EMC-EMB17C03G
| Part # | EMC-EMB17C03G |
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EMB17C03G
N & P
‐
Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N
‐
CH
30V
P
‐
CH
‐
30V
20m
Ω
‐
8A
BV
DSS
17m
Ω
10A
R
DSON (MAX.)
I
D
UIS, Rg 100%
T
e
sted
Pb
‐
Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNIT
Gate
‐
Source Voltage
V
GS
N
‐
CH
±20
10
P
‐
CH
±20
‐
8
V
T
C
= 25 °C
Continuous Drain Current
I
D
T
C
= 100 °C
7
‐
6
A
Pulsed Drain Current
1
I
DM
I
AS
40
‐
32
‐
10
2.45
Avalanche Current
10
L = 0.1mH, ID=8A, RG=25
Ω
(N)
L = 0.1mH, ID=
‐
7A, RG=25
Ω
(P)
Avalanche Energy
E
AS
3.2
mJ
Repetitive Avalanche Energy
2
Power Dissipation
L = 0.05mH
T
C
= 25 °C
E
AR
P
D
1.6
1.23
2
W
°C
T
C
= 100 °C
0.8
Operating Junction & Storage Temperature Range
T
j
, T
stg
‐
55 to 150
100% UIS testing in condition of V
D
=15V, L=0.1mH, V
G
=10V, I
L
=8A, Rated V
DS
=30V N
‐
CH
100% UIS testing in condition of V
D
=15V, L=0.1mH, V
G
=
‐
10V, I
L
=
‐
7A, Rated V
DS
=
‐
30V P
‐
CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction
‐
to
‐
Case
SYMBOL
R
JC
TYPICAL
MAXIMUM
UNIT
25
°C / W
Junction
‐
to
‐
Ambient
3
62.5
R
JA
203/1/10
p.1
EMB17C03G
1
Pulse width limited by maximum junction temperature.
2
Duty cycle
1
％
3
62.5°C / W when mounted on a 1 in
2
pad of 2 oz coppe
r
.
ELECTRICAL CHARACTERISTICS (T
C
= 25 °C, Unless Otherwise Noted)
LIMITS
MIN TYP
MAX
UNIT
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
Drain
‐
Source Breakdown Voltage
V
(BR)DSS
N
‐
CH 30
P
‐
CH
‐
30
N
‐
CH
V
V
GS
= 0V, I
D
= 250
A
V
GS
= 0V, I
D
=
‐
250
A
V
DS
= V
GS
, I
D
= 250
A
V
DS
= V
GS
, I
D
=
‐
250
A
V
DS
= 0V, V
GS
= ±20V
V
DS
= 0V, V
GS
= ±20V
V
DS
= 24V, V
GS
= 0V
V
DS
=
‐
24V, V
GS
= 0V
Gate Threshold Voltage
Gate
‐
Body Leakage
V
GS(th)
1
1.5
3
P
‐
CH
‐
1
N
‐
CH
‐
1.5
‐
3
I
GSS
±100 nA
±100
P
‐
CH
Zero Gate Voltage Drain Current
I
DSS
N
‐
CH
1
A
P
‐
CH
‐
1
V
DS
= 20V, V
GS
= 0V, T
J
= 125 °C
N
‐
CH
V
DS
=
‐
20V, V
GS
= 0V, T
J
= 125 °C
P
‐
CH
25
‐
25
On
‐
State Drain Current
1
I
D(ON)
V
DS
= 10V, V
GS
= 10V
V
DS
=
‐
5V, V
GS
=
‐
10V
V
GS
= 10V, I
D
= 10A
V
GS
=
‐
10V, I
D
=
‐
8A
V
GS
= 4.5V, I
D
= 6A
V
GS
=
‐
4.5V, I
D
=
‐
6A
V
DS
= 5V, I
D
= 10A
V
DS
=
‐
5V, I
D
=
‐
8A
N
‐
CH 10
A
P
‐
CH
‐
8
N
‐
CH
Drain
‐
Source On
‐
State Resistance
1
R
DS(ON)
14.5
17.5
21
17
20
26
35
m
Ω
P
‐
CH
N
‐
CH
P
‐
CH
26
Forward Transconductance
1
g
fs
N
‐
CH
18
S
P
‐
CH
24
DYNAMIC
Input Capacitance
C
iss
C
oss
C
rss
N
‐
CH
N
‐
CH
P
‐
CH
N
‐
CH
P
‐
CH
N
‐
CH
P
‐
CH
597
1407
111
208
96
V
GS
= 0V, V
DS
= 15V, f = 1MHz
P=CH
pF
Output Capacitance
V
GS
= 0V, V
DS
=
‐
15V, f = 1MHz
Reverse Transfer Capacitance
164
203/1/10
p.2
EMB17C03G
Gate Resistance
R
g
V
GS
= 15mV, V
DS
= 0V, f = 1MHz
N
‐
CH
P
‐
CH
2.0
4.0
14
Ω
T
o
tal Gate Charge
1,2
Q
g
(
V
GS
=10V
)
N
‐
CH
V
DS
= 15V, V
GS
= 10V,
I
D
= 10A
N
‐
CH
P
‐
CH
N
‐
CH
P
‐
CH
N
‐
CH
P
‐
CH
N
‐
CH
P
‐
CH
N
‐
CH
P
‐
CH
N
‐
CH
P
‐
CH
N
‐
CH
Q
g
(
V
GS
=
‐
10V
)
20.3
7.8
9.8
1.8
3.2
4.7
4.9
11
nC
Q
g
(
V
GS
=4.5V
)
P
‐
CH
Q
g
(
V
GS
=
‐
4.5V
)
V
DS
=
‐
15V, V
GS
=
‐
10V,
I
D
=
‐
8A
Gate
‐
