ElecSuper-AO3400
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AO3400
Rev-1.1
SuperMOS – SOT-23 30V BV
DSS
,19mΩ R
DS(ON)
,6.0A I
D
N-channel MOSFET
1. Description
The AO3400 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent R
DS(ON)
with low gate charge. Device is suitable for use in
DC-DC conversion, power switch and charging circuit. Standard Product AO3400 is Pb-free.
2. Features
30V, R
DS(ON)
=19mΩ(Typ), V
GS
=10V
Material : Halogen free
Reliable and rugged
Avalanche Rated
Use trench MOSFET technology
High density cell design for low R
DS(on)
Low leakage current
3. Applications
PWM applications
Load switch
Power management in portable/desktop PCs
DC/DC conversion
4. Ordering
Information
Quantity
per reel
3,000
Flammability
Rating
Part Number
AO3400
Package
SOT-23
Marking
R0
Material
Packing
Reel Size
7 inches
Halogen
free
Tape &
Reel
UL 94V-0
PCS
Table-1 Ordering
information
5. Pin
Configuration and Functions
Pin
1
Function
Gate
Outline
3
Circuit Diagram
D
3
2
Source
Drain
R0
1
1
2
2
3
G
S
Table-2 Pin
configuration
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AO3400
Rev-1.1
6. Specification
Absolute Maximum Rating & Thermal Characteristics
Ratings at 25
℃
ambient temperature unless otherwise specified.
Parameter
Drain-Source Voltage
Symbol
BV
DSS
V
GS
Limit
30
Unit
V
Gate-Source Voltage
±12
V
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
6.0
Continuous Drain Current
a
I
D
A
4.6
1.4
Maximum Power Dissipation
a
P
D
W
0.9
Pulsed Drain Current
c
I
DM
T
J
30
A
Operating Junction
T
emperature
Lead
T
emperature
150
°C
°C
°C
T
L
260
Storage
T
emperature Range
T
stg
-55 to 150
Thermal resistance ratings
Single Operation
Parameter
Symbol
R
θJA
Typical
75
Maximum
Unit
Junction-to-Ambient Thermal Resistance
a
Junction-to-Case Thermal Resistance
Note:
t ≤ 10 s
90
70
°C/W
Steady State
R
θJC
43
a
b
c
Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper
Surface mounted on FR4 board using minimum pad size, 1oz copper
Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1%
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AO3400
Rev-1.1
Electrical Characteristics
At TA = 25
℃
unless otherwise specified
Parameter
Symbol
Test Conditions
Min.
30
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
ON CHARACTERISTICS
BV
DSS
I
DSS
V
GS
=0V, I
D
=250uA
V
DS
=24V, V
GS
=0V
V
DS
=0V, V
GS
=±12V
V
1
uA
nA
I
GSS
±100
Gate Threshold Voltage
V
GS(TH)
R
DS(on)
g
FS
V
GS
=V
DS
, I
D
=250uA
V
GS
=10V, I
D
=6.0A
V
GS
=4.5V, I
D
=5.0A
V
GS
=2.5V, I
D
=3.0A
V
DS
=5.0V, I
D
=5.8A
0.6
1.0
19.0
25.0
33.0
7.8
1.3
28.0
33.0
51.0
15
V
mΩ
S
Drain-to-source On-resistance
Forward Trans conductance
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
ISS
V
GS
=0V, f=1MHz, V
DS
=10V
550
62
pF
nC
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
48
6.7
V
GS
=4.5V, V
DS
=10V, I
D
=5.8A
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
0.75
1.65
1.78
Q
GD
SWITCHING CHARACTERISTICS
t
d(ON)
Turn-On Delay Time
Rise Time
3.8
13.0
14.2
2.0
V
GS
=4.5V,
V
DS
=10V,
t
r
ns
V
R
L
=10Ω, R
G
=6Ω
Turn-Off Delay Time
Fall Time
t
d(OFF)
t
f
BODY DIODE CHARACTERISTICS
V
SD
V
GS
=0V, I
S
=1.0A
Forward Voltage
0.75
1.5
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AO3400
Rev-1.1
7. Typical
Characteristic
30
30
25
20
15
10
5
TJ = 25
°
C
Pulse test
V
GS
=10V
V
DS
=5 V
V
GS
=4.5V
V
GS
=3.5V
V
GS
=3.0V
V
GS
=2.5V
25
C
Pulse test
20
10
0
125
C
-45
C
0
0.0
0
1
2
3
4
5
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
– Drain – Source Voltage
(V)
V
GS
– Gate – Source Voltage (V)
Figure 2. Transfer Characteristics
Figure 1. Typ. Output
V
GS
= 4.5V
4
3
2
1
0
f = 1 MHz
V
GS
=0 V
Ciss
Coss
Crss
V
DS
= 15V
I
D
= 5.8A
1000
100
10
0
5
10
15
20
0
1
2
3
4
5
6
7
V
DS
– Drain-Source Voltage
(V)
Q
G
– Total Gate Charge
(nC)
Figure 3. Capacitance Characteristics
Figure 4. Gate Charge Waveform
50
40
30
20
10
10
V
GS
=2.5V
25
°
C
125
°
C
1
-45
°
C
V
GS
=4.5V
V
GS
=10V
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
5
10
15
20
25
30
V
SD
– Source – Drain Voltage
(V)
I
D
– Drain – Source Current
(A)
Figure 5. Body-Diode Characteristics
Figure 6. Rdson-Drain Current
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AO3400
Rev-1.1
1.8
1.6
1.4
1.2
1.0
60
50
40
30
20
I
D
=5A
125
C
25
C
0.8
0
25
50
75
100
125
150
2
4
6
8
10
T
J
– Temperature(
C)
V
GS
– Gate – Source Voltage (V)
Figure 8: On-Resistance vs. Gate-Source
Figure 7. Rdson-Junction Temperature(
℃
)
100
10
120
100
80
60
40
20
0
T
J
(Max)=150
C
TA=25
C
Limited by Rdson
10us
100us
1ms
1
DC
10ms
T
A
=25
C
100ms
0.1
0.01
T
j
=150
C
Single Pulse
1s
10s
0.01
0.1
1
10
100
1E-4
1E-3
0.01
0.1
1
10
100
Pulse Width (s)
V
DS
– Drain- Source Voltage (V)
Figure 9: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 10. Maximum Safe Operation Area
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AO3400
Rev-1.1
8. Dimension
and Patterns (SOT-23)
θ
D
b
L1
3
E1
E
1
2
L
e
C
e1
A1
A
Dimensions
Dimensions
Symbol
Symbol
Min.
Max.
1.150
1.050
0.500
0.150
3.00
Min.
Max.
A
A1
b
0.900
0.900
0.300
0.080
2.800
1.200
E1
e
2.250
2.550
0.950TYP
0.550REF
e1
L
1.800
2.000
c
D
E
L1
θ
0.300
0.500
1.400
0
°
8
°
0.60
0.80
Note:
2.02
1. Controlling
dimension: in millimeters
2. General
tolerance:
±
0.05mm
3. The
pad layout is for reference only
4. Unit:
mm
1.90
DISCLAIMER
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AO3400
Rev-1.1
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