ETERNAL-ET2321
| Part # | ETERNAL-ET2321 |
Download  | ETERNAL-ET2321 |
Eternal Semiconductor Inc.
P-Channel Enhancement-Mode MOSFET (-20V, -8A)
PRODUCT SUMMARY
V
DSS
I
D
R
DS(on)
(mΩ) Typ.
22 @ VGS = -4.5 V,ID=-8A
29 @ VGS = -2.5V,ID=-4.5A
-20V
-8A
45 @ VGS = -1.8V,ID=-1.5A
Features
• Super high dense cell trench design for low RDS(on)
• Rugged and reliable
•
DFN2*2-6L Package
•
Lead
（
Pb
）
-free and halogen-free
ET2321 Pin Assignment & Symbol
6-Lead Plastic DFN2*2-6L
Pin 1/2/5/6:Drain Pin 4: Source
Pin3:
Gate
D
D
S
S
D
D
G
Absolute Maximum Ratings
(T
A
=25°C, unless otherwise noted)
Parameter
Ratings
Symbol
Units
V
DS
V
GS
I
D
Drain-Source Voltage
Gate-Source Voltage
-20
V
V
±12
Drain Current (Continuous)
Drain Current (Pulsed)
a
-8
A
I
DM
P
D
I
S
-32
A
Total Power Dissipation @T
A
=25°C
Maximum Diode Forward Current
2.5
W
-1
-55 to +150
75
A
T
j
, T
stg
Operating Junction and Storage Temperature Range
°C
°C/W
Thermal Resistance Junction to Ambient (PCB mounted)
b
R
QJA
a: Repetitive Rating: Pulse width limited by the maximum junction temperature.
b: 1-in
2
2oz Cu PCB board
DS-ET2321-EN-REV1.0
Page 1 of 5
Eternal Semiconductor Inc.
Electrical Characteristics
(T
A
=25°C, unless otherwise noted)
Characteristic
Test Conditions
Symbol
Min. Typ. Max. Unit
•
Off Characteristics
V
GS
=0V, I
D
=-250uA
BV
DSS
Drain-Source Breakdown Voltage
-20
–
–
V
V
DS
=-20V, V
GS
=0V
V
GS
=±12V, V
DS
=0V
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
–
–
–
–
1
μA
±100
nA
•
On Characteristics
V
DS
=V
GS
, I
D
=-250uA
V
GS
=-4.5V, I
D
=-8A
V
GS
=-2.5V, I
D
=-4.5A
V
GS
=-1.8V, I
D
=-1.5A
V
GS(th)
Gate Threshold Voltage
-0.45 -0.65
-1
28
38
56
V
–
22
29
45
Drain-Source On-State
R
DS(on)
mΩ
Resistance
–
•
Dynamic Characteristics
C
iss
Input Capacitance
–
–
2100
497
–
–
C
oss
Output Capacitance
V
DS
=-10V, V
GS
=0V, f=1MHz
V
DS
=-10V, I
D
=-1A, V
GS
=-10V
PF
C
rss
Reverse Transfer Capacitance
–
289
–
•
Switching Characteristics
Q
g
Q
gs
Q
gd
t
d(on)
t
r
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
–
–
–
–
–
–
–
18
4.2
4.5
25
33
56
46
–
–
–
–
–
–
–
nC
nS
V
V
DD
=-10V, R
L
=15Ω, I
D
=1A,
VGEN=-4.5V, RG=10Ω
t
d(off)
t
f
•
Drain-Source Diode Characteristics
Drain-Source Diode Forward
V
GS
=0V, I
S
=-1A
V
SD
–
–
-1.2
Note: Pulse Test: Pulse Width
≤
300us, Duty Cycle
≤
2%
Switching Test Circuit and Swithcing Waveforms
DS-ET2321-EN-REV1.0
Page 2 of 5
Eternal Semiconductor Inc.
Typical Characteristics Curves
(Ta=25°C, unless otherwise note)
DS-ET2321-EN-REV1.0
Page 3 of 5
Eternal Semiconductor Inc.
DFN2*2-6L PACKAGE OUTLINE DIMENSIONS
DS-ET2321-EN-REV1.0
Page 5 of 5
