ElecSuper-2N7002ET1G-ES
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2N7002ET1G-ES
Rev-1.1
SuperMOS – SOT-23 60V BV
DSS
1.5Ω R
DS(on)
0.38A I
D
, N-channel MOSFET
1. Description
The 2N7002ET1G-ES is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent R
DS(ON)
with low gate charge. Device is suitable for use in
DC-DC conversion, power switch and charging circuit. Standard Product 2N7002ET1G-ES is Pb-free.
2. Features
60V, R
DS(ON)
=1.5Ω(Typ), V
GS
=10V
Material: Halogen free
Reliable and rugged
Avalanche Rated
Use trench MOSFET technology
High density cell design for low R
DS(on)
Low leakage current
3. Applications
PWM applications
Load switch
Power management in portable/desktop PCs
DC/DC conversion
4. Ordering
Information
Quantity per
reel
Flammability
Rating
Part Number
Package
SOT-23
Material
Packing
Reel Size
7 inches
2N7002ET1G-
ES
Halogen
free
Tape &
Reel
3,000 PCS
UL 94V-0
Table-1 Ordering
information
5. Pin
Configuration and Functions
Pin
1
Function
Gate
Outline
Circuit Diagram
D
3
2
Source
Drain
G
1
2
3
S
Table-2 Pin
configuration
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2N7002ET1G-ES
Rev-1.1
6. Specification
Absolute Maximum Rating & Thermal Characteristics
Ratings at 25
℃
ambient temperature unless otherwise specified.
Parameter
Symbol
BV
DSS
V
GS
Limit
60
Unit
V
Drain-Source Voltage
Gate-Source Voltage
±20
V
T
A
=25
℃
0.38
0.25
350
Continuous Drain Current
I
D
A
T
A
=100
℃
Maximum Power Dissipation
Pulsed Drain Current
a
P
D
I
DM
T
J
mW
A
1.5
Operating Junction
T
emperature
Lead
T
emperature
150
°C
°C
°C
T
L
260
Storage
T
emperature Range
T
stg
-55 to 150
Thermal resistance ratings
Single Operation
Parameter
Symbol
R
θJA
Typical
300
Unit
Junction-to-Ambient Thermal Resistance
Note:
°C/W
a: Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1%
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2N7002ET1G-ES
Rev-1.1
Electrical Characteristics
At TA = 25
℃
unless otherwise specified
Parameter
Symbol
OFF CHARACTERISTICS
BV
DSS
V
GS
=0V, I
D
=10mA
Test Conditions
Min. Typ. Max. Unit
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
60
V
V
DS
=60V, V
GS
=0V,TJ=25
℃
V
DS
=48V, V
GS
=0V
，
TJ=125
℃
V
DS
=0V, V
GS
=±20V
1.0
I
DSS
uA
100
Gate-to-source Leakage Current
Forward Trans conductance
I
GSS
g
fs
±10 uA
0.24 S
V
DS
=10V, I
D
=0.1A
ON CHARACTERISTICS
V
GS(TH)
V
GS
=V
DS
, I
D
=250uA
Gate Threshold Voltage
0.8 1.5 2.5
V
V
GS
=10V, I
D
=0.3A
V
GS
=4.5V, I
D
=0.2A
1.5
2.4
3
4
Drain-to-source On-resistance
R
DS(on)
Ω
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
ISS
30.5 45
5.5 10
Output Capacitance
C
OSS
C
RSS
Q
G(TOT)
Q
GS
V
GS
=0V, f=1MHz, V
DS
=10V
V
GS
=10V, V
DS
=30V, I
D
=0.2A
pF
Reverse Transfer Capacitance
Total Gate Charge
4.1
8
2
1.12
Gate-to-Source Charge
Gate-to-Drain Charge
0.1 0.2 nC
0.23 0.5
Q
GD
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
t
d(ON)
t
r
t
d(OFF)
t
f
BODY DIODE CHARACTERISTICS
V
SD
V
GS
=0V, I
S
=1A
3
5
6
10
27
17
V
GS
=10V, V
DS
=30V, I
D
=0.2A,
R
G
=6Ω
ns
V
Turn-Off Delay Time
Fall Time
14
9
Forward Voltage
1
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Rev-1.1
7. Typical
Characteristic
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2N7002ET1G-ES
Rev-1.1
8. Dimension
and Patterns (SOT-23)
θ
D
b
L1
3
E1
E
1
2
L
e
C
e1
A1
A
Units: mm
Dimensions
Dimensions
Symbol
Symbol
Min.
Max.
1.150
1.050
0.500
0.150
3.00
Min.
2.250
Max.
2.550
A
A1
b
c
D
E
0.900
0.900
0.300
0.080
2.800
1.200
E1
e
e1
L
L1
θ
0.950TYP
0.550REF
1.800
2.000
0.300
0.500
1.400
0
°
8
°
0.60
0.80
Note:
1. Controlling
dimension: in millimeters
2. General
tolerance:
±
0.05mm
3. The
pad layout is for reference only
4. Unit:
mm
2.02
1.90
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Rev-1.1
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