ElecSuper-AO3404A
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AO3404A
Rev-1.1
SuperMOS –SOT23-3L 30V BV
DSS
16mΩ R
DS(on)
6.2A I
D
, N-channel MOSFET
1. Description
The AO3404A is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent R
DS(ON)
with low gate charge. Device is suitable for use in
DC-DC conversion, power switch and charging circuit. Standard Product AO3404A is Pb-free.
2. Features
30V, R
DS(ON)
=16mΩ(Typ), V
GS
=10V
Material: Halogen free
Reliable and rugged
Avalanche Rated
Use trench MOSFET technology
High density cell design for low R
DS(on)
Low leakage current
3. Applications
PWM applications
Load switch
DC/DC conversion
Power management in portable/desktop PCs
4. Ordering
Information
Part
Quantity
per reel
Flammability
Rating
Reel
Size
7
Package
Marking
3404
Material
Packing
Number
Halogen
free
Tape &
Reel
AO3404A
SOT23-3L
3,000 PCS
UL 94V-0
inches
Table-1 Ordering
information
5. Pin
Configuration and Functions
Pin
2
Function
Source
Outline
Circuit Diagram
D
3
1
3
Gate
3404
G
1
2
Drain
S
Table-2 Pin
configuration
6. Specification
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AO3404A
Rev-1.1
Absolute Maximum Rating & Thermal Characteristics
Ratings at 25
℃
ambient temperature unless otherwise specified.
Parameter
Drain-Source Voltage
Symbol
BV
DSS
V
GS
Limit
30
Unit
V
Gate-Source Voltage
±20
V
T
A
=25°C
T
A
=75°C
T
A
=25°C
T
A
=75°C
6.2
Continuous Drain Current
I
D
A
4.7
1.4
Maximum Power Dissipation
P
D
W
0.9
Pulsed Drain Current
a
I
DM
T
J
24.8
150
A
Operating Junction
T
emperature
Lead
T
emperature
°C
°C
°C
T
L
260
Storage
T
emperature Range
T
stg
-55 to 150
Thermal resistance ratings
Single Operation
Parameter
Symbol
R
θJA
Typical
72
Maximum
90
Unit
Junction-to-Ambient Thermal Resistance
a
Note:
°C/W
a: Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper
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AO3404A
Rev-1.1
Electrical Characteristics
At TA = 25
℃
unless otherwise specified
Parameter
Symbol
Test Conditions
Min.
Typ.
Max. Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
BV
DSS
I
DSS
V
GS
=0V, I
D
=250uA
30
V
V
DS
=30V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
1.0
uA
nA
I
GSS
±100
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
R
DS(on)
g
FS
V
GS
=V
DS
, I
D
=250uA
1.0
1.5
16
26
2.2
24
38
40
V
mΩ
S
V
GS
=10V, I
D
=6.2A
V
GS
=4.5V, I
D
=4A
V
DS
=5.0V, I
D
=5A
Drain-to-source On-resistance
Forward Trans conductance
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
C
ISS
255
45
V
GS
=0V, f=1MHz, V
DS
C
OSS
pF
nC
=15V
Reverse Transfer Capacitance
Total Gate Charge
C
RSS
Q
G(TOT)
Q
GS
35
9.8
1.8
2.2
12
2.2
3
V
GS
=10V, V
DS
=15V,
I
D
=5A
Gate-to-Source Charge
Gate-to-Drain Charge
Q
GD
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
t
d(ON)
5
3.2
24
6
t
r
t
d(OFF)
t
f
V
GS
=10V, V
DS
=15V,
R
L
=2Ω, R
GEN
=3Ω
ns
V
Turn-Off Delay Time
Fall Time
BODY DIODE CHARACTERISTICS
V
SD
V
GS
=0V, I
S
=1.0A
Forward Voltage
0.45
1.2
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AO3404A
Rev-1.1
7. Typical
Characteristic
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AO3404A
Rev-1.1
8. Dimension
(SOT23-3L)
Units: mm
COMMON DIMENSIONS
MILLIMETERS
SYMBOL
INCHS
MIN
MAX
3
MIN
MAX
0.118
0.067
0.047
0.02
A
B
C
D
E
G
H
J
2.8
1.5
1
0.11
0.059
0.039
0.012
0.01
1.7
1.2
0.5
0.55
0.3
0.25
0.022
1.90 TYP.
0.075 TYP.
0
0.1
0.21
3
0
0.004
0.008
0.118
0.04
2.6
0.002
0.102
K
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AO3404A
Rev-1.1
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