ElecSuper-ESN6435

Part #ElecSuper-ESN6435
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ElecSuper-ESN6435
ESN6435  
Rev-1.1  
SuperMOS – PDFN5X6-8L -30V BV

DSS

,13m
Ω
R

DS(on)

, -31A I

D

P-channel MOSFET  
1. Description  
The ESN6435 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench  
technology and design to provide excellent R

DS(ON)

with low gate charge. Device is suitable for use in  
DC-DC conversion, power switch and charging circuit. Standard Product ESN6435 is Pb-free.  
2. Features  
⚫
-30V, R

DS(ON)

=13m
Ω
(Typ), V

GS

=-10V  

R

=18m

=-4.5V  
Fast Switching  
⚫
⚫
⚫
⚫
Material: Halogen free  
Reliable and rugged  
Avalanche Rated  
⚫
⚫
High density cell design for low R

DS(on)  

Low leakage current  
3. Applications  
⚫
⚫
⚫
⚫
PWM applications  
100% UIS TESTED!  
Load switch  
Power management in portable/desktop PCs  
DC/DC conversion  
4. Ordering
 
Information  
Part Number  
ESN6435  
Package  
Marking  
Material  
Quantity per reel
 
Flammability Rating  
PDFN5X6-8L .ES6435/lot Halogen
 
free  
5,000 PCS  
UL 94V-0  
5. Pin
 
Configuration and Functions  
Pin  
4
Function  
Gate  
Outline  
Circuit Diagram  
8
7
6 5  
1/2/3  
5/6/7/8  
Source  
Drain  
ES6435  
lot  
1
2
3
4
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ESN6435  
Rev-1.1  
6. Specification  
Absolute Maximum Rating & Thermal Characteristics  
Ratings at 25
 
℃
ambient temperature unless otherwise specified.  
Parameter  
Drain-Source Voltage  
Symbol  
BV

DSS  

V

GS  

Limit  
-30  
Unit  
V
Gate-Source Voltage  
±25  
V
T

C

=25°C  
T

C

=75°C  
T

C

=25°C  
T

C

=75°C  
-31  
Continuous Drain Current  
I

D  

A
-24  
31.3  
18.8  
-120  
22  
Maximum Power Dissipation  
P

D  

W
Pulsed Drain Current

a  

I

DM  

I

AS  

A
A
Avalanche Current, Single Pulsed

b  

Avalanche Energy, Single Pulsed

b  

Operating Junction
T
e
mperature  
Storage
T
e
mperature Range  
E

AS  

T

J  

72.6  
150  
mJ  
°C  
°C  
T

stg  

-55 to +150  
Thermal resistance ratings  
Single Operation  
Parameter  
Symbol  
R

θJA  

Typical  
40  
Unit  
Junction-to-Ambient Thermal Resistance  
Junction-to-Case Thermal Resistance  
t ≤ 10 s  
Steady State  
°C/W  
R

θJC  

4.0  
Note:  
a: Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1%  
b: EAS condition
:
Tj=25
℃
,V

DD

=-30
V
,
V

G

=-10
V
,
L=0.3mH,Rg=25Ω  
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ESN6435  
Rev-1.1  
Electrical Characteristics  
At TA = 25
℃
unless otherwise specified  
Parameter  
Symbol  
T
e
st Conditions  
Min.  
-30  
Typ.  
Max. Unit  
OFF CHARACTERISTICS  
Drain-to-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-to-source Leakage Current  
BV

DSS  

I

DSS  

V

GS

=0V, I

D

=-250uA  
V
V

GS

=0V, V

DS

=-30V  
V

GS

=±25V, V

DS

=0V  
-1  
uA  
nA  
I

GSS  

±100  
ON CHARACTERISTICS  
V

GS(TH)

