ElecSuper-2N7002K-T1-GE3-ES
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2N7002K-T1-GE3-ES
Rev-1.1
SuperMOS – SOT23-3L 60V BV
DSS
1.5Ω R
DS(on)
0.38A I
D
, N-channel MOSFET
1. Description
The 2N7002K-T1-GE3-ES is N-Channel enhancement MOS Field Effect Transistor. Uses advanced
trench technology and design to provide excellent R
DS(ON)
with low gate charge. Device is suitable for
use in DC-DC conversion, power switch and charging circuit. Standard Product 2N7002K-T1-GE3-ES is
Pb-free.
2. Features
60V, R
DS(ON)
=1.5Ω(Typ), V
GS
=10V
Material: Halogen free
Reliable and rugged
Avalanche Rated
Use trench MOSFET technology
High density cell design for low R
DS(on)
Low leakage current
3. Applications
PWM applications
Load switch
Power management in portable/desktop PCs
DC/DC conversion
4. Ordering
Information
Quantity
per reel
Flammability
Rating
Reel
Size
Part Number
Package Marking
Material
Packing
2N7002K-T1-
GE3-ES
SOT23-
3L
Halogen
free
Tape &
Reel
7
72KA
3,000 PCS
UL 94V-0
inches
Table-1 Ordering
information
5. Pin
Configuration and Functions
Pin
1
Function
Gate
Outline
3
Circuit Diagram
D
72KA
2
Source
Drain
G
1
2
3
S
Table-2 Pin
configuration
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2N7002K-T1-GE3-ES
Rev-1.1
6. Specification
Absolute Maximum Rating & Thermal Characteristics
Ratings at 25
℃
ambient temperature unless otherwise specified.
Parameter
Symbol
BV
DSS
V
GS
Limit
60
Unit
V
Drain-Source Voltage
Gate-Source Voltage
±20
V
T
A
=25
℃
0.38
0.25
350
Continuous Drain Current
I
D
A
T
A
=100
℃
Maximum Power Dissipation
Pulsed Drain Current
a
P
D
I
DM
T
J
mW
A
1.5
Operating Junction
T
emperature
Lead
T
emperature
150
°C
°C
°C
T
L
260
Storage
T
emperature Range
T
stg
-55 to 150
Thermal resistance ratings
Single Operation
Parameter
Symbol
R
θJA
Typical
300
Unit
Junction-to-Ambient Thermal Resistance
Note:
°C/W
a: Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1%
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2N7002K-T1-GE3-ES
Rev-1.1
Electrical Characteristics
At TA = 25
℃
unless otherwise specified
Parameter
Symbol
Test Conditions
Min.
Typ.
Max. Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
Forward Trans conductance
BV
DSS
I
DSS
I
GSS
g
fs
V
GS
=0V, I
D
=10mA
60
V
V
DS
=60V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
V
DS
=10V, I
D
=0.1A
1.0
uA
uA
S
±10
0.24
ON CHARACTERISTICS
V
GS(TH)
V
GS
=V
DS
, I
D
=250uA
Gate Threshold Voltage
0.8
1.5
1.5
2.5
3
V
V
GS
=10V, I
D
=0.3A
V
GS
=4.5V, I
D
=0.2A
Drain-to-source On-resistance
R
DS(on)
Ω
2.06
4
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
C
ISS
30.5
5.5
45
10
8
V
GS
=0V, f=1MHz, V
DS
C
OSS
pF
nC
=10V
Reverse Transfer Capacitance
Total Gate Charge
C
RSS
Q
G(TOT)
Q
GS
4.1
1.12
0.1
2
V
GS
=10V, V
DS
=30V,
I
D
=0.2A
Gate-to-Source Charge
Gate-to-Drain Charge
0.2
0.5
Q
GD
0.23
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
t
d(ON)
3
5
6
t
r
10
27
17
V
GS
=10V, V
DS
=30V,
I
D
=0.2A, R
G
=6Ω
ns
V
Turn-Off Delay Time
Fall Time
t
d(OFF)
14
9
t
f
BODY DIODE CHARACTERISTICS
Forward Voltage
V
SD
V
GS
=0V, I
S
=1A
1
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2N7002K-T1-GE3-ES
Rev-1.1
7. Typical
Characteristic
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2N7002K-T1-GE3-ES
Rev-1.1
8. Dimension
and Patterns (SOT23-3L)
D
b
θ
3
L
E1
E
1
2
e
C
e1
A1
A2
A
COMMON DIMENSIONS: UNITS OF MEASURE=MILLIMETER
Dimensions
Dimensions
Symbol
Symbol
Min.
1.05
0
Max.
1.25
0.10
1.15
0.50
0.20
3.02
Min.
1.50
2.65
Max.
1.70
2.95
A
A1
A2
b
E
E1
e
1.05
0.30
0.10
2.82
0.95TYP
e1
L
1.80
0.30
0
°
2.00
0.60
8
°
c
D
θ
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2N7002K-T1-GE3-ES
Rev-1.1
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