ETERNAL-EC4953
| Part # | ETERNAL-EC4953 |
Download  | ETERNAL-EC4953 |
Eternal Semiconductor Inc.
EC4953
Dual P-Channel Enhancement-Mode MOSFET (-20V, -4.8A)
PRODUCT SUMMARY
V
DSS
I
D
R
DS(on)
(mΩ)Max
85 @VGS = -2.5V,ID=-2.0A
64 @VGS = -4.5V,ID=-4.8A
-20V
-4.8A
Features
• Super high dense cell trench design for low RDS(on)
• Advanced Trench Process Technology
•
SOT-23-6L package
• Lead
（
Pb
）
-free and halogen-free
6
Pin 1:Gate
1
Pin 2:Soure
2
Pin 3:Gate
2
Pin 4:Drain
2
Pin 5:Source
1
Pin 6:Drain
1
5
4
1
2
3
Absolute Maximum Ratings
(T
A
=25°C, unless otherwise noted)
Parameter
Ratings
Symbol
Units
V
DS
V
GS
I
D
Drain-Source Voltage
Gate-Source Voltage
-20
±12
V
V
Drain Current (Continuous)
Drain Current (Pulsed)
a
-4.8
A
I
DM
P
D
I
S
-18
A
Total Power Dissipation @T
A
=25°C
Maximum Diode Forward Current
1.25
W
-2
A
T
j
, T
stg
Operating Junction and Storage Temperature Range
-55 to +150
60
°C
°C/W
Thermal Resistance Junction to Ambient (PCB mounted)
b
R
QJA
a: Repetitive Rating: Pulse width limited by the maximum junction temperature.
b: 1-in
2
2oz Cu PCB board
DS-EC4953-EN-REV1.0
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Eternal Semiconductor Inc.
EC4953
Electrical Characteristics
(T
A
=25°C, unless otherwise noted)
Characteristic Test
Conditions
Symbol
Min. Typ. Max. Unit
•
Off Characteristics
V
GS
=0V, I
D
=-250uA
BV
DSS
Drain-Source Breakdown Voltage
-20
–
–
–
–
1
V
V
DS
=-18V, V
GS
=0V
V
GS
=±10V, V
DS
=0V
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
–
–
μA
nA
±100
•
On Characteristics
V
DS
=V
GS
, I
D
=-250uA
V
GS
=-4.5V, I
D
=-4.8A
V
GS
=-2.5V, I
D
=-2A
V
GS(th)
Gate Threshold Voltage
-0.4
-0.7
-0.9
64
V
–
–
–
–
Drain-Source On-State
R
DS(on)
mΩ
Resistance
85
•
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
–
–
–
520
86
–
–
–
V
DS
=-6V, V
GS
=0V, f=1MHz
Output Capacitance
PF
Reverse Transfer Capacitance
63
•
Switching Characteristics
Q
g
Q
gs
Q
gd
t
d(on)
t
r
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
–
–
–
–
–
–
–
6.5
0.39
1.2
9.6
3.3
32
–
–
–
–
–
–
–
V
DS
=-6V, I
D
=-2.8A, V
GS
=-4.5V
nC
nS
V
DD
=-6V, R
L
=6Ω, I
D
=1A,
VGEN=-4.5V, RG=6Ω
t
d(off)
t
f
4.8
•
Drain-Source Diode Characteristics
Drain-Source Diode Forward
Voltage
V
GS
=0V, I
S
=-1A
V
SD
–
–
-1.2
V
Note: Pulse Test: Pulse Width
≤
300us, Duty Cycle
≤
2%
Switching Test Circuit and Swithcing Waveforms
DS-EC4953-EN-REV1.0
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Eternal Semiconductor Inc.
EC4953
Typical Characteristics Curves
(Ta=25°C, unless otherwise note)
DS-EC4953-EN-REV1.0
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Eternal Semiconductor Inc.
EC4953
EC4953 PACKAGE OUTLINE DIMENSIONS
DS-EC4953-EN-REV1.0
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