ETERNAL-ET8818
| Part # | ETERNAL-ET8818 |
Download  | ETERNAL-ET8818 |
Eternal Semiconductor Inc.
ET8818
Dual N-Channel Enhancement-Mode MOSFET (20V,10A)
PRODUCT SUMMARY
V
DSS
I
D
R
DS(on)
(mΩ) Typ
7.2 @ VGS =4.5V, ID=10A
7.5 @
VGS = 4.0V, ID=5A
11@ VGS = 2.5V, ID=2.5A
20V
10A
Features
• Super high density cell design for extremely low RDS(ON)
• Exceptional on-resistance and maximum DC current capability
• ESD Rating:2000V HBMꢀ
• Lead
（
Pb
）
-free and halogen-free
ET8818
XXXXXX
Marking
DFN2x3-6L_ top view
Absolute Maximum Ratings
(T
A
=25°C, unless otherwise noted)
Parameter
Ratings
Symbol
Units
V
DS
V
GS
Drain-Source Voltage
Gate-Source Voltage
20
V
V
±12
Drain Current (Continuous)@TA=25°C
Drain Current (Continuous)@TA=75°C
10
A
I
D
8
A
Drain Current (Pulsed)
a
I
DM
P
D
32
1.5
A
Total Power Dissipation @T
A
=25°C
W
Total Power Dissipation @T
A
=75°C
1.2
W
T
j
, T
stg
Operating Junction and Storage Temperature Range
-55 to +150
80
°C
°C/W
Thermal Resistance Junction to Ambient (PCB mounted)
b
R
QJA
a: Repetitive Rating: Pulse width limited by the maximum junction temperature.
b: 1-in
2
2oz Cu PCB board
DS-ET8818-EN-REV2.0
Page 1 of 5
Eternal Semiconductor Inc.
ET8818
Electrical Characteristics
(T
A
=25°C, unless otherwise noted)
Characteristic
Test Conditions
Symbol
Min. Typ. Max. Unit
•
Off Characteristics
V
GS
=0V, I
D
=250uA
BV
DSS
Drain-Source Breakdown Voltage
20
–
–
V
V
DS
=20V, V
GS
=0V
V
GS
=±12V, V
DS
=0V
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
–
–
–
–
1
μA
±100
nA
•
On Characteristics
V
DS
=V
GS
, I
D
=250uA
V
GS
=4.5V, I
D
=10A
V
GS(th)
Gate Threshold Voltage
0.5
6
0.7
7.2
1.0
8.9
V
Drain-Source On-State
R
DS(on)
V
GS
=4.0V, I
D
=5A
V
GS
=2.5V, I
D
=2.5A
V
DS
=10V, I
D
=5A
mΩ
6.3
10.3
5
7.5
11
–
9.2
12.5
–
Resistance
Forward Transconductance
s
g
FS
•
Dynamic Characteristics
C
iss
Input Capacitance
–
–
1265
225
–
–
C
oss
Output Capacitance
V
DS
=10V, V
GS
=0V, f=1MHz
V
DS
=15V, I
D
=20A, V
GS
=10V
PF
C
rss
Reverse Transfer Capacitance
–
155
–
•
Switching Characteristics
Q
g
Q
gs
Q
gd
t
d(on)
t
r
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
–
–
–
–
–
–
–
29
5.2
–
–
–
–
–
–
–
nC
nS
V
6.3
300
1000
4000
2500
V
DD
=15V, R
L
=15Ω, I
D
=20A,
V
GEN
=10V, RG=6Ω
t
d(off)
t
f
•
Drain-Source Diode Characteristics
Drain-Source Diode Forward
V
GS
=0V, I
S
=10A
V
SD
–
0.85
1.2
Note: Pulse Test: Pulse Width
≤
300us, Duty Cycle
≤
2%
DS-ET8818-EN-REV2.0
Page 2 of 5
Eternal Semiconductor Inc.
ET8818
Typical Characteristics Curves
(Ta=25°C, unless otherwise note)
DS-ET8818-EN-REV2.0
Page 3 of 5
Eternal Semiconductor Inc.
ET8818
DFN2*3-6L PACKAGE OUTLINE DIMENSIONS
DS-ET8818-EN-REV2.0
Page 5 of 5
