EPC-EPC2100
| Part # | EPC-EPC2100 |
Download  | EPC-EPC2100 |
eGaN® FET DATASHEET
EPC2100
EPC2100 – Enhancement-Mode GaN Power
Transistor Half-Bridge
V
DS
, 30 V
R
DS(on)
, 8.2
m
Ω
(Q1), 2.1 m
Ω
(Q2)
I
D
, 10
A (Q1), 40 A (Q2)
HAL
Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very
low R
DS(on)
, while its lateral device structure and majority carrier diode provide exceptionally low Q
G
and zero Q
RR
. The end result is a device that can handle tasks where very high switching frequency,
and low on-time are beneficial as well as those where on-state losses dominate.
Maximum Ratings
EPC2100
eGaN® ICs are supplied only in
passivated die form with solder bumps
Die Size: 6.05 mm x 2.3 mm
DEVICE
PARAMETER
VALUE
UNIT
Drain-to-Source Voltage (Continuous)
Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C)
Continuous (T
A
= 25°C, R
θJA
= 92°C/W)
Pulsed (25°C, T
PULSE
= 300 µs)
30
V
DS
V
36
10
Applications
I
D
A
V
100
Q1
• High Frequency DC-DC
• Point-of-Load (POL) Converters
Benefits
Gate-to-Source Voltage
6
V
GS
T
J
Gate-to-Source Voltage
-4
Operating Temperature
–40 to 150
°C
V
T
STG
Storage Temperature
–40 to 150
• High
Frequency Operation
• Ultra
High Efficiency
• High
Density Footprint
Drain-to-Source Voltage (Continuous)
V
DS
30
Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C)
36
Continuous (T
A
= 25°C, R
θJA
= 22°C/W)
40
I
D
A
Pulsed (25°C, T
PULSE
= 300 µs)
400
6
