ElecSuper-MMBT2907A

Part #ElecSuper-MMBT2907A
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ElecSuper-MMBT2907A
MMBT2907A  
Rev-1.1  
SuperTransistor
–
V

CBO

-60V, I

C

-600mA SOT-23 Plastic-Encapsulate PNP Transistors  
1. Features  
2. Mechanical
 
Data  
⚫
⚫
⚫
Complementary to MMBT2222A  
Power dissipation of 250mW  
High stability and high reliability  
⚫
⚫
⚫
SOT-23 Small Outline Plastic Package  
Epoxy UL: 94V-0  
Mounting Position: Any  
3. Pin
 
configuration  
Pin  
1
Function  
Base  
Outline  
3
2
Emitter  
2F  
1
2
3
Collector  
4. Specification  
Absolute Maximum Rating & Thermal Characteristics  
Ratings at 25
 
℃
ambient temperature unless otherwise specified.  
Parameters  
Symbol  
V

CBO  

V

CEO  

V

EBO  

I

C  

Value  
-60  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-60  
V
-5  
V
Collector Current-Continuous  
Collector Power Dissipation  
Junction Temperature  
-600  
250  
150  
mA  
mW  
℃
P

C  

T

j  

Storage Temperature  
T

STG  

R

θJA  

-55~150  
500  
℃
Thermal resistance from junction to ambient  
℃
/W  
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MMBT2907A  
Rev-1.1  
Electrical Characteristics(
At TA = 25
℃
unless otherwise specified)  
Limits  
Parameters  
Symbols  
Test Condition  
Min  
-60  
-60  
-5  
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
V

(BR)CBO  

V

(BR)CEO  

V

(BR)EBO  

I

CEX  

I

C

=-100uA, I

E

=0  
I

C

=-1mA, I

B

=0  
V
I

E

=-10uA, I

C

=0  
V
V

CE

=-30V, V

EB

(off)=-0.5V  
V

CB

=-50V, I

E

=0  
-50  
-20  
-10  
Collector cut-off current  
Emitter cut-off current  
nA  
nA  
I

CBO  

I

EBO  

V

EB

=-3V, I

C

=0  
h

FE1  

V

CE

=-10V, I

C

=-0.1mA  
V

CE

=-10V, I

C

=-1mA  
V

CE

=-10V, I

C

=-10mA  
V

CE

=-10V, I

C

=-150mA  
V

CE

=-10V, I

C

=-500mA  
I

C

=-150mA, I

B

=-15mA  
I

C

=-500mA, I

B

=-50mA  
I

C

=-150mA, I

B

=-15mA  
I

C

=-500mA, I

B

=-50mA  
V

CE

=-20V, I

C

=-50mA, f=100MHz  
75  
100  
100  
100  
50  
h

FE2  

DC current gain  
h

FE3  

h

FE4  

300  
h

FE5  

-0.40  
-1.60  
-1.30  
-2.60  
V
V
Collector-emitter saturation voltage  
Base -emitter saturation voltage  
V

CE(sat)  

*
V
V

BE(sat)  

*
V
Transition frequency  
Delay time  
f

T  

t

d  

t

r  

200  
MHz  
10  
25  
ns  
ns  
V

CE

=-30V, I

C

=-150mA,  
I

B1

=-15mA  
Rise time  
ns  
ns  
Storage time  
Fall time  
t

s  

t

f  

225  
60  
V

CE

=-6V, I

C

=-150mA,  
I

B1

=I

B2

=-15mA  
*
Pulse test: pulse width
≤
300us
,
duty cycle
≤
2.0%  
Classification of h

FE(1)  

hFE  
Rank  
Range  
100~300  
L
H
100~200  
200~300  
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MMBT2907A  
Rev-1.1  
5. Typical
 
Characteristic  
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MMBT2907A  
Rev-1.1  
6. Dimension
 
and Patterns (SOT-23)  
θ
D
b
L1  
L
3
E1  
E
1
2
e
C
e1  
A1  
A
Units: mm  
Dimensions  
Dimensions  
Symbol  
Symbol  
Min.  
Max.  
1.150  
1.050  
0.500  
0.150  
3.00  
Min.  
Max.  
A
A1  
b
0.900  
0.900  
0.300  
0.080  
2.800  
1.200  
E1  
e
2.250  
1.800  
2.550  
0.950TYP  
0.550REF  
e1  
L
2.000  
c
D
E
L1  
θ
0.300  
0.500  
1.400  
0
°  
8
°  
0.60  
0.80  
Note:  
1. Controlling
 
dimension: in millimeters  
2. General
 
tolerance:
±
0.05mm  
3. The
 
pad layout is for reference only  
4. Unit:
 
mm  
2.02  
1.90  
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MMBT2907A  
Rev-1.1  
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’s products are  
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’s applicable warranties or warranty
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