Fortior-Tech-FMD5N50E5
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FMD5N50E5
Silicon N-Channel Power MOSFET
General Description
：
FMD5N50E5, the
silicon N-channel Enhanced VDMOSFETs,
is obtained by the self-aligned planar Technology which reduce
the conduction loss, improve switching performance and
enhance the avalanche energy. The transistor can be used in
various power switching circuit for system miniaturization and
higher efficiency. The package form is TO-252, which accords
with the RoHS standard.
V
DSS
I
D
500
5
V
A
Trr
85
ns
Ω
R
DS(ON)Typ
1.25
Features
：
Fast body diode eliminates the need for external
diode in ZVS applications.
Lower Gate charge results in simpler drive
requirements
Higher Gate voltage threshold offers improved noise
immunity
Applications
：
Motor Control applications
Uninterruptible Power Supplies
Zero Voltage Switching SMPS
Absolute
Symbol
V
DSS
(
Tc=25°C unless otherwise specified
Parameter
)
Rating
Units
500
V
A
Drain-to-Source
V
o
ltage
Continuous Drain Current
5
I
D
2.9
A
Continuous Drain Current T
= 100 °C
C
a1
I
DM
20
A
Pulsed Drain Current
V
±30
V
GS
Gate-to-Source
V
o
ltage
a2
E
AS
350
mJ
mJ
A
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
a1
E
AR
31
a1
I
AR
2.5
dv/dt
a3
5.0
V/ns
W
Peak Diode Recovery dv/dt
Power Dissipation
75
0.60
P
D
W/°C
°C
°C
Derating Factor above 25°C
Operating Junction and Storage Temperature
MaximumTemperature for Soldering
150
–
55 to 150
300
T
J
T
stg
T
L
Rev1.0
–
1
–
FMD5N50E5
Electrical Characteristics
(
Tc= 25°C
unless otherwise specified
)
OFF Characteristics
Rating
Min. Typ.
Un
its
Parameter
Test Conditions
V
GS
=0
V
,
I
D
=250µA
Symbol
Max.
—
V
DSS
500
—
Drain to Source Breakdown
Bvdss Temperature Coefficient
V
V/
°C
Δ
BV
DSS
/
Δ
T
J
ID=250uA,Reference25°C
—
0.55
—
V
DS
=500
V
,
V
GS
= 0
V
,
T
a
= 25°C
V
DS
=400
V
,
V
GS
= 0
V
,
T
a
= 125°C
—
—
—
—
—
—
—
—
1
µA
µA
nA
nA
I
DSS
Drain to Source Leakage
Current
10
V
GS
= 30V
V
GS
=-30V
I
GSS(F)
I
GSS(R)
100
-100
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
ON Characteristics
Rating
Parameter
Test Conditions
Symbol
Units
Min. Typ. Max.
V
GS
=10
V
,
I
D
=2.5A
R
DS(ON)
V
GS(TH)
—
1.25 1.5
Ω
Drain-to-Source On-Resistance
Gate Threshold
V
o
ltage
—
V
DS
= V
GS
, I
D
= 250µA
3.0
5.0
V
≤
≤
Pulse width tp
380µs,
δ
2%
Dynamic Characteristics
Rating
Symbol
Parameter
Test Conditions
Units
S
Min. Typ. Max.
—
V
DS
=15
V
,
I
D
=2.5A
g
fs
5.0
775
79
—
—
—
—
Forward Transconductance
Input Capacitance
C
iss
C
oss
C
rss
—
—
—
V
GS
=0 V V
DS
= 25V
f = 1.0MHz
pF
Output Capacitance
9.5
Reverse Transfer Capacitance
Resistive Switching Characteristics
Rating
Symbol
Parameter
Test Conditions
Units
ns
Min. Typ. Max.
t
d(ON)
tr
t
d(OFF)
t
f
—
—
—
—
—
—
—
12
46
50
48
19
4.0
8.0
—
—
—
—
Turn-on Delay Time
Rise Time
ID =5A
VDD = 250V
RG =25
Ω
Turn-Off Delay Time
Fall Time
Q
g
Total Gate Charge
Gate to Source Charge
Gate to Drain (
“Miller”)Cha
rge
ID = 5A
VDD =250V
VGS = 10V
Q
gs
Q
gd
nC
Rev1.0
–
2
–
FMD5N50E5
Source-Drain Diode Characteristics
Rating
Min. Typ.