V

GS

=V

DS

, I

D

=-250uA  
Gate Threshold Voltage  
-1.0  
-1.5  
13  
-2.0  
21  
V
V

GS

=-10V, I

D

=-20A  
V

GS

=-4.5V, I

D

=-15A  
Drain-to-source On-resistance  
R

DS(on)  

mΩ  
18  
27  
CHARGES, CAPACITANCES AND GATE RESISTANCE  
C

ISS  

Input Capacitance  
1150  
260  
145  
24  
V

GS

=0V, V

DS

=-15V,  
Output Capacitance  
C

OSS  

pF  
nC  
f=1MHz  
Reverse Transfer Capacitance  
T
o
tal Gate Charge  
C

RSS  

Q

G(TOT)  

Q

GS  

V

GS

=-10V, V

DS

=-15V,  
I

D

=-20A  
Gate-to-Source Charge  
Gate-to-Drain Charge  
6
Q

GD  

6.3  
SWITCHING CHARACTERISTICS  
t

d(ON)  

Turn-On Delay Time  
Rise Time  
10  
10  
15  
10  
t

r  

V

GS

=-10V, V

DS

=-15V,  
ns  
V
R

L

=1Ω, R

G

=3Ω  
t

d(OFF)  

Turn-Off Delay Time  
Fall Time  
t

f  

BODY DIODE CHARACTERISTICS  
Forward Voltage  
V

SD  

V

GS

=0V, I

SD

=-10A  
-1.2  
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ESN6435  
Rev-1.1  
7. Typical
 
Characteristic  
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ESN6435  
Rev-1.1  
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ESN6435  
Rev-1.1  
8. Dimension
 
(PDFN5x6-8L)  
D2  
D
b
D1  
R
e
Unit: mm  
COMMON DIMENSIONS: UNITS OF MEASURE=MILLIMETER  
MILLIMETER  
MILLIMETER  
Typ.  
SYMBOL  
SYMBOL  
MIN  
Typ.  
1.000  
MAX  
MIN  
MAX  
A
A1  
A2  
D
0.900  
1.100  
e
l
1.270 TYP.  
0.610  
0.254 REF  
0~0.05  
4.900  
0.534  
0.424  
0.686  
0.576  
L1  
L2  
k
0.500  
4.824  
3.910  
4.924  
5.924  
3.375  
5.674  
0.350  
4.976  
4.110  
5.076  
6.076  
3.575  
5.826  
0.450  
1.800 REF.  
1.290  
D1  
D2  
E
4.010  
1.190  
0.549  
8°  
1.390  
0.701  
12°  
5.000  
H
θ
0.625  
6.000  
10°  
E1  
E2  
b
3.475  
R
d
1.100  
1.200  
1.300  
0.100  
5.750  
0.400  
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ESN6435  
Rev-1.1  
DISCLAIMER  
ELECSUPER PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES  
(INCLUDING REFERENCE DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, SAFETY INFORMATION, AND OTHER  
RESOURCES “AS IS” AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES,
EXPRESS AND IMPLIED, INCLUDING  
WITHOUT LIMITATION ANY IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE  
OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS.  
These resources are intended for skilled developers designing with ElecSuper products. You are solely responsible for  
(1) selecting the appropriate ElecSuper products for your application;  
(2) designing, validating and testing your application;  
(3) ensuring your application meets applicable standards, and any other safety, security, or other requirements.  
These resources are subject to change without notice. ElecSuper grants you permission to use these resources only for  
development of an application that uses the ElecSuper products described in the resource. Other reproduction and display of  
these resources are prohibited. No license is granted to any other ElecSuper intellectual property right or to any third party  
intellectual property right. ElecSuper disclaims responsibility for, and you will fully indemnify ElecSuper and its representatives  
against, any claims, damages, costs, losses, and liabilities arising out of your use of these resources. ElecSuper
’s products  
provided in conjunction with such ElecSuper products. ElecSuper
’s provision of these re
sources does not expand or otherwise  
alter ElecSuper
’s applicable warranties or warranty disclaimers for
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