DOWO-BC856B

Part #	DOWO-BC856B
Download	DOWO-BC856B

BC856~BC858

BC856 BC857 BC858

TRANSISTOR(PNP)

SOT-23

贴片塑封三极管

SOT-23 Plastic-Encapsulate Transistors

SOT-23

特征

Features









Complementary to BC846/BC847/BC848

Power Dissipation of 200mW

Ideally suited for automatic insertion

For switching and AF amplifier applications

Marking:

机械数据

Mechanical Data

BC856A=3A BC856B=3B

BC857A=3E BC857B=3F BC857C=3G

BC858A=3J BC858B=3K

BC858C=3L







Small Outline Plastic Package

Epoxy UL: 94V-0

Mounting Position: Any

极限值和温度特性

(

TA = 25

℃

除非另有规定

)

Maximum Ratings & Thermal Characteristics

(

Ratings at 25

℃

ambient temperature unless otherwise specified.)

参数

Parameters

Collector-Base Voltage

符号

Symbol

数值

Value

-80

单位

Unit

V

CBO

BC856

BC857

BC858

BC856

BC857

BC858

-50

-30

-65

-45

V

Collector-Emitter Voltage

V

CEO

V

-30

Emitter -Base Voltage

V

EBO

I

C

P

C

T

j

-6

V

mA

mW

℃

Collector Current-Continuous

Collector Power Dissipation

Junction

T

e

mperature

-100

200

150

Storage

T

e

mperature

Thermal resistance From junction to ambient

T

s

tg

-55-+150

625

℃

R

θJA

℃

/W

电特性

(

TA = 25

℃

除非另有规定

)

Electrical Characteristics

(

Ratings at 25

℃

ambient temperature unless otherwise specified).

界限

Limits

参数

符号

测试条件

单位

Parameter

Symbols

Test Condition

Unit

Min

Max

I

C

=-10uA, I

E

=0

BC856

BC857

BC858

BC856

BC857

BC858

-80

-50

-30

-65

-45

-30

V

(BR)CBO

V

Collector-base breakdown voltage

I

C

=-10mA, I

B

=0

I

E

=10uA, I

C

=0

V

(BR)CEO

V

(BR)EBO

I

CBO

V

V

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

-6

V

CB

=-70V, I

E

=0

V

CB

=-45V, I

E

=0

V

CB

=-25V, I

E

=0

V

CE

=-60V, I

B

=0

V

CE

=-40V, I

B

=0

V

CE

=-25V, I

B

=0

BC856

BC857

BC858

BC856

BC857

BC858

-100

-100

nA

I

CEO

I

EBO

nA

nA

Collector cut-off current

Emitter cut-off current

V

EB

=-5V, I

C

=0

-100

250

BC856A;BC857A;BC858A

BC856B;BC857B;BC858B

BC857C;BC858C

125

220

420

V

CE

=-5V,

I

C

=-2mA

h

FE

DC current gain

475

800

V

CE(sat)

V

BE(sat)

f

T

I

C

=-100mA, I

B

=-5mA

I

C

=-100mA, I

B

=-5mA

V

CE

=-5V, I

C

=-10mA,f=100MHz

V

CB

=-10V, f=1MHz

-0.50

-1.10

V

V

Collector-emitter saturation voltage

Base -emitter saturation voltage

Transition frequency

100

MHz

pF

C

ob

4.5

Collector output capacitance

0571-87006810

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／

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BC856~BC858

Typical characteristics

0571-87006810

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／

3

BC856~BC858

SOT-23 PACKAGE OUTLINE

Plastic surface mounted package

焊盘设计参考

Precautions: PCB Design

Recommended land dimensions for SOT-23 diode. Electrode patterns for PCBs

0571-87006810

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／

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