Q2
Gate-to-Source Voltage
V
GS
V
Gate-to-Source Voltage
-4
T
J
Operating Temperature
–40 to 150
–40 to 150
°C
T
STG
Storage Temperature
Thermal Characteristics (T
J
= 25°C unless otherwise stated)
PARAMETER
TYP
0.4
2.5
42
UNIT
R
θJC
R
θJB
R
θJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Board
Thermal Resistance, Junction-to-Ambient (Note 1)
°C/W
Note 1: R
θJA
is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.
See
https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf
for details
|
1
eGaN® FET DATASHEET
EPC2100
Static Characteristics (T
J
= 25°C unless otherwise stated)
DEVICE
BV
DSS
I
DSS
PARAMETER
TEST CONDITIONS
V
GS
= 0 V, I
D
= 0.3 mA
V
DS
= 24 V, V
GS
= 0 V
V
GS
= 5 V
MIN
TYP
MAX
UNIT
V
Drain-to-Source Voltage
30
Drain-Source Leakage
0.004
0.007
0.004
1.3
0.2
3
mA
mA
mA
V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Threshold Voltage
I
GSS
Q1
V
GS
= -4 V
0.2
2.5
8.2
V
GS(TH)
R
DS(on)
V
SD
V
DS
= V
GS
, I
D
= 4 mA
V
GS
= 5 V, I
D
= 25 A
I
S
= 0.5 A, V
GS
= 0 V
V
GS
= 0 V, I
D
= 1 mA
V
DS
= 24 V, V
GS
= 0 V
V
GS
= 5 V
0.8
30
Drain-Source On Resistance
Source-Drain Forward Voltage
Drain-to-Source Voltage
6
mΩ
V
1.8
BV
DSS
I
DSS
V
Drain-Source Leakage
0.015
0.03
0.015
1.3
0.8
9
mA
mA
mA
V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Threshold Voltage
I
GSS
Q2
V
GS
= -4 V
0.8
2.5
2.1
V
GS(TH)
R
DS(on)
V
SD
V
DS
= V
GS
, I
D
= 16 mA
V
GS
= 5 V, I
D
