ElecSuper-AOD403
| Part # | ElecSuper-AOD403 |
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AOD403
Rev-1.1
SuperMOS – TO-252 -30V BV
DSS
,8m
Ω
R
DS(ON)
,-62A I
D
P-channel MOSFET
1. Description
The AOD403 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent R
DS(ON)
with low gate charge. Device is suitable for use in
DC-DC conversion, power switch and charging circuit. Standard Product AOD403 is Pb-free.
2. Features
-30V, R
DS(ON)
=8mΩ, V
GS
=-10V
Fast Switching
Material : Halogen free
Reliable and rugged
Avalanche Rated
High density cell design for low R
DS(on)
Low leakage current
3. Applications
PWM applications
100% UIS TESTED!
Load switch
Power management in portable/desktop PCs
DC/DC conversion
4. Ordering
Information
Part Number
AOD403
Package
TO-252
Marking
Material
Halogen free
Quantity per reel
2,500 PCS
Flammability Rating
UL 94V-0
ESD403/lot
Table-1 Ordering
information
5. Pin
Configuration and Functions
Pin
1
Function
Gate
Outline
Circuit Diagram
2
ESD403
lot
3
Source
Drain
2
1
3
Table-2 Pin
configuration
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AOD403
Rev-1.1
6. Specification
Absolute Maximum Rating & Thermal Characteristics
Ratings at 25
℃
ambient temperature unless otherwise specified.
Parameter
Drain-Source Voltage
Symbol
BV
DSS
V
GS
Limit
-30
Unit
V
Gate-Source Voltage
±25
V
T
C
=25°C
T
C
=75°C
T
C
=25°C
T
C
=75°C
-62
Continuous Drain Current
a
I
D
A
-48
79
Maximum Power Dissipation
a
P
D
W
47
Pulsed Drain Current
b
I
DM
I
AS
-200
24
A
A
Avalanche Current, Single Pulsed
c
Avalanche Energy, Single Pulsed
c
Operating Junction
T
emperature
Storage
T
emperature Range
E
AS
T
J
86.4
150
mJ
°C
°C
T
stg
-55 to +150
Thermal resistance ratings
Single Operation
Parameter
Symbol
R
θJA
Typical
16
Maximum
20
Unit
Junction-to-Ambient Thermal Resistance
a
t ≤ 10 s
°C/W
Junction-to-Case Thermal Resistance
Note:
Steady State
R
θJC
0.9
1.6
a: Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper
b: Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1%
c: EAS condition
：
Tj=25
℃
,V
DD
=-30V,V
G
=-10V,L=0.3mH,Rg=25Ω
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AOD403
Rev-1.1
Electrical Characteristics
At TA = 25
℃
unless otherwise specified
Parameter
Symbol
Test Conditions
Min.
-30
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
BV
DSS
I
DSS
V
GS
=0V, I
D
=-250uA
V
V
DS
=-30V, V
GS
=0V
V
DS
=0V, V
GS
=±25V
-1
uA
nA
I
GSS
±100
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
R
DS(on)
g
FS
V
GS
=V
DS
, I
D
=-250uA
-1
-1.5
8
-2
12
18
80
V
mΩ
S
V
GS
=-10V, I
D
=-20A
V
GS
=-4.5V, I
D
=-20A
V
DS
=-5.0V, I
D
=-20A
Drain-to-source On-resistance
Forward Trans conductance
11.5
CHARGES, CAPACITANCES AND GATE RESISTANCE
C
ISS
Input Capacitance
Output Capacitance
2890 3500
V
GS
=0V, f=1MHz,
C
OSS
585
470
3.8
51
760
660
5.7
61
pF
Ω
V
DS
=15V
Reverse Transfer Capacitance
Gate Resistance
C
RSS
R
g
f=1MHZ
Total Gate Charge
Q
G(TOT)
Q
GS
V
GS
=-10V, V
DS
=-15V,
I
D
=-20A
Gate-to-Source Charge
Gate-to-Drain Charge
nC
12
14
Q
GD
16
22
SWITCHING CHARACTERISTICS
t
d(ON)
Turn-On Delay Time
Rise Time
16
12
45
22
t
r
t
d(OFF)
t
f
V
GS
=-10V, V
DS
=-15V,
R
L
=1Ω, R
G
=3Ω
ns
V
Turn-Off Delay Time
Fall Time
BODY DIODE CHARACTERISTICS
V
SD
V
GS
=0V, I
S
=-1.0A
Forward Voltage
-0.7
-1
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AOD403
Rev-1.1
7. Typical
Characteristic
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AOD403
Rev-1.1
8. Dimension
and Patterns (TO-252)
D1
c
h
D2
b
e
D
MILLIMETER
SYMBOL
MILLIMETER
SYMBOL
MIN
Typ.
MAX
2.400
0.127
0.740
0.580
6.700
MIN
0.000
9.900
Typ.
0.100
MAX
0.200
10.300
A
2.200
0.000
0.640
0.460
6.500
2.300
h
A1
L
10.100
2.888 REF
1.550
b
0.690
0.520
L1
L2
L3
L4
Φ
C(
电镀后
)
1.400
1.700
D
D1
D2
D3
E
6.600
1.600 REF
0.800
5.334 REF
4.826 REF
3.166 REF
6.100
0.600
1.100
1.000
1.300
1.200
θ
0
°
8
。
6.000
6.200
θ1
θ2
9
°
TYP
e
2.286 TYP
9
°
TYP
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AOD403
Rev-1.1
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