ElecSuper-SS8550

Part #ElecSuper-SS8550
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ElecSuper-SS8550
SS8550  
Rev-1.1  
SuperTransistor
–
V

CBO

-40V, I

C

-1500mA SOT-23 Plastic-Encapsulate PNP Transistors  
1. Features  
2. Mechanical
 
Data  
⚫
⚫
⚫
Complementary to SS8050  
Power dissipation of 300mW  
High stability and high reliability  
⚫
⚫
⚫
SOT-23 Small Outline Plastic Package  
Epoxy UL: 94V-0  
Mounting Position: Any  
3. Pin
 
configuration  
Pin  
1
Function  
Base  
Outline  
3
2
Emitter  
Y2  
1
2
3
Collector  
4. Specification  
Absolute Maximum Rating & Thermal Characteristics  
Ratings at 25
 
℃
ambient temperature unless otherwise specified.  
Parameters  
Symbol  
V

CBO  

V

CEO  

V

EBO  

I

C  

Value  
-40  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-25  
V
-5  
V
Collector Current-Continuous  
Collector Power Dissipation  
Junction Temperature  
-1500  
300  
150  
mA  
mW  
℃
P

C  

T

j  

Storage Temperature  
T

STG  

R

θJA  

-55~150  
417  
℃
Thermal resistance From junction to ambient  
℃
/W  
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SS8550  
Rev-1.1  
Electrical Characteristics(
At TA = 25
℃
unless otherwise specified)  
Limits  
Parameters  
Symbols  
Test Condition  
Min  
-40  
-25  
-5  
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
V

(BR)CBO  

V

(BR)CEO  

V

(BR)EBO  

I

CEO  

I

C

=-100uA, I

E

=0  
I

C

=-0.1mA, I

B

=0  
V
I

E

=-100uA, I

C

=0  
V
V

CE

=-20V, I

B

=0  
-100  
-100  
-100  
400  
Collector cut-off current  
Emitter cut-off current  
DC current gain  
nA  
nA  
I

CBO  

V

CB

=-40V, I

E

=0  
I

EBO  

V

EB

=-5V, I

C

=0  
h

FE1  

V

CE

=-1V, I

C

=-100mA  
V

CE

=-1V, I

C

=-800mA  
I

C

=-800mA, I

B

=-80mA  
I

C

=-800mA, I

B

=-80mA  
V

CE

=-1V, I

C

=-10mA  
V

CE

=-10V, I

C

=-50mA, f=30MHz  
V

CB

=-10V, I

E

=0, f=1MHz  
120  
40  
h

FE2  

Collector-emitter saturation voltage  
Base -emitter saturation voltage  
Base-emitter voltage  
V

CE(sat)  

V

BE(sat)  

V

BE  

-0.50  
-1.20  
-1.00  
V
V
V
Transition frequency  
f

T  

100  
MHz  
pF  
Collector output capacitance  
C

OB  

20  
Classification of h

FE(1)  

Rank  
L
H
J
Range  
120~200  
200~350  
300~400  
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SS8550  
Rev-1.1  
5. Typical
 
Characteristic  
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SS8550  
Rev-1.1  
6. Dimension
 
and Patterns (SOT-23)  
θ
D
b
L1  
L
3
E1  
E
1
2
e
C
e1  
A1  
A
Units: mm  
Dimensions  
Dimensions  
Symbol  
Symbol  
Min.  
Max.  
1.150  
1.050  
0.500  
0.150  
3.00  
Min.  
Max.  
A
A1  
b
0.900  
0.900  
0.300  
0.080  
2.800  
1.200  
E1  
e
2.250  
1.800  
2.550  
0.950TYP  
0.550REF  
e1  
L
2.000  
c
D
E
L1  
θ
0.300  
0.500  
1.400  
0
°  
8
°  
0.60  
0.80  
Note:  
1. Controlling
 
dimension: in millimeters  
2. General
 
tolerance:
±
0.05mm  
3. The
 
pad layout is for reference only  
4. Unit:
 
mm  
2.02  
1.90  
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SS8550  
Rev-1.1  
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(2) designing, validating and testing your application;  
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’s products are  
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