ETERNAL-EV3415
| Part # | ETERNAL-EV3415 |
Download  | ETERNAL-EV3415 |
Eternal Semiconductor Inc.
EV3415
P-Channel Enhancement-Mode MOSFET (-20V, -4.0A)
PRODUCT SUMMARY
V
DSS
I
D
R
DS(on)
(mΩ) Typ.
28 @ VGS = -4.5 V,ID=-4A
33 @ VGS = -2.5V,ID=-4A
38 @ VGS = -1.5V,ID=-2A
-20V
-4.0A
Features
• Super high dense cell trench design for low RDS(on)
• Rugged and reliable
• SOT-23-3L package
• ESD Rating:2000V HBM
• Lead
（
Pb
）
-free and halogen-free
EV3415 Pin Assignment & Symbol
3-Lead Plastic SOT-23-3L
Pin 1: Gate
Pin 2: Source
Pin3: Drain
Absolute Maximum Ratings
(T
A
=25°C, unless otherwise noted)
Parameter
Ratings
Symbol
Units
V
DS
V
GS
I
D
Drain-Source Voltage
Gate-Source Voltage
-20
V
V
±8
Drain Current (Continuous)
Drain Current (Pulsed)
a
-4
A
I
DM
P
D
I
S
-30
A
Total Power Dissipation @T
A
=25°C
Maximum Diode Forward Current
1.4
2
W
A
T
j
, T
stg
Operating Junction and Storage Temperature Range
-55 to +150
100
°C
°C/W
Thermal Resistance Junction to Ambient (PCB mounted)
b
R
QJA
a: Repetitive Rating: Pulse width limited by the maximum junction temperature.
b: 1-in
2
2oz Cu PCB board
DS-EV3415-EN-REV1.3
Page 1 of 5
Eternal Semiconductor Inc.
EV3415
Electrical Characteristics
(T
A
=25°C, unless otherwise noted)
Characteristic Test
Conditions
Symbol
Min. Typ. Max. Unit
•
Off Characteristics
V
GS
=0V, I
D
=-250uA
BV
DSS
Drain-Source Breakdown Voltage
-20
–
–
V
V
DS
=-20V, V
GS
=0V
V
GS
=±8V, V
DS
=0V
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
–
–
–
–
1
μA
μA
±10
•
On Characteristics
V
DS
=V
GS
, I
D
=-250uA
V
GS
=-4.5V, I
D
=-4A
V
GS
=-2.5V, I
D
=-4A
V
GS
=-1.8V, I
D
=-2A
V
GS(th)
Gate Threshold Voltage
-0.45 -0.55
-1
34
40
46
V
–
–
–
28
33
38
Drain-Source On-State
R
DS(on)
mΩ
Resistance
•
Dynamic Characteristics
C
iss
Input Capacitance
–
–
950
165
–
–
C
oss
Output Capacitance
V
DS
=-10V, V
GS
=0V, f=1MHz
V
DS
=-10V, I
D
=-1A, V
GS
=-4.5V
PF
C
rss
Reverse Transfer Capacitance
–
120
–
•
Switching Characteristics
Q
g
Q
gs
Q
gd
t
d(on)
t
r
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
–
–
–
–
–
–
–
12
10
19
12
10
19
25
–
–
–
–
–
–
–
nC
nS
V
DD
=-10V, R
L
=15Ω, I
D
=1A,
VGEN=-4.5V, RG=10Ω
t
d(off)
t
f
•
Drain-Source Diode Characteristics
Drain-Source Diode Forward
Voltage
V
GS
=0V, I
S
=-1A
V
SD
–
–
-1
V
Note: Pulse Test: Pulse Width
≤
300us, Duty Cycle
≤
2%
Switching Test Circuit and Swithcing Waveforms
DS-EV3415-EN-REV1.3
Page 2 of 5
Eternal Semiconductor Inc.
EV3415
Typical Characteristics Curves
(Ta=25°C, unless otherwise note)
DS-EV3415-EN-REV1.3
Page 3 of 5
Eternal Semiconductor Inc.
EV3415
SOT23-3L PACKAGE OUTLINE DIMENSIONS
DS-EV3415-EN-REV1.3
Page 5 of 5
