ElecSuper-ESN7466
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ESN7466
Rev-1.1
SuperMOS
–
PDFN3X3-8L 30V BV
DSS
6.5m
Ω
R
DS(on)
40A I
D
, N-channel MOSFET
1. Description
The ESN7466 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent R
DS(ON)
with low gate charge. Device is suitable for use in
DC-DC conversion, power switch and charging circuit. Standard Product ESN7466 is Pb-free.
2. Features
⚫
30V, R
DS(ON)
=6.5
mΩ
(Typ), V
GS
=10V
Use trench MOSFET technology
High density cell design for low R
DS(on)
⚫
⚫
⚫
⚫
Material: Halogen free
Reliable and rugged
Avalanche Rated
⚫
⚫
Low leakage current
3. Applications
⚫
⚫
PWM applications
Load switch
⚫
⚫
Power management in portable/desktop PCs
DC/DC conversion
4. Ordering
Information
Quantity Flammability
Part Number
ESN7466
Package
Marking
Material
Packing
Reel Size
13 inches
per reel
5,000
PCS
Rating
Halogen
free
Tape &
Reel
PDFN3X3-8L .ESN7466/lot
UL 94V-0
Table-1 Ordering
information
5. Pin
Configuration and Functions
Pin
4
Function
Gate
Outline
Circuit Diagram
8
7 6 5
D
ESN7466/LOT
1/2/3
5/6/7/8
Source
Drain
G
S
1
2 3 4
Table-2 Pin
configuration
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ESN7466
Rev-1.1
6. Specification
Absolute Maximum Rating & Thermal Characteristics
Ratings at 25
℃
ambient temperature unless otherwise specified.
Parameter
Drain-Source Voltage
Symbol
BV
DSS
V
GS
Limit
30
Unit
V
Gate-Source Voltage
±20
V
T
C
=25°C
T
C
=75°C
T
C
=25°C
T
C
=75°C
40
Continuous Drain Current
I
D
A
31
30
Maximum Power Dissipation
P
D
W
18
Pulsed Drain Current
a
I
DM
T
J
160
150
260
-55 to 150
A
Operating Junction
T
e
mperature
Lead
T
e
mperature
°C
°C
°C
T
L
Storage
T
e
mperature Range
T
stg
Thermal resistance ratings
Single Operation
Parameter
Symbol
R
θJA
Typical
40
Unit
Junction-to-Ambient Thermal Resistance
Junction-to-Case Thermal Resistance
t ≤ 10 s
Steady State
°C/W
R
θJC
4.2
Note:
a: Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1%
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ESN7466
Rev-1.1
Electrical Characteristics
At TA = 25
℃
unless otherwise specified
Parameter
Symbol
Test Conditions
Min.
Typ.
Max. Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
BV
DSS
I
DSS
V
GS
=0V, I
D
=250uA
30
V
V
DS
=30V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
1.0
uA
nA
I
GSS
±100
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
R
DS(on)
g
FS
V
GS
=V
DS
, I
D
=250uA
1.0
1.35
6.5
10
1.8
12
18
40
V
mΩ
S
V
GS
=10V, I
D
=18A
V
GS
=4.5V, I
D
=15A
V
DS
=5.0V, I
D
=18A
Drain-to-source On-resistance
Forward Trans conductance
19
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
ISS
876
155
140
11
V
GS
=0V, f=1MHz, V
DS
Output Capacitance
C
OSS
pF
nC
=15V
Reverse Transfer Capacitance
T
o
tal Gate Charge
C
RSS
Q
G(TOT)
Q
GS
V
GS
=4.5V, V
DS
=15V,
I
D
=6A
Gate-to-Source Charge
Gate-to-Drain Charge
2.7
5.1
Q
GD
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
t
d(ON)
4.7
35
35
15
t
r
t
d(OFF)
t
f
V
GS
=10V, V
DS
=20V,
I
D
=6A, R
G
=6Ω
ns
V
Turn-Off Delay Time
Fall Time
BODY DIODE CHARACTERISTICS
V
SD
V
GS
=0V, I
S
=1.9A
Forward Voltage
0.7
1.5
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ESN7466
Rev-1.1
7. Typical
Characteristic
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ESN7466
Rev-1.1
8. Dimension
(PDFN3X3-8L)
b
D
D1
L3
L2
e
Unit: mm
COMMON DIMENSIONS: UNITS OF MEASURE=MILLIMETER
MILLIMETER
MILLIMETER
Typ.
SYMBOL
SYMBOL
MIN
Typ.
0.800
MAX
MIN
MAX
0.400
0.750
0.500
0.480
A
A1
A2
D
0.700
0.900
b
e
0.200
0.550
0.300
0.180
0.300
0.650
0.152 REF.
0~0.05
3.100
L
0.400
3.000
2.300
2.900
3.150
1.320
3.200
2.600
3.100
3.450
1.720
L1
L2
L3
H
0.330
D1
E
2.450
0~0.100
0~0.100
0.415
3.000
E1
E2
3.300
0.315
0.515
1.520
θ
8
°
10
°
12
°
Table-5 Product
dimensions in millimeter
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ESN7466
Rev-1.1
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’s Terms of Sale or other applicable terms available either on www.e
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