ElecSuper-AO3416A
| Part # | ElecSuper-AO3416A |
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AO3416A
Rev-1.1
SuperMOS
–
SOT23-3L 20V BV
DSS
, 13m
Ω
R
DS(ON)
, 7.5A I
D
N-channel MOSFET
1. Description
The AO3416A is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent R
DS(ON)
with low gate charge. Device is suitable for use in
DC-DC conversion, power switch and charging circuit. Standard Product AO3416A is Pb-free.
2. Features
⚫
20V, R
DS(ON)
=13m
Ω
(Typ.), V
GS
=4.5V
R
DS(ON)
=16m
Ω
(Typ.), V
GS
=2.5V
⚫
⚫
⚫
⚫
Material: Halogen free
Reliable and rugged
Avalanche Rated
⚫
⚫
Use trench MOSFET technology
High density cell design for low R
DS(on)
Low leakage current
3. Applications
⚫
⚫
PWM applications
Load switch
⚫
⚫
Power management in portable/desktop PCs
DC/DC conversion
4. Ordering
Information
Part
Quantity per
reel
Flammability
Rating
Reel
Size
Package Marking
Number
Material
Packing
SOT23-
Halogen
free
Tape &
Reel
AO3416A
3416
3,000 PCS
UL 94V-0
7 inches
3L
5. Pin
Configuration and Functions
Pin
1
Function
Gate
Outline
Circuit Diagram
3
2
3
Source
Drain
3416
1
2
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AO3416A
Rev-1.1
6. Specification
Absolute Maximum Rating & Thermal Characteristics
Ratings at 25
℃
ambient temperature unless otherwise specified.
Parameter
Drain-Source Voltage
Symbol
BV
DSS
V
GS
Limit
20
Unit
V
Gate-Source Voltage
±10
V
T
A
=25°C
T
A
=75°C
T
A
=25°C
T
A
=75°C
7.5
Continuous Drain Current
I
D
A
5.8
1.39
0.83
30
Maximum Power Dissipation
P
D
W
Pulsed Drain Current
I
DM
T
J
A
Operating Junction
T
e
mperature
Lead
T
e
mperature
150
°C
°C
°C
T
L
260
Storage
T
e
mperature Range
T
stg
-55 to 150
Thermal resistance ratings
Single Operation
Parameter
Symbol
R
θJA
Typical Maximum
70 90
Unit
Junction-to-Ambient Thermal Resistance
°C/W
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AO3416A
Rev-1.1
Electrical Characteristics
At TA = 25
℃
unless otherwise specified
Parameter
Symbol
T
e
st Conditions
Min.
20
Typ.
Max. Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
=250uA
V
DS
=20V, V
GS
=0V
V
DS
=0V, V
GS
=±10V
V
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
I
DSS
I
GSS
1
uA
uA
±10
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
R
DS(on)
g
fs
V
GS
=V
DS
, I
D
=250uA
V
GS
=4.5V, I
D
=7.5A
V
GS
=2.5V, I
D
=5A
V
DS
=5V, I
D
=7.5A
0.5
0.7
13
16
0.9
17
23
40
V
mΩ
mΩ
S
Drain-to-source On-resistance
Forward transconductance
CHARGES, CAPACITANCES AND GATE RESISTANCE
C
ISS
Input Capacitance
1300
160
88
V
GS
=0V, f=1MHz,
Output Capacitance
C
OSS
pF
nC
V
DS
=10V
Reverse Transfer Capacitance
T
o
tal Gate Charge
C
RSS
Q
G(TOT)
Q
GS
10
V
GS
=4.5V, V
DS
=10V,
I
D
=7.5A
Gate-to-Source Charge
Gate-to-Drain Charge
4.5
2.5
Q
GD
SWITCHING CHARACTERISTICS
t
d(ON)
Turn-On Delay Time
Rise Time
280
330
4
t
r
V
GS
=4.5V, V
DS
=10V,
R
L
=1.5Ω, R
G
=3Ω
ns
V
Turn-Off Delay Time
Fall Time
t
d(OFF)
t
f
BODY DIODE CHARACTERISTICS
V
SD
V
GS
=0V, I
S
=7.5A
2.5
Forward Voltage
1.5
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AO3416A
Rev-1.1
7. Typical
Characteristic
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AO3416A
Rev-1.1
8. Dimension
(SOT23-3L)
D
b
θ
3
L
E1
E
1
2
e
C
e1
A1
A2
A
COMMON DIMENSIONS: UNITS OF MEASURE=MILLIMETER
Dimensions
Dimensions
Symbol
Symbol
Min.
1.05
0
Max.
1.25
0.10
1.15
0.50
0.20
3.02
Min.
1.50
2.65
Max.
1.70
2.95
A
A1
A2
b
E
E1
e
1.05
0.30
0.10
2.82
0.95TYP
e1
L
1.80
0.30
0
°
2.00
0.60
8
°
c
D
θ
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AO3416A
Rev-1.1
DISCLAIMER
ELECSUPER PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES
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(2) designing, validating and testing your application;
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development of an application that uses the ElecSuper products described in the resource. Other reproduction and display of
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’s products
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’s
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’s applicable warranties or warrant
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