FETek-FKS4907
| Part # | FETek-FKS4907 |
Download  | FETek-FKS4907 |
FKS4907
FE
T
ek Technology Corp.
N-Ch and P-Ch Fast Switching MOSFETs
100% EAS Guaranteed
Product Summary
Green Device Available
Super Low Gate Charge
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
BVDSS
40V
RDSON
18m
Ω
ID
10A
-7.5A
-40V
40
mΩ
Description
SOP8 Pin Configuration
The FKS4907 is the high performance
complementary N-ch and P-ch MOSFE
T
s with
high cell density, which provide excellent
RDSON and gate charge for most of the
synchronous buck converter applications.
The FKS4907 meet the RoHS and Green
Product requirement 100% EAS guaranteed
with full function reliability approved.
Absolute Maximum Ratings
Rating
Symbol
Parameter
Units
N-Ch
40
P-Ch
-40
V
DS
Drain-Source Voltage
V
V
V
GS
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
DM
Gate-Sou
r
ce Voltage
±
20
±
20
-7.5
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
10
A
8
20
-5.7
A
-15
A
EAS
Single Pulse Avalanche Energy
3
31
36
mJ
A
I
AS
Avalanche Current
25
-27
P
D
@T
C
=25
℃
T
STG
Total Power Dissipation
4
3.1
3.1
W
℃
℃
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
Parameter
Typ.
Max.
Unit
R
θ
JA
Thermal Resistance Junction-Ambient
1
—
85
℃
/W
R
θ
JC
Thermal Resistance Junction-Case
1
—
40
℃
/W
Data and specifications subject to change without notice.
www.fetek.com.tw
Ver : A
1
FKS4907
FE
T
ek Technology Corp.
N-Ch and P-Ch Fast Switching MOSFETs
N-Channel Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
40
—
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
V
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△
BV
DSS
/
△
T
J
Reference to 25
℃
, I
D
=1mA
V
GS
=10V , I
D
=10A
0.032
—
—
V/
℃
18
25
2.5
—
R
DS(ON)
Static Drain-Source On-Resistance
2
m
V
GS
=4.5V , I
D
=6A
—
Gate Threshold Voltage
—
V
GS(th)
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
-4.8
—
mV/
℃
V
DS
=32V , V
GS
=0V , T
J
=25
℃
V
DS
=32V , V
GS
=0V , T
J
=55
℃
1
I
DSS
Drain-Source Leakage Current
uA
—
5
V
GS
=
±
20V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
±
100
—
nA
S
V
DS
=5V , I
D
=10A
10.6
2
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
—
Q
g
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
9.1
2.1
4.1
15.2
3.6
46.4
3.2
1013
107
76
—
V
DS
=20V , V
GS
=4.5V , I
D
=10A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
—
—
—
V
DD
=15V , V
GS
=10V , R
G
=3.3
—
I
D
=1A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
—
C
iss
C
oss
C
rss
Input Capacitance
—
V
DS
=15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
10
Unit
A
I
S
Continuous Source Current
1,5
Pulsed Source Current
2,5
Diode Forward Voltage
2
I
SM
V
SD
—
—
20
A
—
—
1
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=25A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Data and specifications subject to change without notice.
www.fetek.com.tw
Ver : A
2
FKS4907
FE
T
ek Technology Corp.
N-Ch and P-Ch Fast Switching MOSFETs
P-Channel Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
-40
—
—
—
-1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
V
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
△
BV
DSS
/
△
T
J
Reference to 25
℃
, I
D
=-1mA
V
GS
=-10V , I
D
=-6A
-0.012
—
—
V/
℃
40
70
-2.5
—
R
DS(ON)
Static Drain-Source On-Resistance
2
m
V
GS
=-4.5V , I
D
=-3A
—
V
GS(th)
Gate Threshold Voltage
—
V
V
GS
=V
DS
, I
D
=-250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
4.32
—
mV/
℃
V
DS
=-32V , V
GS
=0V , T
J
=25
℃
V
DS
=-32V , V
GS
=0V , T
J
=55
℃
1
I
DSS
Drain-Source Leakage Current
uA
—
5
V
GS
=
±
20V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
±
100
—
nA
S
V
DS
=-5V , I
D
=-6A
8.3
13
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
—
Q
g
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
9
—
V
DS
=-20V , V
GS
=-4.5V , I
D
=-6A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
2.54
3.1
19.2
12.8
48.6
4.6
1004
108
80
—
—
—
V
DD
=-15V , V
GS
=-10V , R
G
=3.3
,
—
I
D
=-1A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
—
C
iss
C
oss
C
rss
Input Capacitance
—
V
DS
=-15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=-1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
-7.5
-15
-1
Unit
A
I
S
Continuous Source Current
1,5
Pulsed Source Current
2,5
Diode Forward Voltage
2
I
SM
V
SD
—
—
A
—
—
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=-25V,V
GS
=-10V,L=0.1mH,I
AS
=-27A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Data and specifications subject to change without notice.
www.fetek.com.tw
Ver : A
3
FKS4907
FE
T
ek Technology Corp.