Source Charge
1,2
Gate
‐
Drain Charge
1,2
Turn
‐
On Delay Time
1,2
Rise Time
1,2
Q
gs
Q
gd
t
d(on)
t
r
N
‐
CH
V
DS
= 15V,
10
nS
I
D
= 1A, V
GS
= 10V, R
GS
= 6
Ω
P
‐
CH
16
8
Turn
‐
Off Delay Time
1,2
t
d(off)
V
DS
=
‐
15V,
36
I
D
=
‐
1A, V
GS
=
‐
10V, R
GS
= 6
Ω
P
‐
CH
N
‐
CH
P
‐
CH
25
20
10
Fall Time
1,2
t
f
SOURCE
‐
DRAIN DIODE RATINGS AND CHARACTERISTICS (T
C
= 25 °C)
Continuous Current
Pulsed Current
3
I
S
N
‐
CH
P
‐
CH
N
‐
CH
P
‐
CH
2.3
A
‐
2.3
I
SM
9.2
‐
9.2
Forward Voltage
1
V
SD
I
F
= I
S
, V
GS
= 0V
N
‐
CH
P
‐
CH
1.2
V
‐
1.2
Reverse Recovery Time
t
rr
I
RM(REC)
Q
rr
N
‐
CH
P
‐
CH
N
‐
CH
P
‐
CH
N
‐
CH
50
32
30
‐
28
20
nS
A
Peak Reverse Recovery Current
Reverse Recovery Charge
I
F
= I
S
, dl
F
/dt = 100A /
S
nC
P
‐
CH
26
1
Pulse test : Pulse Width
300
sec, Duty Cycle
2
％
.
2
Independent of operating temperature.
203/1/10
p.3
EMB17C03G
3
Pulse width limited by maximum junction temperature.
Ordering & Marking Information:
Device Name: EMB17C03G for SOP
‐
8
B17
B17C03: Device Name
C03
ABCDEFG: Date Code
ABCDEFG
Outline Drawing
J
F
I
K
G
H
I
D
E
B
C
A
Dimension in mm
Dimension
Min.
A
B
C
D
E
F
G
H
I
J
K
0
∘
4.70
3.70
5.80
0.33
1.20
0.08
0.40
0.19
0.25
Typ.
1.27
8
∘
Max.
5.10
4.10
6.20
0.51
1.62
0.28
0.83
0.26
0.50
203/1/10
p.4
EMB17C03G
N
‐
Channel
On
‐
Region Characteristics
On
‐
Resistance Variation with Drain Current and Gate Voltage
40
2.4
2.2
2.0
1.8
V
GS
= 10V
6V
7V
5V
32
24
16
8
4.5V
1.6
1.4
1.2
V
GS
= 4.5 V
5.0 V
6.0 V
7.0 V
10 V
1.0
0.8
0
0
8
16
24
32
40
0
1
2
3
4
5
V
DS
‐
Drain Source Voltage( V )
I
D
‐
Drain Current( A )
On
‐
Resistance Variation with Temperature
On
‐
Resistance Variation with Gate
‐
Source Voltage
1.9
0.08
I
D
= 10A
GS
= 10V
I
D
= 5 A
0.07
0.06
V
1.6
1.3
1.0
0.7
0.4
0.05
0.04
0.03
0.02
T
A
= 125°C
T
A
= 25°C
0.01
0
‐
50
‐
25
0
25
50
75 100
125
150
2
4
6
8
10
V
GS
‐
Gate
‐
Source Voltage( V )
T
J
‐
Junction Temperature (°C)
Body Diode Forward Voltage Variation
with Source Current and Temperature
Transfer Characteristics
30
100
10
V
DS
= 10V
V
GS
= 0V
25
20
15
A
T =
125° C
25° C
T
A
=
‐
55° C
25° C
1
0.1
125° C
‐
55° C
10
0.01
5
0
0.001
1
1.5
2.0
2.5
3.0
3.5
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
GS
‐
Gate
‐
Source Voltage( V )
V
SD
‐
Body Diode Forward Voltage( V )
203/1/10
p.5
EMB17C03G
Capacitance Characteristics
Gate Charge Characteristics
1000
900
800
700
600
500
400
10
f = 1MHz
GS
= 0 V
I
D
= 10A
V
8
6
4
V
DS
= 5V
10V
Ciss
15V
300
200
100
0
2
0
Coss
Crss
0
5
10
15
20
25
30
0
4
8
12
16
V
DS
‐
Drain
‐
Source Voltage( V )
Q
g
‐
Gate Charge( nC )
Maximum Safe Operating Area
Single Pulse Maximum Power Dissipation
Single Pulse
100
10
50
R
DS(ON)
Limit
R
θ
J
A
= 125° C/W
100
μ
s
1ms
10ms
100ms
1s
T
A
= 25° C
40
30
1
10s
DC
20
0.1
V
GS
= 10V
10
0
Single Pulse
R
JA
= 125°C/W
T
A
= 25°C
0.01
0.1
1
0.001
0.01
0.1
1
10
100
1000
10
V
DS
‐
Drain
‐
Source Voltage( V )
100
Transient Thermal Response Curve
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
Notes
:
0.02
0.01
P
DM
t1
t2
t1
t2
0.01
1.Duty Cycle,D =
2.R
θ
JA
=125°C/W
3.T
J
T
A
= P *
R
θ
JA
(t)
4.
