ElecSuper-ESN4486
| Part # | ElecSuper-ESN4486 |
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ESN4486
Rev-1.1
SuperMOS
–
PDFN3*3-8L 100V BV
DSS
,82m
Ω
R
DS(ON)
,10A I
D
N-channel MOSFET
1. Description
The ESN4486 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent R
DS(ON)
with low gate charge. Device is suitable for use in
DC-DC conversion, power switch and charging circuit. Standard Product ESN4486 is Pb-free.
2. Features
⚫
100V, R
DS(ON)
=82m
Ω
(Tpy), V
GS
=10V
⚫
⚫
⚫
⚫
Material: Halogen free
Reliable and rugged
Avalanche Rated
⚫
⚫
Use trench MOSFET technology
High density cell design for low R
DS(on)
Low leakage current
3. Applications
⚫
⚫
⚫
⚫
PWM applications
100% UIS TESTED!
Load switch
Power management in portable/desktop PCs
DC/DC conversion
4. Ordering
Information
Quantity Flammability
Reel
Size
13
Part Number
ESN4486
Package
Marking
Material Packing
Halogen Tape
&
per reel
5,000
PCS
Rating
PDFN3*3-
8L
ESN4486/lot
UL 94V-0
free
Reel
inches
5. Pin
Configuration and Functions
Pin
4
Function
Gate
Outline
Circuit Diagram
8
7
6
5
1/2/3
Drain
ESN4486
lot
5/6/7/8
Source
1
2
3
4
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ESN4486
Rev-1.1
6. Specification
Absolute Maximum Rating & Thermal Characteristics
Ratings at 25
℃
ambient temperature unless otherwise specified.
Parameter
Drain-Source Voltage
Symbol
BV
DSS
V
GS
Limit
100
±20
10
Unit
V
Gate-Source Voltage
V
T
C
=25°C
T
C
=75°C
T
C
=25°C
T
C
=75°C
Continuous Drain Current
I
D
A
8
20
Maximum Power Dissipation
P
D
W
12
Pulsed Drain Current
a
I
DM
IAS
EAS
T
J
40
A
A
Avalanche Current, Single Pulsed
b
Avalanche Energy, Single Pulsed
b
Operating Junction
T
e
mperature
Lead
T
e
mperature
12.5
23.4
150
260
-55 to 150
mJ
°C
°C
°C
T
L
Storage
T
e
mperature Range
T
stg
Thermal resistance ratings
Single Operation
Parameter
Symbol
R
θJA
Typical Maximum
Unit
Junction-to-Ambient Thermal Resistance
t ≤ 10 s
110
6.3
°C/W
Junction-to-Case Thermal Resistance
c
Steady State
R
θJC
Note:
a: Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1%
b: EAS condition
：
Tj=25
℃
,V
DD
=50
V
,
V
G
=10
V
,
L=0.3mH,Rg=25Ω
c:
Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
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ESN4486
Rev-1.1
Electrical Characteristics
At TA = 25
℃
unless otherwise specified
Parameter
Symbol
T
e
st Conditions
Min.
100
Typ.
Max. Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
BV
DSS
I
DSS
V
GS
=0V, I
D
=250uA
V
V
DS
=100V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
1
uA
nA
I
GSS
±100
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
R
DS(on)
g
FS
V
GS
=V
DS
, I
D
=250uA
1.0
1.8
82
90
3.0
122
142
40
V
mΩ
S
V
GS
=10V, I
D
=5A
V
GS
=4.5V, I
D
=3A
V
DS
=5.0V, I
D
=5A
Drain-to-source On-resistance
Forward Trans conductance
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
ISS
815
50
V
GS
=0V, f=1MHz, V
DS
Output Capacitance
C
OSS
pF
nC
=25V
Reverse Transfer Capacitance
T
o
tal Gate Charge
C
RSS
Q
G(TOT)
Q
GS
35
12
V
GS
=4.5V, V
DS
=50V,
I
D
=2A
Gate-to-Source Charge
Gate-to-Drain Charge
2.6
2.8
Q
GD
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
t
d(ON)
7
5
t
r
V
GS
=10V, V
DS
=50V,
ns
V
R
L
=1Ω, R
G
=3Ω
t
d(OFF)
Turn-Off Delay Time
Fall Time
18
8
t
f
BODY DIODE CHARACTERISTICS
Forward Voltage
V
SD
V
GS
=0V, I
S
=1A
0.7
1.2
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ESN4486
Rev-1.1
7. Typical
Characteristic
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ESN4486
Rev-1.1
8. Dimension
(PDFN3*3-8L)
b
D
D1
L3
L2
e
Unit: mm
COMMON DIMENSIONS: UNITS OF MEASURE=MILLIMETER
MILLIMETER
MILLIMETER
Typ.
SYMBOL
SYMBOL
MIN
Typ.
0.800
MAX
MIN
MAX
0.400
0.750
0.500
0.480
A
A1
A2
D
0.700
0.900
b
e
0.200
0.550
0.300
0.180
0.300
0.650
0.152 REF.
0~0.05
3.100
L
0.400
3.000
2.300
2.900
3.150
1.320
3.200
2.600
3.100
3.450
1.720
L1
L2
L3
H
0.330
D1
E
2.450
0~0.100
0~0.100
0.415
3.000
E1
E2
3.300
0.315
0.515
1.520
θ
8
°
10
°
12
°
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ESN4486
Rev-1.1
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