ElecSuper-SI2300
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SI2300
Rev-1.1
SuperMOS – SOT-23 20V BV
DSS
,23mΩ R
DS(on)
,6.0A I
D
, N-channel MOSFET
1. Description
The SI2300 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology
and design to provide excellent R
DS(ON)
with low gate charge. Device is suitable for use in DC-DC
conversion, power switch and charging circuit. Standard Product SI2300 is Pb-free.
2. Features
20V, R
DS(ON)
=23.0mΩ(Typ), V
GS
=4.5V
Use trench MOSFET technology
High density cell design for low R
DS(on)
Material: Halogen free
Reliable and rugged
Avalanche Rated
Low leakage current
3. Applications
PWM applications
Load switch
Power management in portable/desktop PCs
DC/DC conversion
4. Ordering
Information
Quantity
per reel
Flammability
Rating
Part Number
SI2300
Package
SOT-23
Material
Packing
Reel Size
7 inches
Halogen
free
Tape &
Reel
3,000 PCS
UL 94V-0
Table-1 Ordering
information
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SI2300
Rev-1.1
5. Pin
Configuration and Functions
Pin
1
Function
Gate
Outline
Circuit Diagram
D
3
3
2
Source
Drain
1
2
G
S
1
2
3
Table-2 Pin
configuration
6. Specification
Absolute Maximum Rating & Thermal Characteristics
Ratings at 25
℃
ambient temperature unless otherwise specified.
Parameter
Drain-Source Voltage
Symbol
BV
DSS
V
GS
I
D
Limit
20
Unit
V
Gate-Source Voltage
±10
6.0
V
Continuous Drain Current
Maximum Power Dissipation
Pulsed Drain Current
a
A
P
D
0.4
W
A
I
DM
11.2
150
260
Operating Junction
T
emperature
Lead
T
emperature
T
J
°C
°C
°C
T
L
Storage
T
emperature Range
T
stg
-55 to 150
Thermal resistance ratings
Single Operation
t ≤ 10 s
Parameter
Symbol
R
θJA
Typical
Maximum
312.5
Unit
Junction-to-Ambient Thermal Resistance
Note:
°C/W
a: Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1%
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SI2300
Rev-1.1
Electrical Characteristics
At TA = 25
℃
unless otherwise specified
Parameter
Symbol
Test Conditions
Min.
Typ.
Max. Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
ON CHARACTERISTICS
BV
DSS
I
DSS
V
GS
=0V, I
D
=250uA
V
DS
=20V, V
GS
=0V
V
DS
=0V, V
GS
=±10V
20
V
1
uA
nA
I
GSS
±100
Gate Threshold Voltage
V
GS(TH)
R
DS(on)
g
FS
V
GS
=V
DS
, I
D
=250uA
V
GS
=4.5V, I
D
=4.0A
V
GS
=2.5V, I
D
=3.0A
V
DS
=5.0V, I
D
=2.8A
0.45
0.7
1.1
33.0
45.0
40
V
mΩ
S
23.0
30.5
Drain-to-source On-resistance
Forward Trans conductance
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
GS
311
125
88
V
GS
=0V, f=1MHz, V
DS
=10V
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
pF
nC
4.1
10.5
V
GS
=4.5V, V
DS
=10V,
I
D
=2.8A
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
0.68
1.55
Q
GD
t
d(ON)
7.2
15
80
62
25
t
r
t
d(OFF)
t
f
58.0
15.8
10.6
V
GS
=4.5V, V
DS
=10V,
R
L
=55Ω, R
G
=6Ω
ns
V
Turn-Off Delay Time
Fall Time
BODY DIODE CHARACTERISTICS
Forward Voltage
V
SD
V
GS
=0V, I
S
=1.0A
0.75
1.25
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SI2300
Rev-1.1
7. Typical
Characteristic
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SI2300
Rev-1.1
8. Dimension
(SOT-23)
θ
D
b
L1
3
E1
E
1
2
L
e
C
e1
A1
A
Unit: mm
Dimensions
Dimensions
Symbol
Symbol
Min.
Max.
1.150
1.050
0.500
0.150
3.00
Min.
Max.
A
A1
b
0.900
0.900
0.300
0.080
2.800
1.200
E1
e
2.250
2.550
0.950TYP
0.550REF
e1
L
1.800
2.000
c
D
E
L1
θ
0.300
0.500
1.400
0
°
8
°
Table-5 Product
dimensions in millimeter
0.60
0.80
Note:
2.02
1. Controlling
dimension: in millimeters
2. General
tolerance:
±
0.05mm
3. The
pad layout is for reference only
Unit: mm
1.90
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SI2300
Rev-1.1
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