DOWO-D882-160-320

D882  

Silicon NPN Power Transistor  

.

Features  







High current output up to 3A  

Low saturation voltage  

Complement to 2SB772SQ  

Applications  

PIN1

：

Base PIN 2

：

Collector PIN 3

：

Emitter  

These devices are intended for use in audio frequency  

power amplifier and low speed switching applications  

2C  

1B  

3E  

Absolute Maximum Ratings (

T

a

=25

℃

unless otherwise specified

)  

Parameter  

Collector to Base Voltage  

Symbol  

Rating  

Unit  

V

V

CBO  

40  

30  

5

V

V

CEO  

Collector to Emitter Voltage  

Emitter to Base Voltage  

Collector Current-Continuous  

Peak Collector Current  

Total

Power Dissipation  

Total

Power Dissipation  

Junction

T

emperature  

V

EBO  

V

I

C  

3

A

I

CP  

7

A

P

D  

P

D

(

T

c

=25

℃

)  

T

J  

1

W

W

℃

10  

150  

T

STG  

Storage

T

emperature Range  

-55

～

150  

℃

Ver.: A1 20

1

8

-0

5

–

06 PJ  

1

／

3  

0571-87006810  

D882  

Silicon NPN Power Transistor  

Electrical Characteristics (

T

a

=25

℃

unless otherwise specified

)  

Parameter  

Symbol  

Min.  

Typ.  

Max.  

Unit  

DC Current Gain  

at V

CE

= 2 V, I

C

= 20 mA  

at V

CE

= 2 V, I

C

= 1 A  

h

FE  

h

FE  

h

FE  

h

FE  

h

FE  

30  

60  

–

–

–

–

–

–

–

–

–

–

–

Current Gain Group  

R

Q

P

E

120  

200  

320  

400  

100  

160  

200  

Collector Base Cutoff Current  

Emitter Base Cutoff Current  

Collector Emitter Saturation Voltage  

Base Emitter Saturation Voltage  

Gain Bandwidth Product  

at V

CB

= 30 V  

at V

EB

= 3 V  

I

CBO  

I

EBO  

–

–

–

–

–

–

–

–

1

1

µA  

µA  

V

at I

C

= 2 A, I

B

= 0.2 A  

at I

C

= 2 A, I

B

= 0.2 A  

V

CE(sat)  

V

BE(sat)  

f

T  

–

0.5  

2

–

V

at V

CE

= 5 V, I

C

= 0.1 A  

at V

CB

= 10 V, f = 1 MHz  

90  

45  

–

MHz  

pF  

Output Capacitance  

C

ob  

–

Typical Characteristic Curves  

DC CURRENT GAIN, BASE TO EMITTER  

VOLTAGE vs. COLLECTOR CURRENT  

COLLECTOR CURRENT vs.  

2.0  

COLLECTOR TO EMITTER VOLTAGE  

1000  

300  

V

CE

=2.0V  

Pulse Test  

Pulse Test  

10  

1.6  

h

FE  

9

8

100  

60  

7

1.2  

30  

6

3

5

0.8  

0.4  

4

10  

6

1

0.6  

V

BE  

3

2

0.3  

0.1  

3

I

B

=1mA  

1

10  

0.00

1

0

.003 0.01

 

0.03 0.1

 

0.3  

1

3

0

4

8

12  

16  

20  

I

C

-Collector Current-A  

o

V

CE

-Collector to Emitter Voltage-V  

BASE AND COLLECTOR SATURATION  

VOLTAGE vs. COLLECTOR CURRENT  

10  

I

C

=10.I

B  

Pulse Test  

3

1

0.6  

0.3  

V

BE(sat)  

0.1  

0.06  

0.03  

V

CE(sat)  

0.01  

0.006  

0.003  

0.001 0.003 0.01

 

0.03 0.1

 

0.3  

1

3

10  

I

C

-Collector Current-A  

Ver.: A1 20

1

8

-0

5

–

06 PJ  

2

／

3  

0571-87006810  

D882  

Silicon NPN Power Transistor  

Package Outline  

SOT-89  

Ordering information  

Device  

Package  

Shipping  

SOT-89  

D882  

1000PCS  

Ver.: A1 20

1

8

-0

5

–

06 PJ  

3

／

3  

0571-87006810