N-Ch and P-Ch Fast Switching MOSFETs
N-Channel Typical Characteristics
20
12
I
D
=10A
V
GS
=10V
GS
=7V
GS
=5V
GS
=4.5V
10
8
V
18
16
14
12
V
V
6
4
V
GS
=3V
2
0
2
4
6
8
10
0
0.25
0.5
0.75
1
V
DS
, Drain-to-Source Voltage (V)
V
GS
(V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. G-S Voltage
10
8
12
V
DS
=20V
I
D
=10A
8
4
0
6
T
J
=150
℃
T
J
=25
℃
4
2
0
0
5
10
15
20
25
0.00
0.25
0.50
0.75
1.00
Q
G
, Total Gate Charge (nC)
V
SD
, Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
1.8
1.8
1.4
1.0
0.6
0.2
1.4
1
0.6
0.2
-50
0
50
100
150
-50
0
50
100
150
T
J
,Junction Temperature (
℃
)
T
J
, Junction Temperature (
℃
)
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
Data and specifications subject to change without notice.
www.fetek.com.tw
Ver : A
4
FKS4907
FE
T
ek Technology Corp.
N-Ch and P-Ch Fast Switching MOSFETs
10000
1000
100
100
F=1.0MHz
Ciss
10us
10
1
100us
Coss
Crss
10ms
100ms
DC
0
T =25
℃
C
Single Pulse
10
0
1
5
9
13
17
21
25
0.1
1
10
100
V
DS
Drain to Source Voltage (V)
V
DS
(V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.3
0.1
0.1
0.05
P
DM
T
ON
T
0.02
D = T
ON
/T
T
J
peak = T
C
+ P
DM
x R
θJC
S
I
NGLE PULSE
0.01
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
1
2
BV
DSS
BV
DSS
-V
DD
EAS=
BV
DSS
L x I
AS
2
x
V
DS
90%
V
DD
I
AS
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
V
GS
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Wave
Data and specifications subject to change without notice.
www.fetek.com.tw
Ver : A
5
FKS4907
FE
T
ek Technology Corp.
N-Ch and P-Ch Fast Switching MOSFETs
P-Channel Typical Characteristics
60
12
I
D
= – 6
V
GS
=-10V
10
55
50
45
40
35
30
V
GS
=-7V
V
GS
=-5V
8
6
V
GS
=-4.5V
4
V
GS
=-3V
2
0
0
0.5
1
1.5
2
2
4
6
8
10
-V
DS
Drain-to-Source Voltage (V)
-V
GS
(V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance v.s Gate-Source
12
10
8
10
V
DS
=-20V
I
D
=-6A
8
6
4
2
0
6
T
J
=150
℃
T
J
=25
℃
4
2
0
0
6
12
18
0.2
0.4
0.6
0.8
1
-V
SD
, Source-to-Drain Voltage (V)
Q
G
, T
o t a l
G a t e
C h a
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
2 . 0
1 . 5
1 . 0
0 . 5
1.5
1
0.5
0
– 5 0
0
50
100
150
-50
0
50
100
150
T
J
,Junction Temperature (
℃
)
T
J
, J
u n c t i o n
T e m
p
℃
e
)
r
Fig.5 Normalized V
GS(th)
v.s T
J
Fig.6 Normalized R
DSON
v.s T
J
Data and specifications subject to change without notice.
www.fetek.com.tw
Ver : A
6
FKS4907
FE
T
ek Technology Corp.
N-Ch and P-Ch Fast Switching MOSFETs
10000
1000
100
100.00
F=1.0MHz
Ciss
10.00
1.00
0.10
0.01
100us
1ms
Coss
Crss
10ms
100ms
DC
Tc=25
o
C
Single Pulse
10
1
5
9
13
17
21
25
0.1
1
10
100
-V
DS
Drain to Source Voltage(V)
-V
DS
(V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.3
0.1
0.1
0.05
P
DM
T
ON
T
0.02
0.01
D = T
ON
/T
T
J
peak = T
C
+ P
DM
x R
θJC
S
I
NGLE PULSE
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Waveform
Data and specifications subject to change without notice.
www.fetek.com.tw
Ver : A
7
