ElecSuper-SI2301-ES
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SI2301-ES
Rev-1.1
SuperMOS – SOT-23 -20V BV
DSS
, 58mΩ R
DS(on)
,-3.0A I
D
P-channel MOSFET
1. Description
The SI2301-ES is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent R
DS(ON)
with low gate charge. Device is suitable for use in
DC-DC conversion, power switch and charging circuit. Standard Product SI2301-ES is Pb-free.
2. Features
-20V, R
DS(ON)
=58mΩ(Typ), V
GS
=-4.5V
Fast Switching
Material: Halogen free
Reliable and rugged
Avalanche Rated
High density cell design for low R
DS(on)
Low leakage current
3. Applications
PWM applications
Load switch
Power management in portable/desktop PCs
DC/DC conversion
4. Ordering
Information
Part Number
SI2301-ES
Package
SOT-23
Material
Quantity per reel
3,000 PCS
Flammability Rating
UL 94V-0
Halogen free
Table-1 Ordering
information
5. Pin
Configuration and Functions
Pin
1
Function
Gate
Outline
Circuit Diagram
3
2
Source
Drain
1
2
3
Table-2 Pin
configuration
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SI2301-ES
Rev-1.1
6. Specification
Absolute Maximum Rating & Thermal Characteristics
Ratings at 25
℃
ambient temperature unless otherwise specified.
Parameter
Drain-Source Voltage
Symbol
BV
DSS
V
GS
Limit
-20
Unit
V
Gate-Source Voltage
±8
V
T
A
=25°C
T
A
=75°C
T
A
=25°C
T
A
=75°C
3.0
Continuous Drain Current
I
D
A
1.7
1.4
Maximum Power Dissipation
P
D
W
0.84
9.2
Pulsed Drain Current
I
DM
T
J
A
Operating Junction
T
emperature
Storage
T
emperature Range
150
°C
°C
T
stg
-55 to +150
Thermal resistance ratings
Single Operation
Parameter
Junction-to-Ambient Thermal Resistance
Symbol
R
θJA
Typical
90
Unit
°C/W
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SI2301-ES
Rev-1.1
Electrical Characteristics
At TA = 25
℃
unless otherwise specified
Parameter
Symbol
Test Conditions
Min.
-20
Typ.
Max. Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
BV
DSS
I
DSS
V
GS
=0V, I
D
=-250uA
V
V
DS
=-20V, V
GS
=0V
V
DS
=0V, V
GS
=±8V
-1
uA
nA
I
GSS
±100
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
R
DS(on)
gfs
V
GS
=V
DS
, I
D
=-250uA
-0.4
-0.7
58
-1.0
75
V
mΩ
S
V
GS
=-4.5V, I
D
=-3.0A
V
GS
=-2.5V, I
D
=-2.0A
V
DS
=-5V, I
D
=-2.3A
Drain-to-source On-resistance
80
90
Forward trans conductance(a)
6.5
CHARGES, CAPACITANCES AND GATE RESISTANCE
C
ISS
Input Capacitance
Output Capacitance
405
75
V
GS
=0V, V
DS
=-10
V
,
C
OSS
pF
Ω
f=1MHz
Reverse Transfer Capacitance
Gate Resistance
C
RSS
R
g
55
f=1MHZ
6
Total Gate Charge
Q
G(TOT)
Q
GS
3.3
0.7
1.3
6
V
GS
=-2.5V, V
DS
=-10V,
I
D
=-2.3A
Gate-to-Source Charge
Gate-to-Drain Charge
nC
Q
GD
SWITCHING CHARACTERISTICS
t
d(ON)
Turn-On Delay Time
Rise Time
11
35
30
10
20
60
50
20
V
GS
=-4.5
V
,
V
DS
=10
V
,
t
r
R
L
=10Ω
，
I
D
=-1A,
ns
V
Turn-Off Delay Time
Fall Time
t
d(OFF)
R
G
=1Ω
t
f
BODY DIODE CHARACTERISTICS
Forward Voltage
V
SD
V
GS
=0V, I
S
=-1.0A
-0.8
-1.2
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SI2301-ES
Rev-1.1
7. Typical
Characteristic
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SI2301-ES
Rev-1.1
8. Dimension
(SOT-23)
θ
D
b
L1
3
E1
E
1
2
L
e
C
e1
A1
A
COMMON DIMENSIONS: UNITS OF MEASURE=MILLIMETER
Dimensions
Dimensions
Symbol
Symbol
Min.
Max.
1.150
1.050
0.500
0.150
3.00
Min.
Max.
A
A1
b
0.900
0.900
0.300
0.080
2.800
1.200
E1
e
2.250
2.550
0.950TYP
0.550REF
e1
L
1.800
2.000
c
D
E
L1
θ
0.300
0.500
1.400
0
°
8
°
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SI2301-ES
Rev-1.1
DISCLAIMER
ELECSUPER PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES
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INCLUDING WITHOUT LIMITATION ANY IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR
PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS.
These resources are intended for skilled developers designing with ElecSuper products. You are solely responsible for
(1) selecting the appropriate ElecSuper products for your application;
(2) designing, validating and testing your application;
(3) ensuring your application meets applicable standards, and any other safety, security, or other requirements.
These resources are subject to change without notice. ElecSuper grants you permission to use these resources only for
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