R
θ
J
A
(t)=r(t) * R
Single Pulse
‐
θ
JA
0.001
10
‐
4
‐
3
‐
2
‐
1
10
10
10
t
1
,Time (sec)
1
10
100
1000
203/1/10
p.6
EMB17C03G
P
‐
Channel
On
‐
Region Characteristics
On
‐
Resistance Variation with Drain Current and Gate Voltage
40
2.4
V
GS
=
‐
10V
2.2
2.0
1.8
1.6
1.4
32
24
‐
7.0V
‐
6.0V
‐
5.0V
V
GS
=
‐
4.5 V
‐
5 V
‐
4.5V
16
8
‐
6 V
‐
7 V
‐
10 V
1.2
1.0
0.8
0
0
1
2
3
16
0
8
24
32
40
‐
V
DS
‐
Drain
‐
Source Voltage( V )
D
‐
I
‐
Drain Current( A )
On
‐
Resistance Variation with Gate
‐
Source Voltage
I
D
=
‐
4 A
On
‐
Resistance Variation with Temperature
0.06
0.05
0.04
0.03
0.02
0.01
0
1.6
I
D
=
‐
8 A
V
GS
=
‐
10V
1.4
1.2
1.0
T
A
= 125°C
T
A
= 25°C
0.8
0.6
‐
50
‐
25
0
25
50
75
100 125
150
2
4
6
8
10
T
J
‐
Junction Temperature (°C)
‐
V
G
S
‐
Gate
‐
Source Voltage( V )
Body Diode Forward Voltage Variation
with Source Current and Temperature
Transfer Characteristics
100
10
40
V
GS
= 0V
V
DS
=
‐
5V
‐
55°C
25°C
T
A
= 125°C
30
20
1
0.1
T
A
= 125°C
25°C
‐
55°C
0.01
10
0
0.001
0.0001
1.5
2
2.5
3
3.5
4
0
0.2
0.4
0.6
0.8
1.0
1.2
‐
V
GS
‐
Gate
‐
Source Voltage( V )
‐
V
SD
‐
Body Diode Forward Voltage( V )
203/1/10
p.7
EMB17C03G
Capacitance Characteristics
Gate Charge Characteristics
2000
1600
1200
800
400
0
10
f = 1 MHz
GS
= 0 V
I
D
=
‐
8A
V
8
6
4
Ciss
‐
10V
V
DS
=
‐
5V
‐
15V
2
0
Coss
Crss
0
5
10
15
20
25
30
0
5
10
15
20
25
Q
g
‐
Gate Charge( nC )
‐
V
DS
, Drain
‐
Source Voltage( V )
Maximum Safe Operating Area
Single Pulse Maximum Power Dissipation
Single Pulse
100
10
50
R
θ
JA
= 62.5°C/W
T
A
= 25°C
100
μ
s
40
30
20
10
1ms
10ms
100ms
1s
1
10s
DC
V
GS
=
‐
10V
0.1
0.01
Single Pulse
R
JA
= 62.5°C/W
T
= 25°C
A
0
1
10
100
0.1
0.001
0.01
0.1
1
10
1000
100
‐
V
DS
‐
Drain
‐
Source Voltage( V )
t
1
,Time (sec)
Transient Thermal Response Curve
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
Notes
:
0.02
0.01
P
DM
t1
t2
0.01
t1
t2
1.Duty Cycle,D =
2.R
θ
J
A
=62.5°C/W
3.T
J
‐
T
A
= P * R
θ
JA
(t)
Single Pulse
4.
R
θ
J
A
(t)=r(t) * R
θ
JA
0.001
10
‐
3
10
‐
2
10
‐
1
t1 ,Time
(sec)
1
10
100
10
‐
4
1000
203/1/10
p.8
