ElecSuper-AO4435
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AO4435
Rev-1.3
SuperMOS – SOP8 -30V BV
DSS
,13.5mΩ R
DS(on)
, -10.5A I
D
P-channel MOSFET
1. Description
The AO4435 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology
and design to provide excellent R
DS(ON)
with low gate charge. Device is suitable for use in DC-DC
conversion, power switch and charging circuit. Standard Product AO4435 is Pb-free.
2. Features
-30V, R
DS(ON)
=13.5mΩ(Typ), V
GS
=-10V
Fast Switching
Material: Halogen free
Reliable and rugged
Avalanche Rated
High density cell design for low R
DS(on)
Low leakage current
3. Applications
PWM applications
100% UIS TESTED
Load switch
Power management in portable/desktop PCs
DC/DC conversion
4. Ordering
Information
Part Number
AO4435
Package
SOP8
Marking
Material
Quantity per reel
Flammability Rating
Halogen
free
ES4435/lot
3,000 PCS
UL 94V-0
Table-1 Ordering
information
5. Pin
Configuration and Functions
Pin
4
Function
Gate
Outline
Circuit Diagram
8
7
6
5
LOT
ES4435
1/2/3
Source
Drain
5/6/7/8
1
2
3
4
Table-2 Pin
configuration
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AO4435
Rev-1.3
6. Specification
Absolute Maximum Rating & Thermal Characteristics
Ratings at 25
℃
ambient temperature unless otherwise specified.
Parameter
Drain-Source Voltage
Symbol
BV
DSS
V
GS
Limit
-30
Unit
V
Gate-Source Voltage
±25
V
T
A
=25°C
-10.5
Continuous Drain Current
I
D
A
T
A
=70°C
T
A
=25°C
-8.0
3.1
Maximum Power Dissipation
P
D
W
T
A
=70°C
2.0
-80
Pulsed Drain Current
I
DM
I
AS
A
A
Avalanche Current, Single Pulsed
a
Avalanche Energy, Single Pulsed
a
Operating Junction
T
emperature
Storage
T
emperature Range
20
60
E
AS
T
J
mJ
°C
°C
150
T
stg
-55 to +150
Thermal resistance ratings
Single Operation
Symbol
Parameter
Typical
Maximum
Unit
Junction-to-Ambient Thermal Resistance
Junction-to-Lead Thermal Resistance
R
θJA
R
θJL
32
40
4
°C/W
3.2
Note:
a: EAS condition
：
Tj=25
℃
,V
DD
=-30V,V
G
=-10V,L=0.3mH,Rg=25Ω
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AO4435
Rev-1.3
Electrical Characteristics
At TA = 25
℃
unless otherwise specified
Parameter
Symbol
Test Conditions
Min.
-30
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
BV
DSS
I
DSS
V
GS
=0V, I
D
=-250uA
V
V
GS
=0V, V
DS
=-30V
V
GS
=±25V, V
DS
=0V
-1
uA
nA
I
GSS
±100
ON CHARACTERISTICS
V
GS(TH)
V
GS
=V
DS
, I
D
=-250uA
Gate Threshold Voltage
-1.0
-1.5
13.5
18.5
-2.0
21
V
V
GS
=-10V, I
D
=-10A
V
GS
=-4.5V, I
D
=-7A
Drain-to-source On-resistance
R
DS(on)
mΩ
27
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
ISS
C
OSS
C
RSS
R
g
1230
160
145
10
V
GS
=0V
V
DS
=-15V
f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
pF
Ω
f=1MHZ
V
GS
=-10V
V
DS
=-15V
I
D
=-10A
Total Gate Charge
Q
G(TOT)
Q
GS
26.4
6
Gate-to-Source Charge
Gate-to-Drain Charge
nC
Q
GD
4.3
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
t
d(ON)
18
22
55
42
V
GS
=-10V
V
DS
=-15V
R
L
=1Ω
t
r
t
d(OFF)
t
f
ns
Turn-Off Delay Time
Fall Time
R
G
=3Ω
BODY DIODE CHARACTERISTICS
Forward Voltage
V
SD
t
rr
V
GS
=0V, I
SD
=-1.0A
V
GS
=0V, I
SD
=-10A,
d
i
/d
t
=100A/us
-0.75
32
-1
V
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
Q
rr
28
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AO4435
Rev-1.3
7. Typical
Characteristic
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AO4435
Rev-1.3
8. Dimension
and Patterns (SOP8)
COMMON DIMENSIONS: UNITS OF MEASURE=MILLIMETER
Dimensions
Dimensions
Symbol
Symbol
Min.
1.40
0.05
1.30
0.37
0.35
0.17
0.15
4.80
5.85
3.80
Typ.
1.55
Max.
1.70
0.25
1.50
0.47
0.45
0.27
0.25
5.00
6.15
4.00
Min.
0.96
Typ.
1.06
Max.
1.16
A
A1
A2
b
L1
L2
0.25 BSC
1.40
R
0.07
0.07
0.25
15
°
11
°
15
°
11
°
0
°
R1
h
b1
c
0.35
17
°
13
°
17
°
13
°
3
°
0.45
19
°
15
°
19
°
15
°
6
°
θ
1
θ
2
θ
3
θ
4
θ
5
θ
6
Φ
c1
D
4.90
E
E1
e
3.90
1.27 BSC
55
°
0.40
85
°
0.60
L
0.57
0.87
0.50
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AO4435
Rev-1.3
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