

—  

—  

—  

—  

—  

39  

6.4  

4.2  

1.1  

0.1  

0.3  

—  

—  

—  

—  

—  

—  

pF  

pF  

pF  

nC  

nC  

nC  

C

C

C

iss  

V

DS

=-10V, V

GS

=0

V

,  

f=1MHz  

Output Capacitance  

Reverse Transfer Capacitance  

T

o

tal Gate Charge  

oss  

rss  

V

DS

=-10V  

I

D

=-0.5A,  

V

GS

=-4.5V  

Q

Q

Q

g

Gate Source Charge  

Gate Drain Charge  

gs  

gd  

Switching Characteristics  

Turn on Delay Time  

—  

—  

–

16  

32  

85  

68  

—  

—  

—  

—  

ns  

ns  

ns  

ns  

t

t

t

t

d(on)  

V

DD

=-10V,  

I

D

=-0.5A,  

R

G

=3.3Ω,  

V

GS

=-4.5V  

Turn on Rise Time  

Turn Off Delay Time  

Turn Off Fall Time  

r

d(off)  

f

—  

Source Drain Diode Characteristics  

I

Source drain current(Body Diode)  

T

A

=25

℃  

—  

—  

—  

-0.3  

-1.2  

A

V

SD  

T

j

=25

℃

, I

SD

=-0.3A,  

Forward on voltage

②

 

-0.89  

V

SD  

V

GS

=0V  

Notes:  

①

②

Pulse width limited by maximum allowable junction temperature  

Pulse test ; Pulse width≤300

μ

s, duty cycle≤2%  

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DP6B20KC  

Typical Characteristics  

-V

DS

, Drain -Source Voltage (V)  

Tj – Junction

T

e

mperature (°C)  

Fig1.

Typical Output Characteristics  

Fig2.

Normalized Threshold Voltage Vs.

T

emperature  

-V

GS

,

Gate -Source Voltage (V)  

-ID , Drain Current (A)  

F

ig

3.

Typical Transfer Characteristics  

Fig4.

On-Resistance vs. Drain Current and Gate  

-V

SD

,

Source-Drain Voltage (V)  

-V

DS

, Drain -Source Voltage (V)  

Fig5.

Typical Sou

rc

e-Drain Diode Forward Voltage  

Fig6.

Maximum Safe Operating Area  

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DP6B20KC  

Typical Characteristics  

-V

DS

, Drain-Source Voltage (V)  

Qg,

T

o

tal Gate Charge (nC)  

Fig7.

Typical Capacitance Vs. Drain-Source Voltage  

Fig8.

Typical Gate Charge Vs. Gate-Source Voltage  

Pulse Width (s)  

Fig9.

Normalized Maximum Transient Thermal Impedance  

Fig10.

Switching Time

T

e

st Circuit and waveforms  

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DP6B20KC  

SOT-883 Package outline  

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DP6B20KC  

Important Notice and Disclaimer  

DOESHARE has used reasonable care in preparing the information included in this  

document, but DOESHARE does not warrant that such information is error free.  

DOESHARE assumes no liability whatsoever for any damages incurred by you  

resulting from errors in or omissions from the information included herein.  

DOESHARE no warranty, representation or guarantee regarding the documents,  

circuits and products specification, DOESHARE reservation rights to make  

changes for any documents, products, circuits and specifications at any time  

without notice.  

Purchasers are solely responsible for the choice, selection and use of the  

DOESHARE products and services described herein, and DOESHARE assumes  

no liability whatsoever relating to the choice, selection or use of the products and  

services described herein.  

No license, express or implied, by implication or otherwise under any intellectual  

property rights of DOESHARE.  

Resale of DOESHARE products with provisions different from the statements  

and/or technical features set forth in this document shall immediately void any  

warranty granted by DOESHARE for the DOESHARE product or service described  

herein and shall not create or extend in any manner whatsoever, any liability of  

DOESHARE.  

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