= 25 A
I
S
= 0.5 A, V
GS
= 0 V
0.8
Drain-Source On Resistance
Source-Drain Forward Voltage
1.5
mΩ
V
1.7
Dynamic Characteristics
DEVICE
PARAMETER
TEST CONDITIONS
MIN TYP
395
15
MAX
UNIT
C
ISS
Input Capacitance
475
C
RSS
Reverse Transfer Capacitance
Output Capacitance
V
DS
= 15 V, V
GS
= 0 V
C
OSS
C
OSS(ER)
C
OSS(TR)
Q
G
290
371
404
3.6
435
pF
Effective Output Capacitance, Energy Related (Note 2)
Effective Output Capacitance, Time Related (Note 3)
Total Gate Charge
V
DS
= 0 to 15 V, V
GS
= 0 V
Q1
V
DS
= 15 V, V
GS
= 5 V,
I
D
= 25 A
V
DS
= 15 V, I
D
= 25 A
4.9
9.2
Q
GS
Gate-to-Source Charge
1.3
Q
GD
Gate-to-Drain Charge
0.6
nC
pF
nC
Q
G(TH)
Q
OSS
Q
RR
Gate Charge at Threshold
0.9
Output Charge
V
DS
= 15 V, V
GS
= 0 V
6.1
Source-Drain Recovery Charge
Input Capacitance
0
C
ISS
1630
64
1960
2060
C
RSS
Reverse Transfer Capacitance
Output Capacitance
V
DS
= 15 V, V
GS
= 0 V
C
OSS
C
OSS(ER)
C
OSS(TR)
Q
G
1370
1740
1900
15
Effective Output Capacitance, Energy Related (Note 2)
Effective Output Capacitance, Time Related (Note 3)
Total Gate Charge
V
DS
= 0 to 15 V, V
GS
= 0 V
Q2
V
DS
= 15 V, V
GS
= 5 V,
I
D
= 25 A
19
44
Q
GS
Gate-to-Source Charge
4.8
Q
GD
Gate-to-Drain Charge
V
DS
= 15 V, I
D
= 25 A
V
DS
= 15 V, V
GS
= 0 V
2.7
Q
G(TH)
Q
OSS
Q
RR
Gate Charge at Threshold
3.4
Output Charge
29
Source-Drain Recovery Charge
0
Note 2: C
O
SS(ER)
is a fixed capacitance that gives the same stored energy as C
