Doeshare-MMBT4403

MMBT4403  

MMBT4403  

SOT-23 Plastic-Encapsulate Switching

 

Transistors (PNP)  

General description  

SOT-23 Plastic-Encapsulate Switching

 

Transistors (PNP)  

FEATURES  

•

Power Dissipation of 300mW  

•

High Stability and High Reliability  

•

SOT-23 Small Outline Plastic Package  

•

Epoxy UL: 94V-0  

Marking:2T  

Maximum Ratings & Thermal Characteristics

(Ratings at 25

℃

ambient temperature unless otherwise specified.)  

Parameters  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Value  

Unit  

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter -Base Voltage  

-40  

V

-40  

V

-5  

V

Collector Current-Continuous  

Collector Power Dissipation  

Junction

T

e

mperature  

-600  

300  

mA  

mW  

℃

P

C  

T

j  

150  

Storage

T

e

mperature  

T

s

tg  

R

θJA  

-55-+150  

417  

℃

Thermal resistance From junction to ambient  

℃

/W  

Electrical Characteristics

(

Ratings at 25

℃

ambient temperature unless otherwise specified).  

Limits  

Min Max  

Parameter  

Symbols  

Test Condition  

Unit  

Collector-base breakdown voltage  

Collector-emitter breakdown voltage  

Emitter-base breakdown voltage  

Collector cut-off current  

V

(BR)CBO  

V

(BR)CEO  

V

(BR)EBO  

I

CBO  

I

C

=-100uA, I

E

=0  

-40  

-40  

-5  

V

V

I

C

=-1mA, I

B

=0  

I

E

=-100uA, I

C

=0  

V

V

CB

=-35

V

, I

E

=0  

-100  

-100  

-100  

nA  

nA  

nA  

Collector cut-off current  

I

CEX  

V

CE

=-35

V

,

V

EB(off)

=-0.4V  

V

EB

=-4

V

,

I

C

=0  

Emitter cut-off current  

I

EBO  

h

FE(1)  

h

FE(2)  

h

FE(3)  

h

FE(4)  

h

FE(5)  

V

CE

=-1

V

,

I

C

=-0.1mA  

V

CE

=-1

V

,

I

C

=-1mA  

30  

60  

DC current gain  

V

CE

=-1

V

,

I

C

=-10mA  

V

CE

=-2

V

,

I

C

=-150mA  

V

CE

=-2

V

,

I

C

=-500mA  

I

C

=-150mA, I

B

=-15mA  

I

C

=-500mA, I

B

=-50mA  

I

C

=-150mA, I

B

=-15mA  

I

C

=-500mA, I

B

=-50mA  

V

CE

=-10

V

,

I

C

=-20mA,f=100MHz  

100  

100  

20  

300  

-0.40  

-0.75  

-0.95  

-1.30  

V

V

Collector-emitter saturation voltage  

Base -emitter saturation voltage  

V

CE(sat)  

V

BE(sat)  

V

V

Transition frequency  

Delay time  

f

T  

t

d  

t

r  

200  

MHz  

nS  

nS  

nS  

nS  

VCC=-30

V

,

V

BE(off)=-0.5

V

,

I

C=-150mA,  

IB1=-15mA  

15  

20  

Rise time  

Storage time  

Fall time  

ts  

tf  

225  

60  

V

CC

=-30

V

,

I

C

=-150mA, I

B1=

I

B2

=-15mA  

MMBT4403  

RATING AND CHARACTERISTIC CURVES  

MMBT4403  

SOT-23 PACKAGE OUTLINE

Plastic surface mounted package  

Precautions: PCB Design  

Recommended land dimensions for SOT-23 diode. Electrode patterns for PCBs  

MMBT4403  

Important Notice and Disclaimer  

DOESHARE has used reasonable care in preparing the information included in this  

document, but DOESHARE does not warrant that such information is error free.  

DOESHARE assumes no liability whatsoever for any damages incurred by you  

resulting from errors in or omissions from the information included herein.  

DOESHARE no warranty, representation or guarantee regarding the documents,  

circuits and products specification, DOESHARE reservation rights to make  

changes for any documents, products, circuits and specifications at any time  

without notice.  

Purchasers are solely responsible for the choice, selection and use of the  

DOESHARE products and services described herein, and DOESHARE assumes  

no liability whatsoever relating to the choice, selection or use of the products and  

services described herein.  

No license, express or implied, by implication or otherwise under any intellectual  

property rights of DOESHARE.  

Resale of DOESHARE products with provisions different from the statements  

and/or technical features set forth in this document shall immediately void any  

warranty granted by DOESHARE for the DOESHARE product or service described  

herein and shall not create or extend in any manner whatsoever, any liability of  

DOESHARE.