FMS-Formosa-Microsemi-MMBT4403
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SOT-23 Plastic-Encapsulate Transistors
Formosa MS
MMBT4403
TRANSISTOR (PNP)
FEATURES
Switching transistor
SOT-23
MARKING
：
2T
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
1.
BASE
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Value
Unit
2.
EMITTER
-40
V
3.
COLLECTOR
-40
V
-5
V
Collector Current -Continuous
Collector Power Dissipation
Junction
T
e
mperature
-0.6
0.3
A
P
C
W
℃
℃
T
j
150
T
stg
Storage
T
e
mperature
-55-150
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Symbol
Test conditions
M
in
-40
-40
-5
M
ax
Unit
V
V
(BR)CBO
I
C
=-100
μ
A , I
E
=0
V
(BR)CEO
I
C
= -1mA , I
B
=0
V
(BR)EBO
I
E
=-100
μ
A, I
C
=0
V
V
I
CBO
I
CEO
V
CB
=-35
V
,
I
E
=0
-0.1
-0.1
-0.1
300
-0.4
-0.95
μ
A
μ
A
μ
A
Collector cut-off current
V
CE
=-35
V
,
I
B
=0
Emitter cut-off current
I
EBO
V
EB
=-4
V
,
I
C
=0
h
FE
DC current gain
V
CE
=-2
V
,
I
C
= -150mA
I
C
=-150mA, I
B
=-15mA
100
200
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE(sat)
V
BE(sat)
V
V
I
C
=- 150mA, I
B
=-15mA
V
CE
= -10
V
,
I
C
= -20mA
f =
100MHz
Transition frequency
MHz
f
T
Detay time
Rise time
15
20
ns
ns
ns
ns
t
d
t
r
V
CC
=-30
V
,
V
EB
=-2
V
,
I
C
=-150mA.I
B1
=-15mA
Storage time
Fall time
225
30
t
s
t
f
V
CC
=-30
V
,
I
C
=-150mA.
I
B1
= I
B2
=-15mA
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-231172
Issued Date
2011/03/10
Revised Date
2011/07/21
Revision
Page.
3
B
Page 1
SOT-23 Plastic-Encapsulate Transistors
Formosa MS
Typical Characterisitics
MMBT4403
h
FE
—— I
C
Static Characteristic
-250
1000
COMMON
EMITTER
T
a
=25
℃
COMMON EMITTER
V
CE
=-2V
T
a
=100
℃
-200
-1mA
-0.9mA
-0.8mA
-0.7mA
-0.6mA
-0.5mA
-0.4mA
-150
-100
-50
-0
T
a
=25
℃
100
-0.3mA
-0.2mA
I
B
=-0.1mA
10
-600
-1
-10
-100
-0
-2
-4
-6
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
I
C
V
BEsat
——
V
CEsat
—— I
C
-1.2
-700
-300
β
=10
β
=10
T
a
=25
℃
-0.8
-0.4
-0.0
T
a
=100
℃
-100
-30
T
a
=100
℃
T
a
=25
℃
-10
-3
-3
-1
-10
-30
-100
-600
-1.2
-30
-1
-10
-30
-100
-600
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
I
C
—— V
BE
C
ob
/ C
ib
——
V
CB
/ V
EB
50
-600
-100
f=1MHz
COMMON EMITTER
V
CE
=-2V
I
E
=0/I
C
=0
T
a
=25
℃
C
ib
C
ob
10
T
a
=100
℃
-10
-1
T
a
=25
℃
1
1
-0.1
-0.0
-0.1
-1
-10
-30
-0.4
-0.8
REVERSE VOLTAGE
V
(V)
BASE-EMMITER VOLTAGE
V
BE
(V)
f
T
—— I
C
P
C
—— T
a
400
300
200
100
0
-600
V
CE
=-10V
T
a
=25
℃
-100
-10
-1
-3
-10
0
25
50
75
100
125
150
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
T
a
(
℃
)
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-231172
Issued Date
2011/03/10
Revised Date
2011/07/21
Revision
B
Page.
3
Page 2
SOT-23 Plastic-Encapsulate Transistors
Formosa MS
Typical Characterisitics
MMBT4403
SOT-23 Package Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min
Max
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
c
D
E
E1
e
e1
L
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.950 T
Y
P
0.550 REF
0.037 T
Y
P
0.022 REF
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
6°
SOT-23 Suggested Pad Layout
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-231172
Issued Date
2011/03/10
Revised Date
2011/07/21
Revision
B
Page.
3
Page 3