OSS
while V
DS
is rising from 0 to 50% BV
DSS
Note 3: C
OSS(TR)
is a fixed capacitance that gives the same charging time as C
OSS
while V
DS
is rising from 0 to 50% BV
DSS
.
.
| 2
eGaN® FET DATASHEET
EPC2100
Fꢃꢏꢆꢂe ꢐa ꢈꢑꢐꢉꢒ Tꢓꢔꢃꢍaꢎ ꢕꢆꢇꢔꢆꢇ ꢅꢖaꢂaꢍꢇeꢂꢃꢗꢇꢃꢍꢗ aꢇ ꢘꢙꢚꢅ
Fꢃꢏꢆꢂe ꢐꢑ ꢈꢒꢓꢉꢔ Tꢕꢖꢃꢍaꢎ ꢗꢆꢇꢖꢆꢇ ꢅꢘaꢂaꢍꢇeꢂꢃꢙꢇꢃꢍꢙ aꢇ ꢓꢚꢛꢅ
100
ꢀ0
ꢁ0
ꢂ0
20
0
ꢀ00
ꢁ00
200
100
0
ꢆ
ꢆ
ꢆ
ꢆ
ꢉ ꢄ ꢆ
ꢉ ꢂ ꢆ
ꢉ ꢅ ꢆ
ꢉ 2 ꢆ
ꢄ
ꢄ
ꢄ
ꢄ
ꢇ ꢃ ꢄ
ꢇ ꢀ ꢄ
ꢇ ꢁ ꢄ
ꢇ 2 ꢄ
ꢇꢈ
ꢇꢈ
ꢇꢈ
ꢇꢈ
ꢅꢆ
ꢅꢆ
ꢅꢆ
ꢅꢆ
0
0ꢃꢄ
1ꢃ0
1ꢃꢄ
2ꢃ0
2ꢃꢄ
ꢅꢃ0
0
0ꢂꢃ
1ꢂ0
1ꢂꢃ
2ꢂ0
2ꢂꢃ
ꢁꢂ0
ꢊ
DS
ꢁ
DꢂaꢃꢄꢋꢇꢌꢋSꢌꢆꢂꢍe ꢊꢌꢎꢇaꢏe ꢈꢊꢉ
ꢊ
DS
ꢁ
DꢂaꢃꢄꢋꢇꢌꢋSꢌꢆꢂꢍe ꢊꢌꢎꢇaꢏe ꢈꢊꢉ
Fꢃꢏꢆꢂe ꢐa ꢈꢑꢒꢉꢓ Tꢂaꢄꢔꢕeꢂ ꢅꢖaꢂaꢍꢇeꢂꢃꢔꢇꢃꢍꢔ
Fꢃꢏꢆꢂe ꢐꢑ ꢈꢒꢐꢉꢓ Tꢂaꢄꢔꢕeꢂ ꢅꢖaꢂaꢍꢇeꢂꢃꢔꢇꢃꢍꢔ
100
80
60
40
20
0
400
300
200
100
0
25˚C
125˚C
25˚C
125˚C
V
DS
= 3 V
V
DS
= 3 V
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
ꢊ
GS
ꢁ GaꢇeꢋꢇꢌꢋSꢌꢆꢂꢍe ꢊꢌꢎꢇaꢏe ꢈꢊꢉ
ꢊ
GS
ꢁ GaꢇeꢋꢇꢌꢋSꢌꢆꢂꢍe ꢊꢌꢎꢇaꢏe ꢈꢊꢉ
Fꢇꢐꢊꢆe ꢑa ꢁꢒꢓꢄꢔ ꢀ
DSꢁꢂꢃꢄ
ꢕꢌꢖ ꢎ
GS
ꢗꢂꢆ ꢎaꢆꢇꢂꢊꢌ Dꢆaꢇꢃ ꢘꢊꢆꢆeꢃꢉꢌ
Fꢇꢐꢊꢆe ꢑꢒ ꢁꢓꢔꢄꢕ ꢀ
DSꢁꢂꢃꢄ
ꢖꢌꢗ ꢎ
GS
ꢘꢂꢆ ꢎaꢆꢇꢂꢊꢌ Dꢆaꢇꢃ ꢙꢊꢆꢆeꢃꢉꢌ
ꢈ
ꢂ
ꢃ
ꢀ
2
1
0
ꢄ
ꢅ
ꢆ 1ꢂ ꢇ
ꢄ
ꢅ
ꢆ 2ꢂ ꢇ
ꢄ
ꢅ
ꢆ ꢀꢂ ꢇ
ꢄ
ꢅ
ꢆ ꢂ0 ꢇ
20
1ꢂ
10
ꢂ
ꢄ
ꢅ
ꢆ 1ꢂ ꢇ
ꢄ
ꢅ
ꢆ 2ꢂ ꢇ
ꢄ
ꢅ
ꢆ ꢀꢂ ꢇ
ꢄ
ꢅ
ꢆ ꢂ0 ꢇ
0
2ꢁꢂ
ꢀꢁ0
ꢀꢁꢂ
ꢃꢁ0
ꢃꢁꢂ
ꢂꢁ0
2ꢁꢂ
ꢀꢁ0
ꢀꢁꢂ
ꢃꢁ0
ꢃꢁꢂ
ꢂꢁ0
ꢎ
GS
ꢅ GaꢉeꢈꢉꢂꢈSꢂꢊꢆꢋe ꢎꢂꢏꢉaꢐe ꢁꢎꢄ
ꢎ
GS
ꢅ GaꢉeꢈꢉꢂꢈSꢂꢊꢆꢋe ꢎꢂꢏꢉaꢐe ꢁꢎꢄ
| 3
eGaN® FET DATASHEET
EPC2100
Fꢀꢁꢂꢃe ꢄa ꢅꢆꢇꢈꢉ ꢊ
DSꢅꢋꢌꢈ
ꢍꢎꢏ ꢐ
GS
ꢑꢋꢃ ꢐaꢃꢀꢋꢂꢎ Teꢒꢓeꢃaꢔꢂꢃeꢎ
Fꢀꢁꢂꢃe ꢄꢅ ꢆꢇꢈꢉꢊ ꢋ
DSꢆꢌꢍꢉ
ꢎꢏꢐ ꢑ
GS
ꢒꢌꢃ ꢑaꢃꢀꢌꢂꢏ Teꢓꢔeꢃaꢕꢂꢃeꢏ
6
5
4
3
2
1
0
20
15
10
5
25˚C
125˚C
25˚C
125˚C
I
