ElecSuper-ESN7414
| Part # | ElecSuper-ESN7414 |
Download  | ElecSuper-ESN7414 |
ESN7414
Rev-1.1
SuperMOS
–
PDFN3*3-8L 30V BV
DSS
10m
Ω
R
DS(on)
23A I
D
, N-channel MOSFET
1. Description
The ESN7414 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent R
DS(ON)
with low gate charge. Device is suitable for use in
DC-DC conversion, power switch and charging circuit. Standard Product ESN7414 is Pb-free.
2. Features
⚫
30V, R
DS(ON)
=10
mΩ
(Typ), V
GS
=10V
Use trench MOSFET technology
High density cell design for low R
DS(on)
⚫
⚫
⚫
⚫
Material: Halogen free
Reliable and rugged
Avalanche Rated
⚫
⚫
Low leakage current
3. Applications
⚫
⚫
⚫
⚫
PWM applications
100% UIS TESTED
Load switch
Power management in portable/desktop PCs
DC/DC conversion
4. Ordering
Information
Part
Quantity
per reel
Flammability
Reel
Size
13
Package
Marking
ESN7414/lot
Material
Packing
Number
Rating
PDFN3*3-
8L
Halogen
free
Tape &
Reel
ESN7414
5,000 PCS
UL 94V-0
inches
Table-1 Ordering
information
5. Pin
Configuration and Functions
Pin
Function
Source
Outline
Circuit Diagram
8
7
6
5
1/2/3
4
Gate
Drain
ESN7414
lot
5/6/7/8
1
2
3
4
Table-2 Pin
configuration
Copyright© ElecSuper Incorporated
Contact Us
1
/
7
ESN7414
Rev-1.1
6. Specification
Absolute Maximum Rating & Thermal Characteristics
Ratings at 25
℃
ambient temperature unless otherwise specified.
Parameter
Drain-Source Voltage
Symbol
BV
DSS
V
GS
Limit
30
Unit
V
Gate-Source Voltage
±20
V
T
C
=25°C
T
C
=75°C
T
C
=25°C
T
C
=75°C
23
Continuous Drain Current
I
D
A
18
15.7
9.4
Maximum Power Dissipation
P
D
W
Pulsed Drain Current
I
DM
I
AS
E
AS
T
J
80
A
A
Avalanche Current, Single Pulsed
a
Avalanche Energy, Single Pulsed
a
Operating Junction
T
e
mperature
Lead
T
e
mperature
15.5
36
mJ
°C
°C
°C
150
T
L
260
Storage
T
e
mperature Range
T
stg
-55 to 150
Thermal resistance ratings
Single Operation
t ≤ 10 s
Parameter
Symbol
R
θJC
Typical Maximum
8
Unit
Junction-to-Case Thermal Resistance
°C/W
Note
：
a: EAS condition
：
Tj=25
℃
,V
DD
=30
V
,
V
G
=10
V
,
L=0.3mH,Rg=25Ω
Copyright© ElecSuper Incorporated
Contact Us
2
/
7
ESN7414
Rev-1.1
Electrical Characteristics
At TA = 25
℃
unless otherwise specified
Parameter
Symbol
Test Conditions
Min.
Typ.
Max. Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
BV
DSS
I
DSS
V
GS
=0V, I
D
=250uA
30
V
V
DS
=30V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
1.0
uA
nA
I
GSS
±100
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
R
DS(on)
g
FS
V
GS
=V
DS
, I
D
=250uA
1.0
1.5
10
2.4
19
26
50
V
mΩ
S
V
GS
=10V, I
D
=10A
V
GS
=4.5V, I
D
=8A
V
DS
=5.0V, I
D
=10A
Drain-to-source On-resistance
13.5
Forward Trans conductance
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
ISS
600
100
70
V
GS
=0V, f=1MHz, V
DS
Output Capacitance
C
OSS
pF
nC
=15V
Reverse Transfer Capacitance
T
o
tal Gate Charge
C
RSS
Q
G(TOT)
Q
GS
14
V
GS
=10V, V
DS
=15V,
I
D
=10A
Gate-to-Source Charge
Gate-to-Drain Charge
1.8
4
Q
GD
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
t
d(ON)
5
t
r
t
d(OFF)
t
f
3.5
22
4.5
V
GS
=10V, V
DS
=15V,
R
L
=1.5Ω, R
GEN
=3Ω
ns
V
Turn-Off Delay Time
Fall Time
BODY DIODE CHARACTERISTICS
V
SD
V
GS
=0V, I
S
=1.0A
Forward Voltage
0.45
1.2
Copyright© ElecSuper Incorporated
Contact Us
3
/
7
ESN7414
Rev-1.1
7. Typical
Characteristic
Copyright© ElecSuper Incorporated
Contact Us
4
/
7
ESN7414
Rev-1.1
8. Dimension
(PDFN3*3-8L)
D
b
D1
L3
L2
e
COMMON DIMENSIONS: UNITS OF MEASURE=MILLIMETER
MILLIMETER
MILLIMETER
Typ.
SYMBOL
SYMBOL
MIN
Typ.
0.800
MAX
MIN
MAX
0.400
0.750
0.500
0.480
A
A1
A2
D
0.700
0.900
b
e
0.200
0.550
0.300
0.180
0.300
0.650
0.152 REF.
0~0.05
3.100
L
0.400
3.000
2.300
2.900
3.150
1.320
3.200
2.600
3.100
3.450
1.720
L1
L2
L3
H
0.330
D1
E
2.450
0~0.100
0~0.100
0.415
3.000
E1
E2
3.300
0.315
0.515
1.520
θ
8
°
10
°
12
°
Copyright© ElecSuper Incorporated
Contact Us
6
/
7
ESN7414
Rev-1.1
DISCLAIMER
ELECSUPER PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES
(INCLUDING REFERENCE DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, SAFETY INFORMATION, AND OTHER
RESOURCES “AS IS” AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES,
EXPRESS AND IMPLIED, INCLUDING
WITHOUT LIMITATION ANY IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE
OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS.
These resources are intended for skilled developers designing with ElecSuper products. You are solely responsible for
(1) selecting the appropriate ElecSuper products for your application;
(2) designing, validating and testing your application;
(3) ensuring your application meets applicable standards, and any other safety, security, or other requirements.
These resources are subject to change without notice. ElecSuper grants you permission to use these resources only for
development of an application that uses the ElecSuper products described in the resource. Other reproduction and display of
these resources are prohibited. No license is granted to any other ElecSuper intellectual property right or to any third party
intellectual property right. ElecSuper disclaims responsibility for, and you will fully indemnify ElecSuper and its representatives
against, any claims, damages, costs, losses, and liabilities arising out of your use of these resources. ElecSuper
’s products
are provided subject to ElecSuper
’s Terms of Sale or other applicable terms available either on www.elecsuper.com or
provided in conjunction with such ElecSuper products. ElecSuper
’s provision of these resources does not expand or otherwise
alter ElecSuper
’s applicable warranties or
warranty disclaimers for ElecSuper products.
Copyright© ElecSuper Incorporated
Contact Us
7
/
7
