ETERNAL-ET6310

Eternal Semiconductor Inc.  

ET6310  

N-Channel High Density Trench MOSFET (30V, 85A)  

PRODUCT SUMMARY  

V

DSS  

I

D  

R

DS(on)

(mΩ) Typ.  

2.7 @ VGS = 4.5V, ID=20A  

30V  

85  

Features  

• Super high density cell design for extremely low RDS(ON)  

• Low gate charge  

• Exceptional on-resistance and maximum DC current capability  

• Lead

（

Pb

）

-free and halogen-free  

Applications  

• DC/DC Converters in Computing, Servers, and POL  

• Isolated DC/DC Converters in Telecom and Industrial  

TOP Marking  

ET6310  

XXXXXX  

XXXXXX:D/C  

Absolute Maximum Ratings

(T

A

=25°C, unless otherwise noted)  

Parameter  

Ratings  

Symbol  

Units  

V

DS  

V

GS  

Drain-Source Voltage  

Gate-Source Voltage  

30  

V

V

±20  

Drain Current (Continuous)@TA=25°C  

85  

A

I

D  

Drain Current (Continuous)@TA=75°C  

66  

A

Drain Current (Pulsed)

a  

I

DM  

P

D  

300  

A

Total Power Dissipation @T

A

=25°C  

80  

W

W

mj  

A

Total Power Dissipation @T

A

=75°C  

Avalanche energy

，

single pulsed

b  

30  

50  

85  

EAS  

I

S  

Maximum Diode Forward Current  

T

j

, T

stg

Operating Junction and Storage Temperature Range  

-55 to +150  

33  

°C  

°C/W  

Thermal Resistance Junction to Ambient (PCB mounted)

c  

R

QJA  

a: Repetitive Rating: Pulse width limited by the maximum junction temperature.  

b: Limited by TJmax, starting TJ = 25°C, L = 0.05mH,RG = 25Ω, IAS = 85A, VGS =10V. Part not recommended for use above this value  

c: 1-in2 2oz Cu PCB board  

DS-ET6310-EN-REV1.2  

Page 1 of 5  

Eternal Semiconductor Inc.  

ET6310  

Electrical Characteristics

(T

A

=25°C, unless otherwise noted)  

Characteristic  

Test Conditions  

Symbol  

Min. Typ. Max. Unit  

•

Off Characteristics  

BV

DSS

Drain-Source Breakdown Voltage  

V

GS

=0V, I

D

=250uA  

30  

–

–

V

V

DS

=30V, V

GS

=0V  

V

GS

=±20V, V

DS

=0V  

I

DSS  

I

GSS  

Zero Gate Voltage Drain Current  

Gate-Body Leakage Current  

–

–

–

–

1

μA  

±100  

nA  

•

On Characteristics  

V

DS

=V

GS

, I

D

=250uA  

V

GS

=10V, I

D

=20A  

V

GS(th)

Gate Threshold Voltage  

1.0  

–

1.7  

1.9  

2.4  

2.2  

V

Drain-Source On-State  

R

DS(on)  

mΩ  

Resistance  

V

GS

=4.5V, I

D

=20A  

–

2.7  

3.0  

•

Dynamic Characteristics  

C

iss  

Input Capacitance  

–

–

3500  

1320  

–

–

C

oss  

Output Capacitance  

V

DS

=15V, V

GS

=0V, f=1MHz  

PF  

C

rss  

Reverse Transfer Capacitance  

–

182  

–

•

Switching Characteristics  

Q

g  

Q

gs  

Q

gd  

t

d(on)  

t

r  

Total Gate Charge  

Gate-Source Charge  

Gate-Drain Charge  

Turn-on Delay Time  

Turn-on Rise Time  

Turn-off Delay Time  

Turn-off Fall Time  

–

–

–

–

–

–

–

55  

8.2  

12  

–

–

–

–

–

–

–

V

DS

=15V, I

D

=20A, V

GS

=10V  

nC  

nS  

V

7.6  

5.2  

34  

V

DD

=15V, R

L

=15Ω, I

D

=1A,  

V

GEN

=10V, RG=6Ω  

t

d(off)  

t

f  

10  

•

Drain-Source Diode Characteristics  

Drain-Source Diode Forward  

V

GS

=0V, I

S

=20A  

V

SD  

–

0.8  

1.2  

Note: Pulse Test: Pulse Width

≤

300us, Duty Cycle

≤

2%  

DS-ET6310-EN-REV1.2  

Page 2 of 5  

Eternal Semiconductor Inc.  

ET6310  

Typical Characteristics Curves

(Ta=25°C, unless otherwise note)  

DS-ET6310-EN-REV1.2  

Page 3 of 5  

Eternal Semiconductor Inc.  

ET6310  

DS-ET6310-EN-REV1.2  

Page 4 of 5  

Eternal Semiconductor Inc.  

ET6310  

PDFN5*6 EP1 Package Outline Data  

Symbol  

Dimensions

（

unit

：

mm)  

Max  

Min  

TYP  

A

A3  

D

0.90  

1.0  

0.254REF  

5.00  

4.94  

5.97  

3.91  

3.37  

4.82  

5.67  

1.19  

0.35  

5.1  

6.1  

4.1  

3.6  

5

5.8  

1.4  

0.45  

E

6.00  

D1  

E1  

D2  

E2  

k

4.00  

3.50  

4.90  

5.70  

1.30  

b

0.35  

1.27TYP  

e

L

L1  

H

0.71  

0.58  

0.73  

12

O  

0.56  

0.52  

0.57  

10

O  

0.65  

0.55  

0.60  

11

O  

θ

DS-ET6310-EN-REV1.2  

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