FMS-Formosa-Microsemi-2SC1623

Part #FMS-Formosa-Microsemi-2SC1623
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FMS-Formosa-Microsemi-2SC1623
SOT-23 Plastic-Encapsulate Transistors  
Formosa MS  
2SC1623  
TRANSISTOR (NPN)  
FEATURES  
z
High DC current gain :h

FE

=200(Typ) V

CE

=6V,I

C

=1mA  
High voltage:V

CEO

=50V  
SOT-23  
z
MAXIMUM RATINGS (
T

a

=25 unless
 
otherwise noted)  
℃
1.
BASE  
Symbol  
V

CBO  

Parameter  
Value  
Unit  
2.
EMITTER  
3.
COLLECTOR  
60  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V

CEO  

V

EBO  

I

C  

50  
5
V
V
Collector Current -Continuous  
Collector Power Dissipation  
Junction
T
e
mperature  
100  
mA  
mW  
℃
P

C  

200  
T

J  

150  
T

stg  

Storage
T
e
mperature  
-55-150  
℃
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)  
Parameter  
Symbol
T
e
st
 
conditions  
Min  
60  
50  
5
Typ  
Max Unit  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V

(BR)CBO  

V

(BR)CEO  

V

(BR)EBO  

I

CBO  

V
V
V
I

C

=
100
μ
A,I

E

=0  
I

C

=
1
mA,I

B

=0  
I

E

=
100
μ
A,I

C

=0  
V

CB

=
60
V
,
I

E

=0  
μ
A  
μ
A  
0.1  
0.1  
600  
0.3  
1
Emitter cut-off current  
I

EBO  

V

EB

=
5
V
,
I

C

=0  
DC current gain  
h

FE  

200  
V

CE

=
6
V
,
I

C

=
1
mA  
I

C

=
100
mA,I

B

=
10
mA  
I

C

=
100
mA,I

B

=
10
mA  
V

CE

=
6
V
,
I

C

=
10
mA  
90  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transition frequency  
V

CE(sat)  

V

BE(sat)  

f

T  

V
V
MHz  
250  
CLASSIFICATION OF
 
h

FE  

L4  
L5  
135-270  
L5  
L6  
200-400  
L6  
L7  
300-600  
L7  
Rank  
90-180  
L4  
Range  
Marking  
TEL:886-2-22696661  
FAX:886-2-22696141  
Document ID  
DS-231172  
Issued Date  
2011/03/10  
Revised Date  
2011/07/21  
Revision  
B
Page.  
2
Page 1  

SOT-23 Plastic-Encapsulate Transistors  
Formosa MS  
2SC1623

Typical Characteristics  

Static Characteristic  
h

FE

——  
I

C  

4
3
2
1
0
1000  
COMMON  
EMITTER  
T

a

=25
℃
 
10uA  
9uA  
T

a

=100
℃  
8uA  
7uA  
T

a

=25
℃  
6uA  
5uA  
100  
4uA  
3uA  
2uA  
I

B

=1uA  
COMMON EMITTER  
V

CE

= 6V  
10  
0.1  
0
2
4
6
8
1
10  
100  
COLLECTOR CURRENT
 
I

C

(mA)  
COLLECTOR-EMITTER VOLTAGE
 
V

CE

(V)  
V

CEsat

——  
I

C  

V

BEsat

——  
I

C  

2000  
1000  
300  
100  
T

a

=25
℃  
T

a

=100
℃  
T

a

=100
℃  
T

a

=25
℃  
β
=10  
β
=10  
10  
0.1  
100  
0.1  
1
10  
100  
1
10  
100  
COLLECTOR CURREMT
 
I

C

(mA)  
COLLECTOR CURREMT
 
I

C

(mA)  
I

C

—— V

BE  

f

T

—— I

C  

100  
1000  
100  
10  
10  
1
COMMON EMITTER  
V

CE

=6V  
COMMON EMITTER  
V

CE

=6V  
T

a

=25
℃  
0.1  
0.0  
0.3  
0.6  
0.9  
1.2  
70  
1
10  
COLLECTOR CURRENT
 
I

C

(mA)  
BASE-EMMITER VOLTAGE
 
V

BE

(V)  
P

C

—— T

a  

C

ob

/C

ib

——  
V

CB

/V

EB  

250  
200  
150  
100  
50  
50  
10  
f=1MHz  
I

E

=0/I

C

=0  
T

a

=25
℃  
C

ib  

C

ob  

1
0
0.1  
0
25  
50  
75  
100  
125  
150  
20  
0.1  
1
10  
AMBIENT TEMPERATURE
 
T

a

(
℃
)  
REVERSE VOLTAGE  
V
(V)  
TEL:886-2-22696661  
FAX:886-2-22696141  
Document ID  
DS-231172  
Issued Date  
2011/03/10  
Revised Date  
2011/07/21  
Revision  
B
Page.  
2
Page 2