ETERNAL-EV3404
| Part # | ETERNAL-EV3404 |
Download  | ETERNAL-EV3404 |
Eternal Semiconductor Inc.
EV3404
N-Channel Enhancement-Mode MOSFET (30V, 5.8A)
PRODUCT SUMMARY
V
DSS
I
D
R
DS(on)
(mΩ)Typ.
25 @ VGS = 10 V,ID=5.8A
30V
5.8A
Features
• Super high dense cell trench design for low RDS(on)
• Rugged and reliable
•
SOT-23-3L package
• Lead
（
Pb
）
-free and halogen-free
EV3404 Pin Assignment & Symbol
3-Lead Plastic SOT-23-3L
Pin 1: Gate
Pin 2: Source
Pin3: Drain
Absolute Maximum Ratings
(T
A
=25°C, unless otherwise noted)
Parameter
Ratings
Symbol
Units
V
DS
V
GS
I
D
Drain-Source Voltage
Gate-Source Voltage
30
±20
V
V
Drain Current (Continuous)
Drain Current (Pulsed)
a
5.8
A
I
DM
P
D
20
A
Total Power Dissipation @T
A
=25°C
1.4
W
T
j
, T
stg
Operating Junction and Storage Temperature Range
-55 to +150
89
°C
°C/W
Thermal Resistance Junction to Ambient (PCB mounted)
b
R
QJA
a: Repetitive Rating: Pulse width limited by the maximum junction temperature.
b: 1-in
2
2oz Cu PCB board
DS-EV3404-EN-REV1.0
Page 1 of 5
Eternal Semiconductor Inc.
EV3404
Electrical Characteristics
(T
A
=25°C, unless otherwise noted)
Characteristic
Test Conditions
Symbol
Min. Typ. Max. Unit
•
Off Characteristics
V
GS
=0V, I
D
=-250uA
V
DS
=30V, V
GS
=0V
V
GS
=±20V, V
DS
=0V
BV
DSS
Drain-Source Breakdown Voltage
30
–
–
–
–
–
1
V
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
μA
nA
–
±100
•
On Characteristics
V
DS
=V
GS
, I
D
=-250uA
V
GS
=10V, I
D
=5A
V
GS
=4.5V, I
D
=4A
V
GS(th)
Gate Threshold Voltage
1
–
1.6
25
36
2
V
31
42
Drain-Source On-State
R
DS(on)
mΩ
Resistance
•
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
–
–
–
255
45
–
–
–
V
DS
=15V, V
GS
=0V, f=1MHz
Output Capacitance
PF
Reverse Transfer Capacitance
35
•
Switching Characteristics
Q
g
Q
gs
Q
gd
t
d(on)
t
r
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
–
–
–
–
–
–
–
5.2
0.9
1.4
5
–
–
–
–
–
–
–
V
DS
=15V, I
D
=5A, V
GS
=10V
nC
nS
V
3
V
DD
=15V, R
L
=3Ω, I
D
=1A,
VGEN=4.5V, RG=3Ω
t
d(off)
t
f
16
4
•
Drain-Source Diode Characteristics
Drain-Source Diode Forward
V
GS
=0V, I
S
=-1A
V
SD
–
–
-1
Note: Pulse Test: Pulse Width
≤
300us, Duty Cycle
≤
2%
DS-EV3404-EN-REV1.0
Page 2 of 5
Eternal Semiconductor Inc.
EV3404
Typical Characteristics Curves
(Ta=25°C, unless otherwise note)
DS-EV3404-EN-REV1.0
Page 3 of 5
Eternal Semiconductor Inc.
EV3404
DS-EV3404-EN-REV1.0
Page 4 of 5
Eternal Semiconductor Inc.
EV3404
SOT23-3L PACKAGE OUTLINE DIMENSIONS
DS-EV3404-EN-REV1.0
Page 5 of 5
