ElecSuper-ESD516
| Part # | ElecSuper-ESD516 |
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ESD516
Rev-1.1
SuperMOS
–
TO-252 30V BV
DSS
5m
Ω
R
DS(on)
65A I
D
, N-channel MOSFET
1. Description
The ESD516 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent R
DS(ON)
with low gate charge. Device is suitable for use in
DC-DC conversion, power switch and charging circuit. Standard Product ESD516 is Pb-free.
2. Features
⚫
30V, R
DS(ON)
=5
mΩ
(Typ), V
GS
=10V
⚫
⚫
⚫
⚫
Material: Halogen free
Reliable and rugged
Avalanche Rated
⚫
⚫
Use trench MOSFET technology
High density cell design for low R
DS(on)
Low leakage current
3. Applications
⚫
⚫
⚫
⚫
PWM applications
100% UIS TESTED!
Load switch
Power management in portable/desktop PCs
DC/DC conversion
4. Ordering
Information
Part
Quantity Flammability
Reel
Size
Package
Number
Marking
ESD516/LOT
Material Packing
Halogen Tape
&
per reel
Rating
2,500
PCS
13
inches
ESD516
TO-252
UL 94V-0
free
Reel
5. Pin
Configuration and Functions
Pin
1
Function
Gate
Outline
Circuit Diagram
2
D
3
Source
Drain
ESD516
LOT
G
2
S
1
3
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ESD516
Rev-1.1
6. Specification
Absolute Maximum Rating & Thermal Characteristics
Ratings at 25
℃
ambient temperature unless otherwise specified.
Parameter
Drain-Source Voltage
Symbol
BV
DSS
V
GS
Limit
30
Unit
V
Gate-Source Voltage
±20
65
V
T
C
=25°C
T
C
=75°C
T
C
=25°C
T
C
=75°C
Continuous Drain Current
I
D
A
50
42
Maximum Power Dissipation
P
D
W
25
Pulsed Drain Current
a
I
DM
I
AS
E
AS
T
J
260
32
A
A
Avalanche Current, Single Pulsed
b
Avalanche Energy, Single Pulsed
b
Operating Junction
T
e
mperature
Lead
T
e
mperature
mJ
°C
°C
°C
153
150
260
-55 to 150
T
L
Storage
T
e
mperature Range
T
stg
Thermal resistance ratings
Single Operation
Parameter
Symbol
R
θJ
C
Typical
3
Unit
Junction-to-Case Thermal Resistance
t ≤ 10 s
°C/W
Note:
a:
Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1%
b: Tj=25
℃
,V
DD
=30
V
,
V
G
=10
V
,
L
=0.3mH,Rg=25Ω
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ESD516
Rev-1.1
Electrical Characteristics
At TA = 25
℃
unless otherwise specified
Parameter
Symbol
Test Conditions
Min.
Typ.
Max. Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
ON CHARACTERISTICS
BV
DSS
I
DSS
V
GS
=0V, I
D
=250uA
V
DS
=30V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
30
V
1.0
uA
nA
I
GSS
±100
Gate Threshold Voltage
V
GS(TH)
R
DS(on)
g
FS
V
GS
=V
DS
, I
D
=250uA
V
GS
=10V, I
D
=20A
V
GS
=4.5V, I
D
=20A
V
DS
=5.0V, I
D
=20A
1.0
1.75
5
2.5
6.5
8.5
60
V
mΩ
S
Drain-to-source On-resistance
Forward Trans conductance
6
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
GS
1036
444
62
V
GS
=0V, f=1MHz,
V
DS
=25V
Output Capacitance
Reverse Transfer Capacitance
T
o
tal Gate Charge
pF
nC
15.8
3.3
V
GS
=10V, V
DS
=15V,
I
D
=20A
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Q
GD
3.6
t
d(ON)
5.5
3.3
18
t
r
t
d(OFF)
t
f
V
GS
=10V, V
DS
=15V,
R
G
=0.75
Ω
, R
G
=1.8
Ω
ns
V
Turn-Off Delay Time
Fall Time
4.3
BODY DIODE CHARACTERISTICS
Forward Voltage
V
SD
V
GS
=0V, I
S
=1.0A
0.75
1.5
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ESD516
Rev-1.1
7. Typical
Characteristic
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ESD516
Rev-1.1
8. Dimension
(TO-252)
BL
BW
TL
FT
Z
FL
LL
θ
LP
LW
COMMON DIMENSIONS: UNITS OF MEASURE=MILLIMETER
Dimensions
Dimensions
Symbol
Symbol
Min.
Max.
Min.
0.50
1.25
Max.
0.80
1.30
A
1.75
FL
LP
LL
LW
TL
Z
A1
A2
A3
BL
BW
FT
0.05
1.40
0.15
1.50
1.1 BSC
0.54
0.623 BSC
0.38
5.90
0.43
6.10
4.92
3.70
0.20
5.80
4.10
0.21
θ
0
°
8
°
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ESD516
Rev-1.1
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’s Terms of Sale or other applicable terms available either on www.elecsuper.com or
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