D
= 25 A
I
D
= 25 A
0
2.5
3.0
3.5
4.0
4.5
5.0
2.5
3.0
3.5
4.0
4.5
5.0
ꢐ
GS
ꢕ GaꢔeꢖꢔꢋꢖSꢋꢂꢃꢗe ꢐꢋꢘꢔaꢁe ꢅꢐꢈ
ꢑ
GS
ꢖ GaꢕeꢗꢕꢌꢗSꢌꢂꢃꢘe ꢑꢌꢙꢕaꢁe ꢆꢑꢉ
Fꢃꢈꢉꢊe ꢋa ꢆꢌꢍꢇꢎ ꢀaꢁaꢂꢃꢄaꢅꢂe ꢆꢏꢃꢅeaꢊ Sꢂaꢐeꢇ
Fꢃꢈꢉꢊe ꢋꢌ ꢆꢍꢎꢇꢏ ꢀaꢁaꢂꢃꢄaꢅꢂe ꢆꢐꢑꢈ Sꢂaꢒeꢇ
1000
100
10
ꢊ00
C
ꢂꢃꢃ
ꢄ C
ꢅꢆ
ꢇ C
ꢃꢆ
C
ꢈꢃꢃ
ꢄ C
ꢅꢆ
ꢇ C
ꢅꢃ
C
ꢉꢃꢃ
ꢄ C
ꢅꢆ
ꢋ00
ꢌ00
200
0
C
ꢂꢃꢃ
ꢄ C
ꢅꢆ
ꢇ C
ꢃꢆ
C
ꢈꢃꢃ
ꢄ C
ꢅꢆ
ꢇ C
ꢅꢃ
C
ꢉꢃꢃ
ꢄ C
ꢅꢆ
1
0
ꢀ
10
1ꢀ
20
2ꢀ
ꢁ0
0
ꢀ
10
1ꢀ
20
2ꢀ
ꢁ0
ꢑ
DS
ꢒ DꢊaꢃꢅꢓꢄꢔꢓSꢔꢉꢊꢂe ꢑꢔꢐꢄaꢈe ꢆꢑꢇ
ꢓ
DS
ꢔ DꢊaꢃꢅꢕꢄꢑꢕSꢑꢉꢊꢂe ꢓꢑꢒꢄaꢈe ꢆꢓꢇ
Fꢃꢈꢉꢊe ꢋꢂ ꢆꢌꢍꢇꢎ ꢀaꢁaꢂꢃꢄaꢅꢂe ꢆꢏꢃꢅeaꢊ Sꢂaꢐeꢇ
Fꢃꢈꢉꢊe ꢋꢌ ꢆꢍꢎꢇꢏ ꢀaꢁaꢂꢃꢄaꢅꢂe ꢆꢐꢑꢈ Sꢂaꢒeꢇ
ꢈ000
2ꢉ00
2000
1ꢉ00
1000
ꢉ00
C
ꢀꢁꢁ
ꢂ C
ꢃꢄ
ꢅ C
ꢁꢄ
C
ꢆꢁꢁ
ꢂ C
ꢃꢄ
ꢅ C
ꢃꢁ
C
ꢇꢁꢁ
ꢂ C
ꢃꢄ
1000
100
10
C
ꢂꢃꢃ
ꢄ C
ꢅꢆ
ꢇ C
ꢃꢆ
C
ꢈꢃꢃ
ꢄ C
ꢅꢆ
ꢇ C
ꢅꢃ
C
ꢉꢃꢃ
ꢄ C
ꢅꢆ
0
0
ꢉ
10
1ꢉ
20
2ꢉ
ꢈ0
0
ꢀ
10
1ꢀ
20
2ꢀ
ꢁ0
ꢑ
DS
ꢒ DꢊaꢃꢅꢓꢄꢔꢓSꢔꢉꢊꢂe ꢑꢔꢐꢄaꢈe ꢆꢑꢇ
ꢓ
DS
ꢔ DꢊaꢃꢅꢕꢄꢑꢕSꢑꢉꢊꢂe ꢓꢑꢒꢄaꢈe ꢆꢓꢇ
| 4
eGaN® FET DATASHEET
EPC2100
Figure 6a (Q1): Output Charge and C
OSS
Stored Energy
Figure 6a: Output Charge and C
OSS
Stored Energy
Figure 6b (Q2): Output Charge and C
OSS
Stored Energy
Figure 6a: Output Charge and C
OSS
Stored Energy
0ꢀ12
0ꢀ10
0ꢀ0ꢁ
0ꢀ0ꢂ
0ꢀ0ꢃ
0ꢀ02
0ꢀ00
12
10
ꢁ
0ꢄꢀ
0ꢄꢁ
0ꢄꢂ
0ꢄꢃ
0ꢄ2
0ꢄ1
0ꢄ0
ꢀ0
ꢁ0
ꢂ0
ꢃ0
20
10
0
ꢂ
ꢃ
2
0
0
ꢁ
10
1ꢁ
20
2ꢁ
ꢃ0
0
ꢄ
10
1ꢄ
20
2ꢄ
ꢅ0
V
DS
– Drain-to-Source Voltage (V)
V
DS
– Drain-to-Source Voltage (V)
Fꢀꢁꢂꢃe ꢄa ꢅꢆꢇꢈꢉ Gaꢊe ꢋꢌaꢃꢁe
Fꢀꢁꢂꢃe ꢄꢅ ꢆꢇꢈꢉꢊ Gaꢋe ꢌꢍaꢃꢁe
ꢅ
ꢀ
ꢇ
ꢈ
2
1
0
ꢂ
ꢃ
ꢄ 2ꢅ ꢆ
ꢁ
ꢂ
ꢃ 2ꢀ ꢄ
ꢅ
ꢂꢆ
ꢃ 1ꢀ ꢅ
ꢁ
ꢀ
2
1
0
ꢇ
ꢃꢈ
ꢄ 1ꢅ ꢇ
0
1
2
ꢀ
ꢁ
0
ꢀ
10
1ꢀ
ꢆ
G
