ETERNAL-GM4953
| Part # | ETERNAL-GM4953 |
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Eternal Semiconductor Inc.
GM4953
Dual P-Channel Enhancement-Mode MOSFET (-20V, -4.8A)
PRODUCT SUMMARY
V
DSS
I
D
R
DS(on)
(mΩ)TYP
85 @V
GS
= -2.5V,ID=-2.0A
75 @V
GS
= -4.5V,ID=-4.8A
-20V
-4.8A
Features
•
Advanced Trench Process Technology
•
High Density Cell Design for Ultra Low On-Resistance
•
Surface mount Package
•
Ordering information
：
GM4953
（
Lead
（
Pb
）
-free
GM4953-G
（
Lead
（
Pb
）
-free and halogen-free
）
TOP Marking
8
7
6
5
Pin1: Soure1
Pin2: Gate1
Pin3: Soure2
Pin4: Gate2
Pin5/6:Drain2
Pin7/8:Drain1
GM4953
part number
ID CODE
xxxxxx
1
2
3
4
SOP-8
Absolute Maximum Ratings
(T
A
=25°C, unless otherwise noted)
Parameter
Ratings
Symbol
Units
V
DS
V
GS
I
D
Drain-Source Voltage
Gate-Source Voltage
-20
V
V
±12
Drain Current (Continuous)
Drain Current (Pulsed)
a
-4.8
A
I
DM
P
D
I
S
-18
A
Total Power Dissipation @T
A
=25°C
Maximum Diode Forward Current
2
W
-2
-55 to +150
60
A
T
j
, T
stg
Operating Junction and Storage Temperature Range
°C
°C/W
Thermal Resistance Junction to Ambient (PCB mounted)
b
R
QJA
a: Repetitive Rating: Pulse width limited by the maximum junction temperature.
b: 1-in
2
2oz Cu PCB board
Electrical Characteristics
(T
A
=25°C, unless otherwise noted)
Characteristic
Test Conditions
Symbol
Min. Typ. Max. Unit
•
Off Characteristics
DS-GM4953-EN-REV1.0
Page 1 of 5
Eternal Semiconductor Inc.
GM4953
V
GS
=0V, I
D
=-250uA
BV
DSS
Drain-Source Breakdown Voltage
-20
–
–
V
V
DS
=-18V, V
GS
=0V
V
GS
=±10V, V
DS
=0V
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
–
–
–
–
-1
μA
±100
nA
•
On Characteristics
V
DS
=V
GS
, I
D
=-250uA
V
GS
=-4.5V, I
D
=-4.8A
V
GS
=-2.5V, I
D
=-2A
V
GS(th)
Gate Threshold Voltage
-0.4
-0.7
75
-1
85
V
–
–
Drain-Source On-State
R
DS(on)
mΩ
Resistance
85
100
•
Dynamic Characteristics
C
iss
Input Capacitance
–
–
589
91
–
–
C
oss
Output Capacitance
V
DS
=-6V, V
GS
=0V, f=1MHz
PF
C
rss
Reverse Transfer Capacitance
–
67
–
•
Switching Characteristics
Q
g
Q
gs
Q
gd
t
d(on)
t
r
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
–
–
–
–
–
–
–
6.55
0.31
1.3
–
–
–
–
–
–
–
V
DS
=-6V, I
D
=-2.8A, V
GS
=-4.5V
nC
nS
V
9.7
V
DD
=-6V, R
L
=5W, I
D
=-1A,
VGEN=-4.5V, RG=6W
3.5
t
d(off)
t
f
33.3
4.5
•
Drain-Source Diode Characteristics
Drain-Source Diode Forward
V
GS
=0V, I
S
=-2A
V
SD
–
–
-1.2
Note: Pulse Test: Pulse Width
≤
300us, Duty Cycle
≤
2%
-V
DD
-V
DS
90%
R
L
D
V
out
Vin
R
GEN
R
GS
10%
-V
GS
G
S
tr
Td(on) tr
Td(off)
Switching Test Circuit and Swithcing Waveforms
Typical Characteristics Curves
(Ta=25°C, unless otherwise note)
T
J
=25
°
C
–
V
GS
=4.5,3.5,2.5V
T
J
=125
°
C
DS-GM4953-EN-REV1.0
Page 2 of 5
Eternal Semiconductor Inc.
GM4953
–
V
GS
=1.5V
T
J
=-55
°
C
-V
DS
•Drain-to-Source Voltage(V)
–
V
GS
•Gate-to-Source Voltage(V)
Fig.1 Output Characteristic
Fig . 2 Transfer Characteristic
V
GS
=0V
I
D
= –
4.8A
V
GS
= -4.5V
V
SD
•Body Diode Forward
Voltage (V)
Fig . 4 Body Diode Forward
Voltage
Variation with Source Current
T
J
• Junction Temperature (°C
)
Fig. 3 On-Resistance Variation
with Temperature
V
DS
= V
GS
I
D
= 250uA
V
DS
= -10V
I
D
= -6A
Qg•Total Gate Charge
T
J
• Junction Temperature(°C)
Fig. 5 Gate Threshold Variation
with Temperature
Fig
. 6
Gate Charge
R
DS(on)
Limit
DC
T
A
•25°C
T
J
•150°C
Single Pulse
V
DS
• Drain-to-Source Voltage (V)
Fig. 7 Maximum Safe Operating Area
DS-GM4953-EN-REV1.0
Page 3 of 5
Eternal Semiconductor Inc.
GM4953
P
DM
t
f1
t
2
1.R
JA
(t)=r(t)*RJA
2.R
JA
=See Datasheet
3.TJM-T
A
=P*R
JC
(t)
4.Duty Cycle,D=t1/T2
Single Pulse
Square Wave Pulse Duration (sec)
Fig .8 Nonmalized Thermal Transient Impedance Curve
sop-8 PACKAGE OUTLINE DIMENSIONS
DS-G
Eternal Semiconductor Inc.
GM4953
Dimensions In Millimeters
(MM)
Dimensions In Inches
(MIL)
Symbol
Max
0.069
0.010
0.061
0.020
0.010
0.201
0.157
0.244
Min
1.350
0.100
1.350
0.330
0.170
4.700
3.800
5.800
Max
1.750
0.250
1.550
0.510
0.250
5.100
4.000
6.200
Min
0.053
0.004
0.053
0.013
0.007
0.185
0.150
0.228
A
A1
A2
b
c
D
E
E1
e
1.270
（
BSC)
0.050
（
BSC)
L
0.400
0°
1.270
8°
0.016
0°
0.050
8°
θ
DS-GM4953-EN-REV1.0
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