FETek-FKBB3004
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FKBB3004
FE
T
ek Technology Corp.
N-Ch 30V Fast Switching MOSFETs
100% EAS Guaranteed
Product Summary
Green Device Available
Super Low Gate Charge
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
BVDSS
RDSON
ID
9m
Ω
30V
46A
PRPAK3X3 Pin Configuration
Description
The FKBB3004 is the high cell density
trenched N-ch MOSFE
T
s, which provide
excellent RDSON and gate charge for most of
the synchronous buck converter applications.
The FKBB3004 meet the RoHS and Green
Product requirement, 100% EAS guaranteed
with full function reliability approved.
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
30
Units
V
Drain-Source Voltage
V
GS
Gate-Sou
r
ce Voltage
±
20
V
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
46
A
29
A
11
9
A
A
92
A
EAS
Single Pulse Avalanche Energy
3
57.8
mJ
A
I
AS
Avalanche Current
34
P
D
@T
C
=25
℃
P
D
@T
A
=25
℃
T
STG
Total Power Dissipation
4
29
W
W
℃
℃
Total Power Dissipation
4
1.67
Storage
T
e
mperature Range
-55 to 150
-55 to 150
T
J
Operating Junction Temperature Range
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
75
Unit
℃
/W
℃
/W
Thermal Resistance Junction-ambient
1
Thermal Resistance Junction-Case
1
R
θ
JC
—
4.32
Data and specifications subject to change without notice.
www.fetek.com.tw
Ver : A
1
FKBB3004
FE
T
ek Technology Corp.
N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
30
—
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
V
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△
BV
DSS
/
△
T
J
Reference to 25
℃
, I
D
=1mA
V
GS
=10V , I
D
=15A
0.027
—
—
V/
℃
9
R
DS(ON)
Static Drain-Source On-Resistance
2
m
V
GS
=4.5V , I
D
=10A
—
15
2.5
—
V
GS(th)
Gate Threshold Voltage
—
V
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
-5.8
—
mV/
℃
V
DS
=24V , V
GS
=0V , T
J
=25
℃
V
DS
=24V , V
GS
=0V , T
J
=55
℃
1
I
DSS
Drain-Source Leakage Current
uA
—
5
V
GS
=
±
20V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
±
100
—
nA
S
V
DS
=5V , I
D
=15A
9.8
1.7
12.8
3.3
6.5
4.5
10.8
25.5
9.6
1317
163
131
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
—
Q
g
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
—
V
DS
=20V , V
GS
=4.5V , I
D
=12A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
—
—
—
V
DD
=12V , V
GS
=10V , R
G
=3.3
—
I
D
=5A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
—
C
iss
C
oss
C
rss
Input Capacitance
—
V
DS
=15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
46
Unit
A
I
S
Continuous Source Current
1,6
Pulsed Source Current
2,6
Diode Forward Voltage
2
I
SM
V
SD
—
—
92
A
—
—
1
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=34A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Data and specifications subject to change without notice.
www.fetek.com.tw
Ver : A
2
FKBB3004
FE
T
ek Technology Corp.
N-Ch 30V Fast Switching MOSFETs
Typical Characteristics
12
11
9
12
10
8
I
D
=12A
V
GS
=10V
V
GS
=7V
V
GS
=5V
V
GS
=4.5V
V
GS
=3V
6
4
8
2
6
0
2
4
6
8
10
0
0.25
0.5
0.75
V
GS
(V)
V
DS
Drain-to-Source Voltage (V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. Gate-Source
10
8
12
V
DS
=20V
I
D
=12A
10
8
6
T
J
=150
℃
T
J
=25
℃
6
4
4
2
2
0
0
0
6
12
18
24
30
0
0.3
0.6
0.9
Q
G
, Total Gate Charge (nC)
V
SD
, Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics Of Reverse
Fig.4 Gate-Charge Characteristics
1.8
1.4
1.0
0.6
0.2
1.8
1.4
1
0.6
0.2
-50
0
50
100
150
-50
0
50
100
150
T
J
,Junction Temperature (
℃
)
T
J
, Junction Temperature (
℃
)
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
Data and specifications subject to change without notice.
www.fetek.com.tw
Ver : A
3
FKBB3004
FE
T
ek Technology Corp.
N-Ch 30V Fast Switching MOSFETs
10000
1000
100
100.00
10.00
1.00
10us
100us
F=1.0MHz
Ciss
1ms
10ms
100ms
DC
Coss
Crss
0.10
T =25
℃
C
Single Pulse
10
0.01
1
5
9
13
17
21
25
0.1
1
10
100
V
DS
, Drain to Source Voltage (V)
V
DS
(V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.01
0.05
0.02
0.01
P
DM
S
I
NGLE PULSE
T
ON
T
D = T
ON
/T
T
J
peak = T
C
+ P
DM
x R
θJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
1
2
BV
DSS
BV
DSS
-V
DD
EAS=
BV
DSS
L x I
AS
2
x
V
DS
90%
V
DD
I
AS
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
V
GS
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
Data and specifications subject to change without notice.
www.fetek.com.tw
Ver : A
4
