ETERNAL-ET2315
| Part # | ETERNAL-ET2315 |
Download  | ETERNAL-ET2315 |
Eternal Semiconductor Inc.
P-Channel Enhancement-Mode MOSFET (-20V, -5.9A)
PRODUCT SUMMARY
V
DSS
I
D
R
DS(on)
(mΩ)TYP
17.5 @ VGS = -4.5 V,ID=-5.9A
22.0 @ VGS = -2.5V,ID=-3.0A
-20V
-5.9A
32.0 @ VGS = -1.8V,ID=-1.5A
Features
• Super high dense cell trench design for low RDS(on)
• Rugged and reliable
•
SOT-23-3L package
•
Lead
（
Pb
）
-free and halogen-free
ET2315 Pin Assignment & Symbol
3-Lead Plastic SOT-23-3L
Pin 1: Gate
Pin 2: Source
Pin3: Drain
Absolute Maximum Ratings
(T
A
=25°C, unless otherwise noted)
Parameter
Ratings
Symbol
Units
V
DS
V
GS
I
D
Drain-Source Voltage
Gate-Source Voltage
-20
±12
V
V
Drain Current (Continuous)
Drain Current (Pulsed)
a
-5.9
A
I
DM
P
D
I
S
-24
A
Total Power Dissipation @T
A
=25°C
Maximum Diode Forward Current
1.7
W
-1
A
T
j
, T
stg
Operating Junction and Storage Temperature Range
-55 to +150
75
°C
°C/W
Thermal Resistance Junction to Ambient (PCB mounted)
b
R
QJA
a: Repetitive Rating: Pulse width limited by the maximum junction temperature.
b: 1-in
2
2oz Cu PCB board
DS-ET2315-EN-REV1.2
Page 1 of 5
Eternal Semiconductor Inc.
Electrical Characteristics
(T
A
=25°C, unless otherwise noted)
Characteristic
Test Conditions
Symbol
Min. Typ. Max. Unit
•
Off Characteristics
V
GS
=0V, I
D
=-250uA
BV
DSS
Drain-Source Breakdown Voltage
-20
–
–
V
V
DS
=-20V, V
GS
=0V
V
GS
=±12V, V
DS
=0V
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
–
–
–
–
1
μA
±100
nA
•
On Characteristics
V
DS
=V
GS
, I
D
=-250uA
V
GS
=-4.5V, I
D
=-5.9A
V
GS
=-2.5V, I
D
=-3A
V
GS
=-1.8V, I
D
=1.5A
V
GS(th)
Gate Threshold Voltage
-0.45
–
-1
21
26
38
V
17.5
22.0
32.0
Drain-Source On-State
R
DS(on)
mΩ
Resistance
–
•
Dynamic Characteristics
C
iss
Input Capacitance
–
–
2310
225
–
–
C
oss
Output Capacitance
V
DS
=-10V, V
GS
=0V, f=1MHz
V
DS
=-10V, I
D
=-1A, V
GS
=-10V
PF
C
rss
Reverse Transfer Capacitance
–
210
–
•
Switching Characteristics
Q
g
Q
gs
Q
gd
t
d(on)
t
r
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
–
–
–
–
–
–
–
28.4
3.8
7.5
9.5
56
–
–
–
–
–
–
–
nC
nS
V
V
DD
=-10V, R
L
=15Ω, I
D
=1A,
VGEN=-4.5V, RG=10Ω
t
d(off)
t
f
86
78
•
Drain-Source Diode Characteristics
Drain-Source Diode Forward
V
GS
=0V, I
S
=-1A
V
SD
–
–
-1.2
Note: Pulse Test: Pulse Width
≤
300us, Duty Cycle
≤
2%
Switching Test Circuit and Swithcing Waveforms
DS-ET2315-EN-REV1.2
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Eternal Semiconductor Inc.
Typical Characteristics Curves
(Ta=25°C, unless otherwise note)
Fig.2 On-Resistance vs. Gate-Source
Fig.1 -V
DS
,Drain-to-Soutce Voltage
Fig.3 Forward Characterlstlcs of Reverse
Fig.4 Gate-Charge Characteristics
Fig.6
Normalized R
DSON
vs. T
J
Fig.5 Normalized V
GS
(th) vs.T
J
DS-ET2315-EN-REV1.2
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Eternal Semiconductor Inc.
Fig.7 Capacitance
Fig.8 Safe Operating Area
Fig.9 Normalized Maximum Transient Thermal Impedance
DS-ET2315-EN-REV1.2
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Eternal Semiconductor Inc.
SOT23-3L PACKAGE OUTLINE DIMENSIONS
DS-ET2315-EN-REV1.2
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