ElecSuper-LN2302LT1G-ES
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LN2302LT1G-ES
Rev-1.1
SuperMOS – SOT-23 20V BV
DSS
,36mΩ R
DS(on)
,3.5A I
D
, N-channel MOSFET
1. Description
The LN2302LT1G-ES is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent R
DS(ON)
with low gate charge. Device is suitable for use in
DC-DC conversion, power switch and charging circuit. Standard Product LN2302LT1G-ES is Pb-free.
2. Features
20V, R
DS(ON)
=36mΩ(Typ), V
GS
=4.5V
Material: Halogen free
Reliable and rugged
Avalanche Rated
Use trench MOSFET technology
High density cell design for low R
DS(on)
Low leakage current
3. Applications
PWM applications
Load switch
Power management in portable/desktop PCs
DC/DC conversion
4. Ordering
Information
Quantity
per reel
3,000
Flammability
Rating
Part Number
Package
SOT-23
Marking
2302
Material
Packing
Reel Size
7 inches
LN2302LT1G-E
S
Halogen
free
Tape &
Reel
UL 94V-0
PCS
Table-1 Ordering
information
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LN2302LT1G-ES
Rev-1.1
5. Pin
Configuration and Functions
Pin
1
Function
Gate
Outline
Circuit Diagram
D
3
3
2
Source
Drain
2302
1
1
2
2
G
S
3
Table-2 Pin
configuration
6. Specification
Absolute Maximum Rating & Thermal Characteristics
Ratings at 25
℃
ambient temperature unless otherwise specified.
Parameter
Drain-Source Voltage
Symbol
BV
DSS
V
GS
I
D
Limit
20
Unit
V
Gate-Source Voltage
±10
3.5
V
Continuous Drain Current
Maximum Power Dissipation
Pulsed Drain Current
a
A
P
D
0.4
W
A
I
DM
14
Operating Junction
T
emperature
Lead
T
emperature
T
J
150
260
°C
°C
°C
T
L
Storage
T
emperature Range
T
stg
-55 to 150
Thermal resistance ratings
Single Operation
t ≤ 10 s
Parameter
Symbol
R
θJA
Typical
Maximum
312.5
Unit
Junction-to-Ambient Thermal Resistance
Note:
°C/W
a: Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1%
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LN2302LT1G-ES
Rev-1.1
Electrical Characteristics
At TA = 25
℃
unless otherwise specified
Parameter
Symbol
Test Conditions
Min.
Typ.
Max. Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
ON CHARACTERISTICS
BV
DSS
I
DSS
V
GS
=0V, I
D
=250uA
V
DS
=20V, V
GS
=0V
V
DS
=0V, V
GS
=±10V
20
V
1
uA
nA
I
GSS
±100
Gate Threshold Voltage
V
GS(TH)
R
DS(on)
g
FS
V
GS
=V
DS
, I
D
=250uA
V
GS
=4.5V, I
D
=3.5A
V
GS
=2.5V, I
D
=2.0A
V
DS
=5.0V, I
D
=3.5A
0.45
0.7
36.0
47.0
7.8
1.1
V
mΩ
S
55.0
85.0
Drain-to-source On-resistance
Forward Trans conductance
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
GS
311
125
88
V
GS
=0V, f=1MHz, V
DS
=10V
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
pF
nC
4.1
10.5
V
GS
=4.5V, V
DS
=10V,
I
D
=3.5A
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
0.68
1.55
Q
GD
t
d(ON)
7.2
15
80
62
25
t
r
t
d(OFF)
t
f
58.0
15.8
10.6
V
GS
=4.5V, V
DS
=10V,
R
L
=55Ω, R
G
=6Ω
ns
V
Turn-Off Delay Time
Fall Time
BODY DIODE CHARACTERISTICS
Forward Voltage
V
SD
V
GS
=0V, I
S
=1.0A
0.75
1.25
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LN2302LT1G-ES
Rev-1.1
7. Typical
Characteristic
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LN2302LT1G-ES
Rev-1.1
8. Dimension
(SOT-23)
θ
D
b
L1
3
E1
E
1
2
L
e
C
e1
A1
A
Unit: mm
Dimensions
Dimensions
Symbol
Symbol
Min.
Max.
1.150
1.050
0.500
0.150
3.00
Min.
Max.
A
A1
b
0.900
0.900
0.300
0.080
2.800
1.200
E1
e
2.250
2.550
0.950TYP
0.550REF
e1
L
1.800
2.000
c
D
E
L1
θ
0.300
0.500
1.400
0
°
8
°
Table-5 Product
dimensions in millimeter
0.60
0.80
Note:
2.02
1. Controlling
dimension: in millimeters
2. General
tolerance:
±
0.05mm
3. The
pad layout is for reference only
Unit: mm
1.90
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LN2302LT1G-ES
Rev-1.1
DISCLAIMER
ELECSUPER PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES
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INCLUDING WITHOUT LIMITATION ANY IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR
PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS.
These resources are intended for skilled developers designing with ElecSuper products. You are solely responsible for
(1) selecting the appropriate ElecSuper products for your application;
(2) designing, validating and testing your application;
(3) ensuring your application meets applicable standards, and any other safety, security, or other requirements.
These resources are subject to change without notice. ElecSuper grants you permission to use these resources only for
development of an application that uses the ElecSuper products described in the resource. Other reproduction and display of
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