ElecSuper-SI3134KE-TP-ES
| Part # | ElecSuper-SI3134KE-TP-ES |
Download  | ElecSuper-SI3134KE-TP-ES |
SI3134KE-TP-ES
Rev-1.2
SuperMOS – SOT-523 20V BV
DSS
, 220mΩ R
DS(ON)
, N-channel MOSFET
1. Description
The SI3134KE-TP-ES is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent R
DS(ON)
with low gate charge. Device is suitable for use in
DC-DC conversion, power switch and charging circuit. Standard Product SI3134KE-TP-ES is Pb-free.
2. Features
20V, R
DS(ON)
=220mΩ(Typ.) @ V
GS
=4.5V
Use trench MOSFET technology
High density cell design for low R
DS(on)
Material: Halogen free
Reliable and rugged
Avalanche Rated
Low leakage current
3. Applications
PWM applications
Load switch
Power management in portable/desktop PCs
DC/DC conversion
4. Ordering
Information
Quantity
per reel
Flammability
Rating
Reel
Size
7
Part Number
Package Marking
Material Packing
Halogen
free
Tape &
Reel
SI3134KE-TP-ES SOT-523
34KW
3,000 PCS
UL 94V-0
inches
5. Pin
Configuration and Functions
Pin
1
Function
Gate
Outline
Circuit Diagram
3
2
3
Source
Drain
34KW
1
2
Copyright© ElecSuper Incorporated
Contact Us
1
/
7
SI3134KE-TP-ES
Rev-1.2
6. Specification
Absolute Maximum Rating & Thermal Characteristics
Ratings at 25
℃
ambient temperature unless otherwise specified.
Parameter
Drain-Source Voltage
Symbol
BV
DSS
V
GS
Limit
20
Unit
V
Gate-Source Voltage
±12
V
T
A
=25°C
T
A
=75°C
0.88
Continuous Drain Current
I
D
A
0.68
Maximum Power Dissipation
Pulsed Drain Current
P
D
I
DM
T
J
0.35
W
A
3.52
Operating Junction
T
emperature
Lead
T
emperature
150
°C
°C
°C
T
L
260
Storage
T
emperature Range
T
stg
-55 to 150
Thermal resistance ratings
Single Operation
t ≤ 10s
Parameter
Junction-to-Ambient Thermal Resistance
Symbol
R
θJA
Typical
Maximum
357
Unit
°C/W
Copyright© ElecSuper Incorporated
Contact Us
2
/
7
SI3134KE-TP-ES
Rev-1.2
Electrical Characteristics
At TA = 25
℃
unless otherwise specified
Parameter
Symbol
Test Conditions
Min.
20
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
BV
DSS
I
DSS
V
GS
=0V, I
D
=250uA
V
V
DS
=20V, V
GS
=0V
V
DS
=0V, V
GS
=±10V
1
uA
uA
I
GSS
±10
ON CHARACTERISTICS
V
GS(TH)
V
GS
=V
DS
, I
D
=250uA
Gate Threshold Voltage
0.35
0.75
220
290
420
1.1
300
400
700
V
V
GS
=4.5V, I
D
=0.5A
V
GS
=2.5V, I
D
=0.4A
V
GS
=1.8V, I
D
=0.2A
Drain-to-source On-resistance
R
DS(on)
mΩ
CHARGES, CAPACITANCES AND GATE RESISTANCE
C
ISS
Input Capacitance
Output Capacitance
56
20
V
GS
=0V, f=1MHz,
C
OSS
pF
nC
V
DS
=10V
Reverse Transfer Capacitance
Total Gate Charge
C
RSS
Q
G(TOT)
Q
GS
2.5
1
V
GS
=4.5V, V
DS
=10V,
I
D
=0.5A
Gate-to-Source Charge
Gate-to-Drain Charge
0.28
0.22
Q
GD
SWITCHING CHARACTERISTICS
t
d(ON)
Turn-On Delay Time
Rise Time
2
18.8
10
t
r
t
d(OFF)
t
f
V
GS
=4.5V, V
DS
=10V,
I
D
=0.5A, R
G
=10Ω
ns
V
Turn-Off Delay Time
Fall Time
23
BODY DIODE CHARACTERISTICS
V
SD
V
GS
=0V, I
S
=0.5A
Forward Voltage
1.2
Copyright© ElecSuper Incorporated
Contact Us
3
/
7
SI3134KE-TP-ES
Rev-1.2
7. Typical
Characteristic
Figure1. Output Characteristics
Figure2. Transfer Characteristics
Figure3. Capacitance Characteristics
Figure4. Gate Charge
Figure5. Drain-Source on Resistance
Figure6. Drain-Source on Resistance
Copyright© ElecSuper Incorporated
Contact Us
4
/
7
SI3134KE-TP-ES
Rev-1.2
Figure7. Safe Operation Area
Copyright© ElecSuper Incorporated
Contact Us
5
/
7
SI3134KE-TP-ES
Rev-1.2
8. Dimension
(SOT-523)
θ
D
b2
3
E
E1
L1
L
1
2
e
c
b1
e1
A1
A2
A
Units in millimeters
Millimeters
Millimeters
REF
REF
Min
0.70
0.00
0.70
0.15
0.25
0.10
1.50
Max
0.90
0.10
0.80
0.25
0.35
0.20
1.70
Min
Max
1.75
0.90
A
A1
A2
b1
b2
c
E
E1
e
1.45
0.70
0.50 TYP
0.40 REF
e1
L
0.90
0.26
1.10
0.46
L1
θ
D
0
°
8
°
Copyright© ElecSuper Incorporated
Contact Us
6
/
7
SI3134KE-TP-ES
Rev-1.2
DISCLAIMER
ELECSUPER PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES
(INCLUDING REFERENCE DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, SAFETY INFORMATION, AND
OTHER RESOURCES “AS IS” AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED,
INCLUDING WITHOUT LIMITATION ANY IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR
PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS.
These resources are intended for skilled developers designing with ElecSuper products. You are solely responsible for
(1) selecting the appropriate ElecSuper products for your application;
(2) designing, validating and testing your application;
(3) ensuring your application meets applicable standards, and any other safety, security, or other requirements.
These resources are subject to change without notice. ElecSuper grants you permission to use these resources only for
development of an application that uses the ElecSuper products described in the resource. Other reproduction and display of
these resources are prohibited. No license is granted to any other ElecSuper intellectual property right or to any third party
intellectual property right. ElecSuper disclaims responsibility for, and you will fully indemnify ElecSuper and its representatives
against, any claims, damages, costs, losses, and liabilities arising out of your use of these resources. ElecSuper’s products are
conjunction with such ElecSuper products. ElecSuper’s provision of these resources does not expand or otherwise alter
ElecSuper’s applicable warranties or warranty disclaimers for ElecSuper products.
Copyright© ElecSuper Incorporated
Contact Us
7
/
7
