ElecSuper-ESN6586
| Part # | ElecSuper-ESN6586 |
Download  | ElecSuper-ESN6586 |
ESN6586
Rev-1.1
SuperMOS
–
PDFN5*6-8L 30V BV
DSS
7m
Ω
R
DS(on)
43A I
D
, N-channel MOSFET
1. Description
The ESN6586 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent R
DS(ON)
with low gate charge. Device is suitable for use in
DC-DC conversion, power switch and charging circuit. Standard Product ESN6586 is Pb-free.
2. Features
⚫
30V, R
DS(ON)
=7
mΩ
(Typ), V
GS
=10V
Use trench MOSFET technology
High density cell design for low R
DS(on)
⚫
⚫
⚫
⚫
Material: Halogen free
Reliable and rugged
Avalanche Rated
⚫
⚫
Low leakage current
3. Applications
⚫
⚫
⚫
⚫
PWM applications
100% UIS TESTED!
Load switch
Power management in portable/desktop PCs
DC/DC conversion
4. Ordering
Information
Part
Quantity
per reel
5,000
Flammability
Reel
Size
13
Package
Marking
ESN6586/lot
Material
Packing
Number
Rating
PDFN5*6-
8L
Halogen
free
Tape &
Reel
ESN6586
UL 94V-0
PCS
inches
5. Pin
Configuration and Functions
Pin
4
Function
Gate
Outline
Circuit Diagram
8
7
6 5
D
1/2/3
Source
Drain
ESN6586
lot
G
S
5/6/7/8
1
2
3
4
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ESN6586
Rev-1.1
6. Specification
Absolute Maximum Rating & Thermal Characteristics
Ratings at 25
℃
ambient temperature unless otherwise specified.
Parameter
Drain-Source Voltage
Symbol
BV
DSS
V
GS
Limit
30
Unit
V
Gate-Source Voltage
±20
43
V
T
C
=25°C
T
C
=75°C
T
C
=25°C
T
C
=75°C
Continuous Drain Current
I
D
A
33
42
Maximum Power Dissipation
P
D
W
25
Pulsed Drain Current
a
I
DM
I
AS
E
AS
T
J
150
20
A
A
Avalanche Current, Single Pulsed
b
Avalanche Energy, Single Pulsed
b
Operating Junction
T
e
mperature
Lead
T
e
mperature
60
mJ
°C
°C
°C
150
260
-55 to 150
T
L
Storage
T
e
mperature Range
T
stg
Thermal resistance ratings
Single Operation
Parameter
Symbol
R
θJA
Typical
Unit
Junction-to-Ambient Thermal Resistance
Junction-to-Case Thermal Resistance
t ≤ 10 s
Steady State
40
3
°C/W
R
θJC
Note:
a: Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1%
b: EAS condition
：
Tj=25
℃
,V
DD
=30
V
,
V
G
=10
V
,
L=0.3mH,Rg=25Ω
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ESN6586
Rev-1.1
Electrical Characteristics
At TA = 25
℃
unless otherwise specified
Parameter
Symbol
Test Conditions
Min.
Typ.
Max. Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
BV
DSS
I
DSS
V
GS
=0V, I
D
=250uA
30
V
V
DS
=30V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
1.0
uA
nA
I
GSS
±100
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
R
DS(on)
g
FS
V
GS
=V
DS
, I
D
=250uA
1.0
1.4
7
1.8
12
V
mΩ
S
V
GS
=10V, I
D
=20A
V
GS
=4.5V, I
D
=20A
V
DS
=5.0V, I
D
=20A
Drain-to-source On-resistance
10.5
18
Forward Trans conductance
100
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
ISS
1150
180
105
20
V
GS
=0V, f=1MHz, V
DS
Output Capacitance
C
OSS
pF
nC
=15V
Reverse Transfer Capacitance
T
o
tal Gate Charge
C
RSS
Q
G(TOT)
Q
GS
V
GS
=4.5V, V
DS
=15V,
I
D
=20A
Gate-to-Source Charge
Gate-to-Drain Charge
2.8
5
Q
GD
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
t
d(ON)
6.6
2
t
r
t
d(OFF)
t
f
V
GS
=10V, V
DS
=20V,
R
L
=0.75Ω, R
G
=6Ω
ns
V
Turn-Off Delay Time
Fall Time
18
3.3
BODY DIODE CHARACTERISTICS
V
SD
V
GS
=0V, I
S
=1.9A
Forward Voltage
0.7
1.5
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ESN6586
Rev-1.1
7. Typical
Characteristic
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ESN6586
Rev-1.1
8. Dimension
(PDFN5*6-8L)
D2
D
b
D1
R
e
Unit: mm
COMMON DIMENSIONS: UNITS OF MEASURE=MILLIMETER
MILLIMETER
MILLIMETER
Typ.
SYMBOL
SYMBOL
MIN
Typ.
1.000
MAX
MIN
MAX
A
A1
A2
D
0.900
1.100
e
l
1.270 TYP.
0.610
0.254 REF
0~0.05
4.900
0.534
0.424
0.686
0.576
L1
L2
k
0.500
4.824
3.910
4.924
5.924
3.375
5.674
0.350
4.976
4.110
5.076
6.076
3.575
5.826
0.450
1.800 REF.
1.290
D1
D2
E
4.010
1.190
0.549
8°
1.390
0.701
12°
5.000
H
θ
0.625
6.000
10°
E1
E2
b
3.475
R
d
1.100
1.200
1.300
0.100
5.750
0.400
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ESN6586
Rev-1.1
DISCLAIMER
ELECSUPER PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES
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WITHOUT LIMITATION ANY IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE
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These resources are intended for skilled developers designing with ElecSuper products. You are solely responsible for
(1) selecting the appropriate ElecSuper products for your application;
(2) designing, validating and testing your application;
(3) ensuring your application meets applicable standards, and any other safety, security, or other requirements.
These resources are subject to change without notice. ElecSuper grants you permission to use these resources only for
development of an application that uses the ElecSuper products described in the resource. Other reproduction and display of
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’s products
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’s Terms of Sale or other applicable terms available either on www.elecsuper.com
or
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