ꢎ Gaꢊe ꢋꢌaꢃꢁe ꢅꢓꢋꢈ
ꢇ
G
ꢏ Gaꢋe ꢌꢍaꢃꢁe ꢆꢔꢌꢉ
Fꢈꢏꢃꢄe ꢐa ꢋꢑꢒꢌꢓ ꢔeꢕeꢄꢖe DꢄaꢈꢉꢆSꢂꢃꢄꢅe ꢊꢗaꢄaꢅꢇeꢄꢈꢖꢇꢈꢅꢖ
Fꢈꢏꢃꢄe ꢐꢑ ꢋꢒꢓꢌꢔ ꢕeꢖeꢄꢗe DꢄaꢈꢉꢆSꢂꢃꢄꢅe ꢊꢘaꢄaꢅꢇeꢄꢈꢗꢇꢈꢅꢗ
100
80
60
40
20
0
400
300
200
100
0
25˚C
125˚C
25˚C
125˚C
V
GS
=
0
V
V
GS
=
0
V
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
ꢍ
SD
ꢁ SꢂꢃꢄꢅeꢆꢇꢂꢆDꢄaꢈꢉ ꢍꢂꢎꢇaꢏe ꢋꢍꢌ
ꢍ
SD
ꢁ SꢂꢃꢄꢅeꢆꢇꢂꢆDꢄaꢈꢉ ꢍꢂꢎꢇaꢏe ꢋꢍꢌ
|
5
eGaN® FET DATASHEET
EPC2100
Fꢀꢁꢂꢃe ꢄa ꢅꢆꢇꢈꢉ
Nꢊꢃꢋaꢌꢀꢍeꢎ ꢏꢐꢑSꢒaꢒe ꢓeꢔꢀꢔꢒaꢐꢕe ꢖꢔꢗ Teꢋꢘeꢃaꢒꢂꢃe
Fꢀꢁꢂꢃe ꢄꢅ ꢆꢇꢈꢉꢊ
Nꢋꢃꢌaꢍꢀꢎeꢏ ꢐꢑꢒSꢓaꢓe ꢔeꢕꢀꢕꢓaꢑꢖe ꢗꢕꢘ Teꢌꢙeꢃaꢓꢂꢃe
2ꢈ0
1ꢈꢉ
1ꢈꢊ
1ꢈꢋ
1ꢈ2
1ꢈ0
0ꢈꢉ
2ꢈ0
1ꢈꢉ
1ꢈꢊ
1ꢈꢋ
1ꢈ2
1ꢈ0
0ꢈꢉ
ꢀ
ꢁ
ꢂ 2ꢃ ꢄ
ꢅ
ꢆꢇ
ꢂ ꢃ ꢅ
ꢀ
ꢁ
ꢂ 2ꢃ ꢄ
ꢅ
ꢆꢇ
ꢂ ꢃ ꢅ
0
2ꢃ
ꢃ0
ꢌꢃ
100
12ꢃ
1ꢃ0
0
2ꢃ
ꢃ0
ꢌꢃ
100
12ꢃ
1ꢃ0
T
ꢙ
ꢚ ꢙꢂꢐꢕꢒꢀꢊꢐ Teꢋꢘeꢃaꢒꢂꢃe ꢅꢛꢜꢈ
T
ꢚ
ꢛ ꢚꢂꢑꢖꢓꢀꢋꢑ Teꢌꢙeꢃaꢓꢂꢃe ꢆꢜꢝꢉ
Fꢀꢁꢂꢃe ꢄꢅa ꢆꢇꢄꢈꢉ
Nꢊꢃꢋaꢌꢀꢍeꢎ Tꢏꢃeꢐꢏꢊꢌꢎ ꢑꢊꢌꢒaꢁe ꢓꢐꢔ Teꢋꢕeꢃaꢒꢂꢃe
Fꢀꢁꢂꢃe ꢄꢅꢆ ꢇꢈꢉꢊꢋ
Nꢌꢃꢍaꢎꢀꢏeꢐ Tꢑꢃeꢒꢑꢌꢎꢐ ꢓꢌꢎꢔaꢁe ꢕꢒꢖ Teꢍꢗeꢃaꢔꢂꢃe
1ꢀꢁ
1ꢀꢂ
1ꢀ2
1ꢀ1
1ꢀ0
0ꢀꢃ
0ꢀꢄ
0ꢀꢅ
0ꢀꢆ
1ꢀꢁ
1ꢀꢂ
1ꢀ2
1ꢀ1
1ꢀ0
0ꢀꢃ
0ꢀꢄ
0ꢀꢅ
0ꢀꢆ
ꢈ
ꢉ
ꢊ ꢁ ꢋꢌ
ꢈ
ꢉ
ꢊ 1ꢆ ꢋꢌ
0
2ꢇ
ꢇ0
ꢅꢇ
100
12ꢇ
1ꢇ0
0
2ꢇ
ꢇ0
ꢅꢇ
100
12ꢇ
1ꢇ0
T
ꢖ
ꢗ ꢖꢂꢘꢙꢒꢀꢊꢘ Teꢋꢕeꢃaꢒꢂꢃe ꢆꢚꢛꢈ
T
ꢘ
ꢙ ꢘꢂꢚꢛꢔꢀꢌꢚ Teꢍꢗeꢃaꢔꢂꢃe ꢇꢜꢝꢊ
Fꢃꢏꢆꢂe ꢝꢝa ꢈꢞꢝꢉꢟ Saꢠe ꢡꢢeꢂaꢇꢃꢄꢏ Aꢂea
Fꢃꢏꢆꢂe ꢝꢝꢞ ꢈꢟꢘꢉꢠ Saꢡe ꢢꢣeꢂaꢇꢃꢄꢏ Aꢂea
1000
100
10
1000
100
10
ꢁꢂꢃꢂꢄꢅꢆ ꢇꢈ ꢉ
ꢊꢋꢌꢍꢎꢏ
ꢁꢂꢃꢂꢄꢅꢆ ꢇꢈ ꢉ
ꢊꢋꢌꢍꢎꢏ
Pꢒꢓꢐꢅ ꢔꢂꢆꢄꢕ
Pꢑꢒꢐꢅ ꢓꢂꢆꢄꢔ
1 ꢃꢐ
2ꢖ0 ꢑꢐ
1 ꢃꢐ
1
1
2ꢕ0 ꢖꢐ
100 ꢑꢐ
10 ꢑꢐ
100 ꢖꢐ
0ꢀ1
0ꢀ1
0ꢀ1
0ꢀ1
1
10
100
1
10
100
ꢊ
DS
ꢁ DꢂaꢃꢄꢋSꢌꢆꢂꢍe ꢊꢌꢎꢇaꢏe ꢈꢊꢉ
T
ꢐ
ꢑ ꢒaꢓ ꢔaꢇeꢕꢖ T
ꢅ
ꢑ ꢗꢘꢙꢚꢅꢖ Sꢃꢄꢏꢎe ꢛꢆꢎꢜe
ꢊ
DS
ꢁ DꢂaꢃꢄꢋSꢌꢆꢂꢍe ꢊꢌꢎꢇaꢏe ꢈꢊꢉ
T
ꢐ
