ElecSuper-ES3139KQ
| Part # | ElecSuper-ES3139KQ |
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ES3139KQ
Rev-1.1
SuperMOS
–
SOT-323 -20V BV
DSS
, 580m
Ω
R
DS(ON)
, P-channel MOSFET
1. Description
The ES3139KQ is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent R
DS(ON)
with low gate charge. Device is suitable for use in
DC-DC conversion, power switch and charging circuit. Standard Product ES3139KQ is Pb-free.
2. Features
⚫
-20V, R
DS(ON)
=580m
Ω
(Typ), V
GS
=-4.5V
Use trench MOSFET technology
High density cell design for low R
DS(on)
⚫
⚫
⚫
⚫
Material: Halogen free
Reliable and rugged
Avalanche Rated
⚫
⚫
Low leakage current
3. Applications
⚫
⚫
PWM applications
Load switch
⚫
⚫
Power management in portable/desktop PCs
DC/DC conversion
4. Ordering
Information
Quantity Flammability
Reel
Size
Part Number
ES3139KQ
Package
SOT-323
Marking
39KQ
Material
Packing
per reel
3,000
PCS
Rating
Halogen
free
Tape &
Reel
UL 94V-0
7 inches
5. Pin
Configuration and Functions
Pin
1
Function
Gate
Outline
Circuit Diagram
3
2
3
Source
Drain
39KQ
1
2
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ES3139KQ
Rev-1.1
6. Specification
Absolute Maximum Rating & Thermal Characteristics
Ratings at 25
℃
ambient temperature unless otherwise specified.
Parameter
Drain-Source Voltage
Symbol
BV
DSS
V
GS
Limit
-20
Unit
V
Gate-Source Voltage
±12
V
T
A
=25°C
T
A
=75°C
-0.5
Continuous Drain Current
I
D
A
-0.4
Maximum Power Dissipation
Pulsed Drain Current
P
D
I
DM
T
J
0.15
-2.6
W
A
Operating Junction
T
e
mperature
Lead
T
e
mperature
150
°C
°C
°C
T
L
260
Storage
T
e
mperature Range
T
stg
-55 to 150
Thermal resistance ratings
Single Operation
Parameter
Symbol
R
θJA
Typical Maximum
833
Unit
Junction-to-Ambient Thermal Resistance
°C/W
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ES3139KQ
Rev-1.1
Electrical Characteristics
At TA = 25
℃
unless otherwise specified
Parameter
Symbol
T
e
st Conditions
Min.
-20
Typ.
Max. Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
BV
DSS
I
DSS
V
GS
=0V, I
D
=-250uA
V
V
DS
=-20V, V
GS
=0V
V
DS
=0V, V
GS
=±10V
-1
uA
uA
I
GSS
±10
ON CHARACTERISTICS
V
GS(TH)
V
GS
=V
DS
, I
D
=-250uA
Gate Threshold Voltage
-0.35 -0.62
-1.2
850
V
V
GS
=-4.5V, I
D
=-0.5A
V
GS
=-2.5V, I
D
=-0.3A
V
GS
=-1.8V, I
D
=-0.2A
580
855
Drain-to-source On-resistance
R
DS(on)
1200
mΩ
1350 2000
CHARGES, CAPACITANCES AND GATE RESISTANCE
C
ISS
Input Capacitance
71
20
V
GS
=0V, f=1MHz,
Output Capacitance
C
OSS
pF
nC
V
DS
=-10V
Reverse Transfer Capacitance
T
o
tal Gate Charge
C
RSS
Q
G(TOT)
Q
GS
15
1.25
0.38
0.28
V
GS
=-4.5V, V
DS
=-10V,
I
D
=-0.5A
Gate-to-Source Charge
Gate-to-Drain Charge
Q
GD
SWITCHING CHARACTERISTICS
t
d(ON)
Turn-On Delay Time
Rise Time
4
t
r
t
d(OFF)
t
f
19
16
25
V
GS
=-4.5V, V
DS
=-10V,
R
L
=2.5Ω, R
G
=-3Ω
ns
V
Turn-Off Delay Time
Fall Time
BODY DIODE CHARACTERISTICS
V
SD
V
GS
=0V, I
S
=-0.5A
Forward Voltage
-1.2
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ES3139KQ
Rev-1.1
7. Typical
Characteristic
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ES3139KQ
Rev-1.1
8. Dimension
(SOT-323)
D
θ
e1
L1
E1
L
b
c
e
A1
A
A2
Millimeters
Max
Millimeters
Symbol
Symbol
Min
0.90
0.00
0.90
0.20
0.08
2.00
2.15
Min
Max
1.35
A
A1
A2
b
1.10
0.10
1.00
0.40
0.15
2.20
2.45
E1
e
1.15
0.65 TYP
e1
L
1.20
0.26
1.40
0.46
c
L1
θ
0.525 REF
D
0
°
8
°
E
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ES3139KQ
Rev-1.1
DISCLAIMER
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(2) designing, validating and testing your application;
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