ETERNAL-EN2300
| Part # | ETERNAL-EN2300 |
Download  | ETERNAL-EN2300 |
Eternal Semiconductor Inc.
EN2300
N-Channel High Density Trench MOSFET (20V, 5.4A)
PRODUCT SUMMARY
V
DSS
I
D
R
DS(on)
(mΩ) Tpy.
23 @ VGS = 4.0V, ID=5.4A
30 @ VGS = 2.5V, ID=4.3A
20V
5.4A
Features
• Super high dense cell trench design for low RDS(on)
• Advanced Trench Process Technology
•
SOT-23 package
•
Lead
（
Pb
）
-free and halogen-free
Drain
EN2300 Pin Assignment & Symbol
3-Lead Plastic SOT-23
Gate
Pin 1: Gate
Pin 2: Source
Pin3: Drain
Source
Absolute Maximum Ratings
(T
A
=25°C, unless otherwise noted)
Parameter
Ratings
Symbol
Units
V
DS
V
GS
I
D
Drain-Source Voltage
Gate-Source Voltage
20
±12
V
V
Drain Current (Continuous)
Drain Current (Pulsed)
a
5.4
A
I
DM
P
D
I
S
24
A
Total Power Dissipation @T
A
=25°C
Maximum Diode Forward Current
1.25
W
1.7
A
T
j
, T
stg
Operating Junction and Storage Temperature Range
-55 to +150
140
°C
°C/W
Thermal Resistance Junction to Ambient (PCB mounted)
b
R
QJA
a: Repetitive Rating: Pulse width limited by the maximum junction temperature.
b: 1-in
2
2oz Cu PCB board
DS-EN2300-EN-REV1.0
Page 1 of 5
Eternal Semiconductor Inc.
EN2300
Electrical Characteristics
(T
A
=25°C, unless otherwise noted)
Characteristic Test
Conditions
Symbol
Min. Typ. Max. Unit
•
Off Characteristics
V
GS
=0V, I
D
=250uA
BV
DSS
Drain-Source Breakdown Voltage
20
–
–
V
V
DS
=20V, V
GS
=0V
V
GS
=±12V, V
DS
=0V
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
–
–
–
–
1
μA
±100
nA
•
On Characteristics
V
DS
=V
GS
, I
D
=250uA
V
GS
=4.5V, I
D
=2.8A
V
GS(th)
Gate Threshold Voltage
0.4
–
0.65
23
1.0
30
V
Drain-Source On-State
R
DS(on)
mΩ
Resistance
V
GS
=2.5V, I
D
=2A
–
30
40
•
Dynamic Characteristics
C
iss
Input Capacitance
–
–
522
136
–
–
C
oss
Output Capacitance
V
DS
=6V, V
GS
=0V, f=1MHz
PF
C
rss
Reverse Transfer Capacitance
–
112
–
•
Switching Characteristics
Q
g
Q
gs
Q
gd
t
d(on)
t
r
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
–
–
–
–
–
–
–
5
–
–
–
–
–
–
–
V
DS
=6V, I
D
=5.4A, V
GS
=4.5V
nC
nS
V
0.9
1.4
10.9
4.1
22.2
5.8
V
DD
=-6V, R
L
=6Ω, I
D
=1A,
VGEN=4.5V, RG=6Ω
t
d(off)
t
f
•
Drain-Source Diode Characteristics
Drain-Source Diode Forward
V
GS
=0V, I
S
=1.7A
V
SD
–
–
1.2
Note: Pulse Test: Pulse Width
≤
300us, Duty Cycle
≤
2%
DS-EN2300-EN-REV1.0
Page 2 of 5
Eternal Semiconductor Inc.
EN2300
Typical Characteristics Curves
(Ta=25°C, unless otherwise note)
DS-EN2300-EN-REV1.0
Page 3 of 5
Eternal Semiconductor Inc.
EN2300
SOT-23L PACKAGE OUTLINE DIMENSIONS
DS-EN2300-EN-REV1.0
Page 5 of 5