ꢑ ꢒaꢓ ꢔaꢇeꢕꢖ T
ꢅ
ꢑ ꢗꢘꢙꢚꢅꢖ Sꢃꢄꢏꢎe ꢛꢆꢎꢜe
| 6
eGaN® FET DATASHEET
EPC2100
Figure 12a
Transient Thermal
Response Curves
Junction-to-Board
1
0ꢄ1
Duty Cycle:
0.5
0.2
0.1
0.05
0.02
P
DM
t
1
0.01
0ꢄ01
t
2
Notes:
Duty Factor: D = t
1
/t
2
Single Pulse
Peak T
J
= P
DM
x Z
θJB
x R
θJB
+ T
B
0ꢄ001
10
ꢀꢁ
10
ꢀꢂ
10
ꢀꢃ
10
ꢀ2
10
ꢀ1
1
10
1
t
p
, Rectangular Pulse Duration, seconds
Junction-to-Case
Figure 12b
1
0ꢅ1
Transient Thermal
Response Curves
Duty Cycle:
0.5
0.2
0.1
0.05
P
DM
0.02
t
1
0ꢅ01
0.01
Notes:
Duty Factor: D = t
1
/t
2
Peak T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
Single Pulse
0ꢅ001
10
ꢀꢁ
10
ꢀꢂ
10
ꢀꢃ
10
ꢀꢄ
10
ꢀ2
10
ꢀ1
1
t
p
, Rectangular Pulse Duration, seconds
Figure 13
Typical Application Circuit
ꢇ
ꢈꢁ
ꢉ
eGaN
IC
Gaꢀe ꢁꢂꢃꢄeꢂꢅ
ꢆꢇꢈꢀꢂꢇꢉꢉeꢂ
ꢇ
ꢈꢁ
ꢊ
ꢇꢔ
ꢓ
1
ꢀꢃꢄꢅ 1
ꢇ
ꢋꢌꢍ
ꢉ
ꢕꢋ
ꢇꢑ
ꢀꢆ1
ꢇ
ꢑꢒ
ꢇCC
ꢎꢋ
ꢆ
ꢎꢏꢃꢐ
ꢓ
2
ꢀꢃꢄꢅ 2
ꢀꢁꢂ
P
ꢀꢁꢂ
ꢊ
| 7
eGaN® FET DATASHEET
EPC2100
TAꢀE AND ꢁEEꢂ ꢃꢄNFꢅGꢆꢁATꢅꢄN
ꢀꢁꢁ ꢂꢃꢄꢅꢆꢇ 12ꢁꢁ ꢈꢃꢉꢊ ꢄꢋꢂꢊ ꢌꢍ ꢎꢏ ꢐꢊꢊꢑ
ꢙꢌꢋꢉꢊꢉ ꢚꢋꢂꢊ ꢛꢊꢊꢉ ꢒꢃꢐꢊꢅꢄꢃꢌꢍ
ꢜꢋꢄꢊ ꢕꢝꢁꢂꢓ ꢋꢐꢊ ꢋꢑꢌꢍꢞ ꢄꢆꢃꢓ ꢊꢉꢞꢊ ꢌꢗ ꢄꢆꢊ ꢉꢃꢊ
d
e
f
g
7
ꢏ
reel
b
ꢒꢃꢊ
ꢌꢐꢃꢊꢍꢄꢋꢄꢃꢌꢍ
ꢉꢌꢄ
Z Z Z
Z
Y Y Y
2 1 0 0
c
a
Y
ꢒꢃꢊ ꢃꢓ ꢂꢑꢋꢅꢊꢉ ꢃꢍꢄꢌ ꢂꢌꢅꢔꢊꢄ
ꢓꢌꢑꢉꢊꢐ ꢕꢋꢑꢑ ꢓꢃꢉꢊ ꢉꢌꢈꢍ
ꢖꢗꢋꢅꢊ ꢓꢃꢉꢊ ꢉꢌꢈꢍꢘ
EPC2100 (note 1)
Dimension (mm)
target min
max
a
12.00 11.70
12.30
1.75 1.65
1.85
5.50 5.45
5.55
4.00 3.90
4.10
4.00 3.90
4.10
2.00 1.95
2.05
1.50 1.50
1.60
b
c (see
note)
d
e
Note 1: MSL 1 (moisture sensitivity level 1) classiꢀed according to IPC/JEDEC industry standard.
