ETERNAL-ET2N7002K

Eternal Semiconductor Inc.  

ET2N7002K  

N-Channel High Density Trench MOSFET (60V,0.5A)  

PRODUCT SUMMARY  

V

DSS  

I

D  

R

DS(on)

(m

Ω

)Typ  

2.5 @ VGS = 10V, ID=0.5A  

3.0 @ VGS = 5V, ID=0.05A  

60V  

500mA  

Features  

• High speed switch  

• Advanced Trench Process Technology  

•

SOT-23 package  

•

ESD protected up to 2KV  

•

Lead

（

Pb

）

-free and halogen-free  

Drain  

ET2N7002K Pin

 

Assignment & Symbol  

3-Lead Plastic SOT-23  

Gate  

Pin 1: Gate

 

Pin 2: Source

 

Pin3: Drain  

Source  

Absolute Maximum Ratings

(T

A

=25°C, unless otherwise noted)  

Parameter  

Ratings  

Symbol  

Units  

V

DS  

V

GS  

I

D  

Drain-Source Voltage  

Gate-Source Voltage  

60  

±15  

0.2  

0.8  

0.3  

0.5  

V

V

Drain Current (Continuous)  

Drain Current (Pulsed)

a  

A

I

DM  

P

D  

I

S  

A

Total Power Dissipation @T

A

=25°C  

Maximum Diode Forward Current  

W

A

T

j

, T

stg

Operating Junction and Storage Temperature Range  

-55 to +150  

357  

°C  

°C/W  

Thermal Resistance Junction to Ambient (PCB mounted)

b  

R

QJA  

a: Repetitive Rating: Pulse width limited by the maximum junction temperature.  

b: 1-in

2

2oz Cu PCB board  

DS-EN2N7002K-EN-REV1.0  

Page 1 of 4  

Eternal Semiconductor Inc.  

ET2N7002K  

Electrical Characteristics

(T

A

=25°C, unless otherwise noted)  

Characteristic Test

 

Conditions  

Symbol  

Min. Typ.

 

Max. Unit  

•

Off Characteristics  

V

GS

=0V, I

D

=10uA  

BV

DSS

Drain-Source Breakdown Voltage  

60  

–

–

V

V

DS

=60V, V

GS

=0V  

V

GS

=±15V, V

DS

=0V  

I

DSS  

I

GSS  

Zero Gate Voltage Drain Current  

Gate-Body Leakage Current  

–

–

–

–

1

μ

A  

μ

A  

±1  

•

On Characteristics  

V

DS

=V

GS

, I

D

=250uA  

V

GS

=10V, I

D

=0.5A  

V

GS(th)

Gate Threshold Voltage  

1.35  

–

–

0

V

2.5  

4.0  

Drain-Source On-State  

R

DS(on)  

Ω

Resistance  

V

GS

=5V, I

D

=0.05A  

–

3.0  

4.0  

•

Dynamic Characteristics  

C

iss  

Input Capacitance  

–

–

–

–

60  

30  

C

oss  

Output Capacitance  

V

DS

=25V, V

GS

=0V, f=1MHz  

PF  

C

rss  

Reverse Transfer Capacitance  

–

–

10  

•

Switching Characteristics  

t

d(on)  

Turn-on Delay Time  

–

–

–

–

15  

15  

V

DD

=15V, R

L

=23

Ω

, I

D

=0.5A,  

VGEN=10V, RG=25

Ω  

nS  

V

t

d(off)  

Turn-off Delay Time  

•

Drain-Source Diode Characteristics  

Drain-Source Diode Forward  

V lt  

V

GS

=0V, I

S

=0.2A  

V

SD  

–

–

2.5  

Note: Pulse Test: Pulse Width

≤

300us, Duty Cycle

≤

2%  

DS-EN2N7002K-EN-REV1.0  

Page 2 of 4  

Eternal Semiconductor Inc.  

ET2N7002K  

Typical Characteristics Curves

(Ta=25°C, unless otherwise note)  

DS-EN2N7002K-EN-REV1.0  

Page 3 of 4  

Eternal Semiconductor Inc.  

ET2N7002K  

SOT-23 PACKAGE OUTLINE DIMENSIONS  

DS-EN2N7002K-EN-REV1.0  

Page 4 of 4