ElecSuper-AOD536
| Part # | ElecSuper-AOD536 |
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AOD536
Rev-1.1
SuperMOS –TO-252 30V BV
DSS
7mΩ R
DS(on)
39A I
D
, N-channel MOSFET
1. Description
The AOD536 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent R
DS(ON)
with low gate charge. Device is suitable for use in
DC-DC conversion, power switch and charging circuit. Standard Product AOD536 is Pb-free.
2. Features
30V, R
DS(ON)
=7mΩ(Typ), V
GS
=10V
Use trench MOSFET technology
High density cell design for low R
DS(on)
Material: Halogen free
Reliable and rugged
Avalanche Rated
Low leakage current
3. Applications
PWM applications
100% UIS TESTED!
Load switch
Power management in portable/desktop PCs
DC/DC conversion
4. Ordering
Information
Part
Number
Quantity
per reel
Flammability
Reel
Size
Package
TO-252
Marking
ES536/lot
Material
Packing
Rating
Halogen
free
Tape &
Reel
13
inches
AOD536
2,500 PCS
UL 94V-0
5. Pin
Configuration and Functions
Pin
1
Function
Gate
Outline
2
Circuit Diagram
D
ESD536
lot
3
2
Source
Drain
G
S
1
3
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AOD536
Rev-1.1
6. Specification
Absolute Maximum Rating & Thermal Characteristics
Ratings at 25
℃
ambient temperature unless otherwise specified.
Parameter
Drain-Source Voltage
Symbol
BV
DSS
V
GS
Limit
30
Unit
V
Gate-Source Voltage
±20
39
V
T
C
=25°C
T
C
=75°C
T
C
=25°C
T
C
=75°C
Continuous Drain Current
I
D
A
30
31
Maximum Power Dissipation
P
D
W
19
Pulsed Drain Current
a
I
DM
I
AS
E
AS
T
J
150
19
A
A
Avalanche Current, Single Pulsed
b
Avalanche Energy, Single Pulsed
b
Operating Junction
T
emperature
Lead
T
emperature
54.2
150
260
-55 to 150
mJ
°C
°C
°C
T
L
Storage
T
emperature Range
T
stg
Thermal resistance ratings
Single Operation
Parameter
Symbol
Typ
15
Max
20
4
Unit
Junction-to-Ambient Thermal Resistance
t ≤ 10 s
R
θJA
R
θJC
°C/W
Junction-to-Case Thermal Resistance
Note:
Steady State
3.3
a: Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1%
b: EAS condition
：
Tj=25
℃
,V
DD
=30V,V
G
=10V,L=0.3mH,Rg=25Ω
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AOD536
Rev-1.1
Electrical Characteristics
At TA = 25
℃
unless otherwise specified
Parameter
Symbol
Test Conditions
Min.
Typ.
Max. Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
BV
DSS
I
DSS
V
GS
=0V, I
D
=250uA
30
V
V
DS
=30V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
1.0
uA
nA
I
GSS
±100
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
R
DS(on)
g
FS
V
GS
=V
DS
, I
D
=250uA
1.0
1.4
7
1.8
12
V
mΩ
S
V
GS
=10V, I
D
=20A
V
GS
=4.5V, I
D
=20A
V
DS
=5.0V, I
D
=20A
Drain-to-source On-resistance
Forward Trans conductance
10.5
18
100
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
C
ISS
1150
400
45
V
GS
=0V, f=1MHz,
C
OSS
pF
nC
V
DS
=15V
Reverse Transfer Capacitance
Total Gate Charge
C
RSS
Q
G(TOT)
Q
GS
15
V
GS
=4.5V, V
DS
=15V,
I
D
=20A
Gate-to-Source Charge
Gate-to-Drain Charge
3
Q
GD
2.5
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
t
d(ON)
7.6
13.5
18
t
r
V
GS
=10V, V
DS
=20V,
R
L
=0.75Ω, R
G
=6Ω
ns
V
Turn-Off Delay Time
Fall Time
t
d(OFF)
t
f
4.6
BODY DIODE CHARACTERISTICS
Forward Voltage
V
SD
V
GS
=0V, I
S
=1.9A
0.7
1.5
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AOD536
Rev-1.1
7. Typical
Characteristic
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AOD536
Rev-1.1
8. Dimension
(TO-252)
D1
c
h
D2
b
e
D
MILLIMETER
Typ.
MILLIMETER
Typ.
SYMBOL
SYMBOL
MIN
MAX
MIN
0.000
9.900
MAX
0.200
10.300
A
2.200
0.000
0.640
0.460
6.500
2.300
2.400
0.127
0.740
0.580
6.700
h
0.100
A1
L
10.100
b
0.690
0.520
L1
L2
L3
L4
Φ
2.888 REF
1.550
C(
电镀后
)
1.400
1.700
D
D1
D2
D3
E
6.600
1.600 REF
0.800
5.334 REF
4.826 REF
3.166 REF
6.100
0.600
1.100
1.000
1.300
1.200
θ
0
°
8
。
6.000
6.200
θ1
θ2
9
°
TYP
e
2.286 TYP
9
°
TYP
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AOD536
Rev-1.1
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