Max.
Parameter
Test Conditions
Symbol
Units
I
S
—
—
—
—
—
—
—
5
20
1.5
—
A
A
Continuous Source Current (Body
Maximum Pulsed Current (Body
Diode Forward
V
o
ltage
I
SM
V
SD
trr
I
S
=5.0A,V
GS
=0V
I
S
=5.0A,T
j
= 25°C
—
V
85
265
ns
nC
Reverse Recovery Time
dI
F
/dt=100A/us,
V
GS
=0V
Qrr
—
Reverse Recovery Charge
≤
≤
Pulse width tp
380µs,
δ
2%
Parameter
Typ.
Symbol
Units
R
θ
JC
R
θ
JA
1.67
62.5
℃
/W
℃
/W
Junction-to-Case
Junction-to-Ambient
a1
Repetitive rating; pulse width limited by maximum junction temperature
a2
L=10mH, I
D
=8A, Start T =25
℃
I
SD
=5A,di/dt 100A/us,
V
J
BV Start
T =25
≤
℃
DS
,
J
a3
≤
DD
Rev1.0
–
3
–
FMD5N50E5
Characteristics Curve
1
0
0
80
70
60
50
40
30
20
10
0
1 0
1
1ms
10ms
OPER
A
T
ION IN THI
S
A
REA
M
A
Y
B
E LIMITED B
Y
R
DS(ON)
T
J
=MAX R
A
T
ED
100
m
s
DC
0 .1
T
C
=25°C Single
Pulse
0 .0 1
1
1 0
1
0
0 0
1
0
0
0
25
50
75
100
125
150
V d s
, D
r
ain -to-S ou rce
V oltage
, V
olts
T
C
,
C
as
e
T
emperatur
e
,
°C
Figure
1
Maximun Forward Bias Safe Operating Area
Figure
6
2
Maximun Power Dissipation vs Case Temperature
6
5
4
3
2
1
0
PULSE DUR
A
T
ION=10
µ
s
DUT
Y
F
ACTOR=0.5%MAX
Tc
=
25°C
V
GS
=15V
4.5
3
V
GS
=7V
V
GS
=6V
V
GS
=6.5V
V
GS
=5.5V
V
GS
=4.5V
1.5
0
0
0
25
75
100
125
150
50
5
10
15
20
25
TC , Case Temperature ,
°C
Vds , Drain-to-Source Voltage , Volts
Figure
1
3
Maximum Continuous Drain Current vs Case Temperature
Figure
4
Typical Output Characteristics
50%
20%
10%
0.1
0.01
5%
P
DM
t1
2%
t2
1%
Single pulse
NOTES
DUT
Y
F
ACTOR D=t1/
t2
PEAK Tj=P
DM
*Z
thJC
*R
thJC
+T
C
0.001
0.00001
0.0001
Figure
0.001
0.01
0.1
1
Rectangular Pulse Duration,Seconds
5
Maximum Effective Thermal Impendance , Junction to Case
Rev1.0
–
4
–
FD5N50E5
100
FOR TEMPER
A
T
URES
ABOVE 25°C DER
A
T
E
PEAK CURRENT
AS
FOLLOWS:
TRANSCONDUCTANCE M
A
Y LIMIT
CURRENT IN THIS REGION
150
T
C
I
I
25
125
10
1
1.00E-05
1.00E-04
1.00E-03
Figure
1.00E-02
,
Pulse
Width ,
Seconds
1.00E-01
1.00E+00
1.00E+01
t
6
Maximun Peak Current Capability
6
9
PULSE DUR
A
T
ION
= 10
µ
s
DUTY FACTOR
= 0.5%MAX
Tc =25°C
PULSE DUR
A
T
ION
= 10
µ
s
DUTY CYCLE
= 0.5%MAX
V
DS
=30V
5
7.5
6
4.5
3
4
3
2
I
D
= 5A
I
D
= 2.5A
I
D
= 1.25A
-55°C
+25
°C
+150
°C
1
0
1.5
0
2
3
4
5
6
4
6
8
10
12
14
Vgs , Gate to Source Voltage , Volts
Vgs , Gate to Source Voltage
,
Volts
Figure
8
Typical Drain to Source ON Resistance vs Gate
V
o
ltage
and Drain Current
Figure
7 Typical
Transfer Characteristics
3
2.5
2
2.5
2.25
2
PULSE DUR
A
T
ION
= 10
µ
s
DUTY CYCLE=
0.5%MAX
Tc =25°C
PULSE DUR
A
T
ION
= 10
µ
s
DUTY CYCLE=
0.5%MAX
VGS=10V ID=2.5A
1.75
1.5
1.25
1
V
GS
=20V
1.5
1
0.75
0.5
-50
0
50
100
150
0
1
2
3
4
Tj, Junction temperature , C
Id , Drain Current , Amps
Typical Drain to Source ON Resistance
Figure 10 Typical
Drian to Source on Resistance
