Doeshare-MMBT2907A

Part #Doeshare-MMBT2907A
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Doeshare-MMBT2907A
MMBT2907A  
MMBT2907A  
SOT-23 Plastic-Encapsulate Transistors (PNP)  
General description  
SOT-23 Plastic-Encapsulate Transistors (PNP)  
FEATURES  
•
Complementary to MMBT2907A  
•
Power Dissipation of 250mW  
•
High Stability and High Reliability  
•
SOT-23 Small Outline Plastic Package  
•
Epoxy UL: 94V-0  
DEVICE MARKING CODE: 2F  
Maximum Ratings & Thermal Characteristics
(Ratings at 25
℃
ambient temperature unless otherwise specified.)  
Parameters  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
-60  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter -Base Voltage  
-60  
V
-5  
V
Collector Current-Continuous  
Collector Power Dissipation  
Junction
T
e
mperature  
-600  
250  
mA  
mW  
℃
PC  
Tj  
150  
Storage
T
e
mperature  
T
s
tg  
-55-+150  
500  
℃
Thermal resistance from junction to ambient  
RθJA  
℃
/W  
Electrical Characteristics
(
Ratings at 25
℃
ambient temperature unless otherwise specified).  
Limits  
Parameter  
Symbols  
Test Condition  
Unit  
Min  
-60  
-60  
-5  
Max  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
V
(BR)CBO  
I
C
=-100uA, I
E
=0  
V
V
V
(BR)CEO *
 
I
C
=-1mA, I
B
=0  
V
(BR)EBO  
I
CBO  
I
E
=-10uA, I
C
=0  
V
V
CB
=-50
V
, I
E
=0  
-20  
-10  
-50  
300  
nA  
nA  
nA  
I
EBO  
V
EB
=-3
V
,
I
C
=0  
I
CEX  
V
CE
=-30
V
,
V
BE(off)
=-0.5V  
V
CE
=-10
V
,
I
C
=-150mA  
V
CE
=-10
V
,
I
C
=-0.1mA  
V
CE
=-10
V
,
I
C
=-1mA  
V
CE
=-10
V
,
I
C
=-10mA  
V
CE
=-10
V
,
I
C
=-500mA  
h
FE(1)
*  
h
FE(2)
*  
h
FE(3)
*  
h
FE(4)
*  
h
FE(5)
*  
100  
75  
DC current gain  
100  
100  
50  
V
CE(sat)1 *
 
I
C
=-150mA, I
B
=-15mA  
V
CE(sat)2 *
 
I
C
=-500mA, I
B
=-50mA  
V
BE(sat)1 *
 
I
C
=-150mA, I
B
=-15mA  
V
BE(sat)2 *
 
I
C
=-500mA, I
B
=-50mA  
-0.4  
-1.6  
V
V
Collector-emitter saturation voltage  
Base -emitter saturation voltage  
-1.30  
V
-2.60  
V
Transition frequency  
Delay time  
f
T  
V
CE
=-20
V
,
I
C
=-50mA,f=100MHz  
200  
MHz  
nS  
nS  
nS  
nS  
t
d  
t
r  
10  
25  
V
CE
=-30
V
,
I
C
=-150mA, I
B1
=-15mA  
Rise time  
Storage time  
Fall time  
ts  
tf  
225  
60  
V
CE
=-6
V
,
I
C
=-150mA, I
B1=
I
B2
=-  
15mA  
*Pulse test: pulse width
≤
300us, duty cycle
≤
2.0%  

MMBT2907A  
CLASSIFICATION OF hFE(1)  
HFE  
100-300  
RANK  
L
H
RANGE  
100-200  
200-300  
RATING AND CHARACTERISTIC CURVES  

MMBT2907A  
SOT-23 PACKAGE OUTLINE
Plastic surface mounted package  
Precautions: PCB Design  
Recommended land dimensions for SOT-23 diode. Electrode patterns for PCBs  

MMBT2907A  
Important Notice and Disclaimer  
DOESHARE has used reasonable care in preparing the information included in this  
document, but DOESHARE does not warrant that such information is error free.  
DOESHARE assumes no liability whatsoever for any damages incurred by you  
resulting from errors in or omissions from the information included herein.  
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changes for any documents, products, circuits and specifications at any time  
without notice.  
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DOESHARE products and services described herein, and DOESHARE assumes  
no liability whatsoever relating to the choice, selection or use of the products and  
services described herein.  
No license, express or implied, by implication or otherwise under any intellectual  
property rights of DOESHARE.  
Resale of DOESHARE products with provisions different from the statements  
and/or technical features set forth in this document shall immediately void any  
warranty granted by DOESHARE for the DOESHARE product or service described  
herein and shall not create or extend in any manner whatsoever, any liability of  
DOESHARE.