ETERNAL-EN2305
| Part # | ETERNAL-EN2305 |
Download  | ETERNAL-EN2305 |
Eternal Semiconductor Inc.
EN2305
P-Channel Enhancement-Mode MOSFET (-20V, -4.9A)
PRODUCT SUMMARY
V
DSS
I
D
R
DS(on)
(m
Ω
) Typ.
34 @ VGS = -4.5 V,ID=-4.5A
44 @
VGS = -2.5V,ID=-2.5A
-20V
-4.9A
Features
• Super high dense cell trench design for low RDS(on)
• Rugged and reliable
· SOT-23 package
•
Lead
（
Pb
）
-free and halogen-free
EN2305 Pin Assignment & Symbol
3-Lead Plastic SOT-23
Pin 1: Gate
Pin 2: Source
Pin3: Drain
Absolute Maximum Ratings
(T
A
=25°C, unless otherwise noted)
Symbol
Parameter
Ratings
Units
V
DS
V
GS
I
D
Drain-Source Voltage
Gate-Source Voltage
-20
±12
V
V
Drain Current (Continuous)
Drain Current (Pulsed)
a
-4.9
A
I
DM
P
D
I
S
-15
A
Total Power Dissipation @T
A
=25°C
Maximum Diode Forward Current
1.7
W
-4.9
A
T
j
, T
stg
Operating Junction and Storage Temperature Range
Thermal Resistance Junction to Ambient (PCB mounted)
b
R
QJA
-55 to +150
75
°C
°C/W
a: Repetitive Rating: Pulse width limited by the maximum junction temperature.
b: 1-in
2
2oz Cu PCB board
DS-EN2305-EN-REV1.0
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Eternal Semiconductor Inc.
EN2305
Electrical Characteristics
(T
A
=25°C, unless otherwise noted)
Symbol
Characteristic
Test Conditions
Min. Typ. Max. Unit
•
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage V
GS
=0V, I
D
=-250uA
-20
–
–
V
I
DSS
I
GSS
Zero Gate Voltage Drain Current
V
DS
=-20V, V
GS
=0V
–
–
–
–
1
μ
A
Gate-Body Leakage Current
V
GS
=±12V, V
DS
=0V
±100
nA
•
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=-250uA
-0.45
–
-1
45
60
V
V
GS
=-4.5V, I
D
=-4.9A
GS
=-2.5V, I
D
=-3A
34
44
Drain-Source On-State
R
DS(on)
m
Ω
Resistance
V
•
Dynamic Characteristics
C
iss
Input Capacitance
–
–
740
290
–
–
C
oss
Output Capacitance
V
DS
=-10V, V
GS
=0V, f=1MHz
V
DS
=-10V, I
D
=-1A, V
GS
=-4.5V
PF
C
rss
Reverse Transfer Capacitance
–
190
–
•
Switching Characteristics
Q
g
Q
gs
Q
gd
t
d(on)
t
r
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
–
–
–
–
–
–
–
7.8
1.2
1.6
12
–
–
–
–
–
–
–
nC
nS
V
35
V
DD
=-4V, R
L
=1.2
Ω
, I
D
=1A,
VGEN=-4.5V, RG=1
Ω
t
d(off)
t
f
30
10
•
Drain-Source Diode Characteristics
Drain-Source Diode Forward
V
SD
V
GS
=0V, I
S
=-1A
–
–
-1.2
Note: Pulse Test: Pulse Width
≤
300us, Duty Cycle
≤
2%
Switching Test Circuit and Swithcing Waveforms
DS-EN2305-EN-REV1.0
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Eternal Semiconductor Inc.
EN2305
Typical Characteristics Curves
(Ta=25°C, unless otherwise note)
DS-EN2305-EN-REV1.0
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Eternal Semiconductor Inc.
EN2305
SOT-23 PACKAGE OUTLINE DIMENSIONS
DS-EN2305-EN-REV1.0
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