ElecSuper-AO4842
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AO4842
Rev-1.1
SuperMOS –SOP8 30V BV
DSS
16mΩ R
DS(on)
7.7A I
D
, N-channel MOSFET
1. Description
The AO4842 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent R
DS(ON)
with low gate charge. Device is suitable for use in
DC-DC conversion, power switch and charging circuit. Standard Product AO4842 is Pb-free.
2. Features
30V, R
DS(ON)
=16mΩ(Typ), V
GS
=10V
Material: Halogen free
Reliable and rugged
Avalanche Rated
Use trench MOSFET technology
High density cell design for low R
DS(on)
Low leakage current
3. Applications
PWM applications
100% UIS TESTED
Load switch
Power management in portable/desktop PCs
DC/DC conversion
4. Ordering
Information
Quantity
per reel
3,000
Flammability
Part Number
AO4842
Package
SOP8
Marking
Material
Packing
Reel Size
13 inches
Rating
Halogen
free
Tape &
Reel
ES4842/lot
UL 94V-0
PCS
Table-1 Ordering
information
5. Pin
Configuration and Functions
Pin
1
Function
Source1
Gate1
Outline
Circuit Diagram
8
7
6
5
2
7/8
3
Drain1
Source2
Gate2
ES4842
lot
4
1
2
3
4
5/6
Drain2
Table-2 Pin
configuration
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AO4842
Rev-1.1
6. Specification
Absolute Maximum Rating & Thermal Characteristics
Ratings at 25
℃
ambient temperature unless otherwise specified.
Parameter
Drain-Source Voltage
Symbol
BV
DSS
V
GS
Limit
30
Unit
V
Gate-Source Voltage
±20
7.7
V
T
A
=25°C
T
A
=75°C
T
A
=25°C
T
A
=75°C
Continuous Drain Current
I
D
A
5.8
2
Maximum Power Dissipation
P
D
W
1.2
Avalanche Current, Single Pulsed
b
Avalanche Energy, Single Pulsed
b
Pulsed Drain Current
a
I
AS
E
AS
I
DM
T
J
12
A
mJ
A
21.6
30
Operating Junction
T
emperature
Lead
T
emperature
150
260
-55 to 150
°C
°C
°C
T
L
Storage
T
emperature Range
T
stg
Thermal resistance ratings
Single Operation
t ≤ 10 s
Parameter
Symbol
R
θJA
Typical
50
Maximum
62.5
Unit
Junction-to-Ambient Thermal Resistance
a
Note:
°C/W
a: Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper
b: EAS condition
：
Tj=25
℃
,V
DD
=30V,V
G
=10V,L=0.3mH,Rg=25Ω
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AO4842
Rev-1.1
Electrical Characteristics
At TA = 25
℃
unless otherwise specified
Parameter
Symbol
Test Conditions
Min.
Typ.
Max. Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
BV
DSS
I
DSS
V
GS
=0V, I
D
=250uA
30
V
V
DS
=30V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
1.0
uA
nA
I
GSS
±100
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
R
DS(on)
g
FS
V
GS
=V
DS
, I
D
=250uA
1.0
1.5
16
25
2.2
23
37
40
V
mΩ
S
V
GS
=10V, I
D
=7.7A
V
GS
=4.5V, I
D
=5A
V
DS
=5.0V, I
D
=7.7A
Drain-to-source On-resistance
Forward Trans conductance
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
C
ISS
373
67
448
11
V
GS
=0V, f=1MHz, V
DS
C
OSS
pF
nC
=15V
Reverse Transfer Capacitance
Total Gate Charge
C
RSS
Q
G(TOT)
Q
GS
41
7.2
14.9
2.9
V
GS
=4.5V, V
DS
=15V,
I
D
=7.7A
Gate-to-Source Charge
Gate-to-Drain Charge
Q
GD
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
t
d(ON)
4.5
2.7
t
r
t
d(OFF)
t
f
V
GS
=10V, V
DS
=15V,
R
L
=1.95Ω, R
GEN
=3Ω
ns
V
Turn-Off Delay Time
Fall Time
14.9
2.9
BODY DIODE CHARACTERISTICS
V
SD
V
GS
=0V, I
S
=1.0A
Forward Voltage
0.45
1.2
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AO4842
Rev-1.1
7. Typical
Characteristic
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AO4842
Rev-1.1
8. Dimension
(SOP8)
BL
BW
TL
Z
FL
LL
LP
LW
COMMON DIMENSIONS: UNITS OF MEASURE=MILLIMETER
Dimensions
Dimensions
Symbol
Symbol
Min.
Max.
Min.
0.50
1.25
Max.
0.80
1.30
A
1.75
FL
LP
LL
LW
TL
Z
A1
A2
A3
BL
BW
FT
0.05
1.40
0.15
1.50
1.1 BSC
0.54
0.623 BSC
0.38
5.90
0.43
6.10
4.92
3.70
0.20
5.80
4.10
0.21
θ
0
°
8
°
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AO4842
Rev-1.1
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