vs Junction Temperature
Figure
9
vs Drain Current
Rev1.0
–
5
–
FMD5N50E5
1.15
1.1
1.1
1.05
1
1.05
1
0.95
0.9
0.85
0.8
0.95
0.9
VGS=0V
0.75
0.7
VGS=0V
ID=250
µ
A
ID=250
µ
A
0.65
-75 -50
-25
0
25 50 75
100 125 150 175
-55 -30
-5
20
45
70
95 120 145
170
Tj, Junction temperature ,
°C
°C
Tj, Junction temperature ,
Figure 12
Typical Breakdown
V
o
ltage vs Junction Temperature
Figure 11
Typical Theshold
V
o
ltage vs Junction Temperature
10000
12
VDS=150V
VDS=250V
10
VDS=400V
1000
100
10
Ciss
8
6
4
Coss
Crss
V
GS
=0V , f=1MHz
Ciss=Cgs+Cgd
Coss=Cds+Cgd
Crss=Cgd
2
I
D
=5.0A
1
0
0.1
1
10
100
0
2
4
6
8
10 12 14
16 18 20
Vds , Drain – Source Voltage , Volts
Qg , Total Gate Charge , nC
Figure 13 Typical
Capacitance vs Drain to Source
V
o
ltage
Figure 14 Typical
Gate Charge vs Gate to Source
V
o
ltage
8
7
6
5
4
3
2
1
0
100
10
1
STARTING Tj = 25°C
STARTING Tj = 150°C
+150°C
+25°C
-55°C
If R=0: t
A
V
=(L* I
AS
) / (1.38V
DSS
-V
DD
)
If R
≠
0: t
A
V
=(L/R) In[IAS*R/ (1.38V
DSS
-V
DD
)+1]
R equals total Series resistance of Drain circuit
0.1
1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01
tav,Time in Avalanche,Seconds
1.00E+00
0
0.2
0.4
0.6
0.8
1
1.2
Vsd , Source – Drain Voltage , Volts
Figure 16 Unclamped
Inductive Switching Capability
Figure 15 Typical
Body Diode Transfer Characteristics
Rev1.0
–
6
–
FMD5N50E5
TestCircuitandWaveform
Rev1.0
–
7
–
FD5N50E5
Rev1.0
–
8
–
FD5N50E5
Package Information
V
alue
s(
mm
)
Items
MIN
6.30
MAX
6.80
A
B
5.20
2.10
0.40
0.60
0.70
0.40
0.80
9.70
2.70
0.60
5.10
2.09
6.20
2.50
0.60
0.80
0.90
0.60
1.00
10.20
3.10
0.90
5.50
2.49
C
D
E1
E2
F
G
L1
L2
H
M
N
R
0.3
T
1.40
5.10
1.60
6.30
Y
TO-252
Package
Rev1.0
–
9
–
FMD5N50E5
The name and content of poisonous and harmful material in products
Hazardous
Substance
Part
’
s Name
Pb
Hg
Cd
Cr(VI)
PBB
PBDE
≤
0.1%
≤
0.1%
≤
0.01%
≤
0.1%
≤
0.1%
≤
0.1%
Limit
Lead Frame
Molding Compound
Chip
Wire Bonding
Solder
means the hazardous material is under the criterion of SJ/T11363-2006.
means the hazardous material exceeds the criterion of SJ/T11363-2006.
X
Note
The plumbum element of solder exist in products presently, but within the allowed
range of Eurogroup
’
s RoHS.
Warnings
1.
Exceeding the maximun ratings of the device in performance may cause damage to the device, even the
permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80
percent of the maximun ratings of the device.
2.
When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink.
3.
VDMOSFETs is the device which is sensitive to the static electricit
y
,
i
t is necessory to protect the device
from being damaged by the static electricity when using it.
4.
This publication is made by Fortior technology and subject to regular change without notice.
Rev1.0
–
10
–