Note 2:
Pocket position is relative to the sprocket hole measured as true position of the pocket,
not the pocket hole.
f (see
note)
g
DIE MARKINGS
Laser Markings
2100
YYYY
ZZZZ
Part
Pꢀꢁꢂ ꢃ
ꢄꢀꢁꢅꢆꢇꢈ ꢉꢆꢇꢊ 1
ꢉꢋꢂꢌꢍꢀꢂꢊ Cꢋꢎꢊ
ꢄꢀꢁꢅꢆꢇꢈ ꢉꢆꢇꢊ 2
ꢉꢋꢂꢌꢍꢀꢂꢊ Cꢋꢎꢊ
ꢄꢀꢁꢅꢆꢇꢈ ꢉꢆꢇꢊ ꢏ
Number
EPC2100
2100
YYYY
ZZZZ
ꢍꢆꢊ ꢋꢁꢆꢊꢇꢂꢀꢂꢆꢋꢇ ꢎꢋꢂ
ꢐꢀꢂꢊ ꢑꢒꢓꢔꢕ ꢀꢁꢊ ꢀꢖꢋꢇꢈ ꢂꢗꢆꢕ ꢊꢎꢈꢊ ꢋꢘ ꢂꢗꢊ ꢎꢆꢊ
| 8
eGaN® FET DATASHEET
EPC2100
DIE OUTLINE
DIM
A
B
c
d
MIN
6020
2270
400
450
210
Nominal
6050
2300
400
450
225
MAX
6080
2330
400
450
240
Solder Bump View
A
40
39
38
37
36
5
4
3
2
1
10
9
15
14
13
12
11
20
19
18
17
16
25
24
23
22
21
30
29
28
27
26
35
34
33
32
31
45
44
43
42
41
50
49
48
47
55
54
53
52
51
60
59
58
57
56
65
64
63
62
61
70
69
68
67
66
75
74
73
72
71
e
f
187
208
240
8
Pad 2 is Gate1 (high side)
;
Pad 4 is Gate2 (low side)
;
Pad 3 is HS Gate Return;
7
6
46
f
Pads 5, 12, 13, 14, 15, 22, 23, 24, 25, 32, 33, 34, 35,
42, 43, 44, 45, 52, 53, 54, 55, 62, 63, 64, 65, 72, 73,
74, 75 are Ground;
e
c
Pads 1, 11, 21, 31, 41, 51, 61, 71 are V
IN
;
Pads 6, 7, 8, 9, 10, 16, 17, 18, 19, 20, 26, 27, 28, 29,
30, 36, 37, 38, 39, 40, 46, 47, 48, 49, 50, 56, 57, 58,
59, 60, 66, 67, 68, 69, 70 are Switch Node
Side View
Seating plane
RECOMMENDED LAND PATTERN
(measurements in µm)
6050
The land pattern is solder mask defined.
Suggest SMD Pads at 200 +20/–10 µm.
190 µm minimum.
1
2
3
4
5
6
7
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
8
9
10
400
RECOMMENDED STENCIL DRAWING
(measurements in µm)
6050
Recommended stencil should be 4 mil (100 µm)
thick, must be laser cut, openings per drawing.
Intended for use with SAC305 Type 4 solder,
reference 88.5% metals content.
225
Additional assembly resources available at:
400
Efficient Power Conversion Corporation (EPC) reserves the right to make changes without further notice to any products herein to
improve reliability, function or design. EPC does not assume any liability arising out of the application or use of any product or circuit
described herein; neither does it convey any license under its patent rights, nor the rights of others.
Information subject to
change without notice.
eGaN® is a registered trademark of Efficient Power Conversion Corporation.
Revised August 2019
| 9
