FOSAN-FS4485

安徽富信半导体科技有限公司  

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO. , LTD.  

FS4485  

SOP-8 P

 

Channel Enhancement

沟道增强型  

MOS Field Effect Transistor

场效应管  

▉

Features

特点  

Low on-resistance

 

低导通电阻  

R

DS(ON)

=13mΩ(Type)@V

GS

= -10V  

R

DS(ON)

=18mΩ(Type)@V

GS

= -4.5V  

▉

Applications

应用  

Load Switch

 

负载开关  

DC/DC Power System

电源升压系统  

Power Management in LCD TV Inverter

液晶电视电源管理  

▉

Internal Schematic Diagram

内部结构  

▉

Absolute Maximum Ratings

最大额定值  

Characteristic

特性参数  

Symbol

符号  

Rat

额定值

Unit

单位  

Drain-Source

V

o

ltage

漏极

–

源极电压  

Gate- Source

V

o

ltage

栅极

–

源极电压  

BV

DSS  

V

GS  

-40  

V

V

+25  

I

D

（

at T

A

= 25°C

）  

I

DM  

Drain Current (continuous)

漏极电流

–

连续  

Drain Current (pulsed)

漏极电流

–

脉冲  

Total Device Dissipation

总耗散功率  

Thermal Resistance Junction-Ambient

热阻  

-11  

-44  

3.1  

41  

A

A

P

TOT

(at

T

A

= 25°C)  

W

R

℃

/W  

Junction/Storage Temperature

结温/储存温度  

T

J

,

T

stg  

-55~150  

℃

安徽富信半导体科技有限公司  

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO. , LTD.  

FS4485  

▉

Electrical Characteristics

电特性  

(T

A

=25

℃

unless otherwise noted

如无特殊说明，温度为

25

℃

)  

Characteristic  

特性参数  

Symbol  

符号  

Min  

Typ  

最小值 典型值 最大值  

Max  

Unit  

单位  

Drain-Source Breakdown

V

o

ltage  

漏极

–

源极击穿电压

(I

D

= -250uA,V

 

=0V)  

Gate Threshold

V

o

ltage  

BV

DSS  

V

GS

(th)  

I

DSS  

-40  

-1.4  

—

—

-1.9  

—

—

-2.4  

-1  

V

GS  

V

栅极开启电压

(I

D

= -250uA,V

 

= V

 

)  

GS  

DS  

Zero Gate

V

o

ltage Drain Current  

u

A  

n

A  

零栅压漏极电流

(V =0

V

,

 

V =

 

–

32V)  

GS  

DS  

Gate Body Leakage  

栅极漏电流

(V =+25

V

,

 

V

=

0V)  

I

GSS  

—

—

+100  

GS  

DS  

Static Drain-Source On-State Resistance  

静态漏源导通电阻

(I

D

= -11A,V

 

= -10V)  

R

DS(ON)  

—

13  

18  

16  

22  

m

Ω  

GS  

(I

D

= -7A,V

 

= -4.5V)  

GS  

Diode Forward

V

o

ltage Drop  

内附二极管正向压降

(I

SD

= -1A,V

 

=0V)  

-0.75  

1500  

235  

-1  

—

—

—

V

SD  

C

ISS  

C

OSS  

C

RSS  

—

—

—

—

V

GS  

Input Capacitance

输入电容  

pF  

pF  

pF  

(V =0

V

,

 

V =

 

–

20

V

,

f=1MHz)  

GS  

DS  

Common Source Output Capacitance  

共源输出电容

(V

GS

=0

V

,

V

DS

= -20

V

,

f=1MHz)  

Reverse Transfer Capacitance

反馈电容  

(V

GS

=0

V

,

V

DS

= -20

V

,

f=1MHz)  

180  

Total Gate Charge

栅极电荷密度  

Q

—

—

—

—

—

—

32  

5

—

—

—

—

—

—

nC  

nC  

nC  

ns  

g

(V =

 

-20

V

, I

 

=

–

11A, V

 

= -10V)  

DS  

D

GS  

Gate Source Charge

栅源电荷密度  

(V =

 

-20

V

, I

 

=

–

11A, V

 

= -10V)  

Q

gs  

DS  

D

GS  

Gate Drain Charge

栅漏电荷密度  

(V =

 

-20

V

, I

 

=

–

11A, V

 

= -10V)  

Q

gd  

8

DS  

D

GS  

Turn-ON Delay Time

开启延迟时间  

(V

DS

= -20V I

D

= -1A, R

GEN

=3.3

Ω

,V

GS

= -10V)  

t

d(on)  

t

r  

t

d(off)  

t

f  

14  

12  

41  

Turn-ON Rise Time

开启上升时间  

(V

DS

= -20V I

D

= -1A, R

GEN

=3.3

Ω

,V

GS

= -10V)  

ns  

Turn-OFF Delay Time

关断延迟时间  

(V

DS

= -20V I

D

= -1A, R

GEN

=3.3

Ω

,V

GS

= -10V)  

ns  

Turn-OFF Fall Time

关断下降时间  

(V

DS

= -20V I

D

= -1A, R

GEN

=3.3

Ω

,V

GS

= -10V)  

—

22  

—

ns  

安徽富信半导体科技有限公司  

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO. , LTD.  

FS4485  

■

Typical Characteristic Curve

典型特性曲线  

Figure 1: Output Characteristics  

Figure 2: On-Resistance vs. V

GS  

Figure 4: On-Resistance vs. Drain Current  

Figure 6: Gate-Charge Characteristics  

Figure 3: On-Resistance vs. T

J  

Figure 5: Capacitance Characteristics  

安徽富信半导体科技有限公司  

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO. , LTD.  

FS4485  

■

Typical Characteristic Curve

典型特性曲线  

Figure 7: Power Rating Curve  

Figure 8: Diode Characteristics  

Figure 9: Safe Operating Area  

Figure 10: Gate Threshold

V

o

ltage  

Figure 11: Transient Thermal Response Curve  

安徽富信半导体科技有限公司  

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.

 

, LTD.  

FS4485  

▉

Dimension

外形封裝尺寸