ETERNAL-ES4812

Eternal Semiconductor Inc.  

ES4812  

Dual N-Channel High Density Trench MOSFET (30V, 6.9A)  

PRODUCT SUMMARY  

V

DSS  

I

D  

R

DS(on)

(mΩ) Typ.  

24 @ VGS = 10V, ID=6.9A  

30 @ VGS = 4.5V, ID=5.8A  

30V  

6.9A  

Features  

• Super high density cell design for extremely low RDS(ON)  

• Exceptional on-resistance and maximum DC current capability  

• Lead

（

Pb

）

-free and halogen-free  

TOP Marking  

4 8 1 2  

XXXXXX  

XXXXXX:D/C  

Absolute Maximum Ratings

(T

A

=25°C, unless otherwise noted)  

Parameter  

Ratings  

Symbol  

Units  

V

DS  

V

GS  

Drain-Source Voltage  

Gate-Source Voltage  

30  

V

V

±20  

Drain Current (Continuous)@TA=25°C  

6.9  

A

I

D  

I

DM  

P

D  

I

S  

Drain Current (Continuous)@TA=75°C  

Drain Current (Pulsed)

a  

5.4  

A

30  

A

Total Power Dissipation @T

A

=25°C  

2

1.3  

W

W

A

Total Power Dissipation @T

A

=75°C  

Maximum Diode Forward Current  

1.7  

T

j

, T

stg

Operating Junction and Storage Temperature Range  

-55 to +150  

62  

°C  

°C/W  

Thermal Resistance Junction to Ambient (PCB mounted)

b  

R

QJA  

a: Repetitive Rating: Pulse width limited by the maximum junction temperature.  

b: 1-in

2

2oz Cu PCB board  

DS-ES4812-EN-REV1.0  

Page 1 of 5  

Eternal Semiconductor Inc.  

ES4812  

Electrical Characteristics

(T

A

=25°C, unless otherwise noted)  

Characteristic  

Test Conditions  

Symbol  

Min. Typ. Max. Unit  

•

Off Characteristics  

BV

DSS

Drain-Source Breakdown Voltage  

V

GS

=0V, I

D

=250uA  

30  

–

–

V

V

DS

=30V, V

GS

=0V  

V

GS

=±20V, V

DS

=0V  

I

DSS  

I

GSS  

Zero Gate Voltage Drain Current  

Gate-Body Leakage Current  

–

–

–

–

1

μA  

±100  

nA  

•

On Characteristics  

V

DS

=V

GS

, I

D

=250uA  

V

GS

=4.5V, I

D

=5.8A  

V

GS(th)

Gate Threshold Voltage  

1.0  

–

1.7  

30  

2.0  

40  

V

Drain-Source On-State  

R

DS(on)  

mΩ  

Resistance  

V

GS

=10V, I

D

=6.9A  

–

24  

26  

•

Dynamic Characteristics  

C

iss  

Input Capacitance  

–

–

610  

100  

–

–

C

oss  

Output Capacitance  

V

DS

=15V, V

GS

=0V, f=1MHz  

PF  

C

rss  

Reverse Transfer Capacitance  

–

78  

–

•

Switching Characteristics  

Q

g  

Q

gs  

Q

gd  

t

d(on)  

t

r  

Total Gate Charge  

Gate-Source Charge  

Gate-Drain Charge  

Turn-on Delay Time  

Turn-on Rise Time  

Turn-off Delay Time  

Turn-off Fall Time  

–

–

–

–

–

–

–

13  

4.2  

3.1  

10  

15  

31  

6

–

–

–

–

–

–

–

V

DS

=15V, I

D

=6.9A, V

GS

=10V  

nC  

nS  

V

V

DD

=15V, R

L

=15Ω, I

D

=1A,  

V

GEN

=10V, RG=6Ω  

t

d(off)  

t

f  

•

Drain-Source Diode Characteristics  

Drain-Source Diode Forward  

V

GS

=0V, I

S

=2.0A  

V

SD  

–

–

1.2  

Note: Pulse Test: Pulse Width

≤

300us, Duty Cycle

≤

2%  

DS-ES4812-EN-REV1.0  

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Eternal Semiconductor Inc.  

ES4812  

Typical Characteristics Curves

(Ta=25°C, unless otherwise note)  

DS-ES4812-EN-REV1.0  

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Eternal Semiconductor Inc.  

ES4812  

DS-ES4812-EN-REV1.0  

Page 4 of 5  

Eternal Semiconductor Inc.  

ES4812  

ES9926 PACKAGE OUTLINE DIMENSIONS  

DS-ES4812-EN-REV1.0  

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